2SH12 [HITACHI]
Silicon N-Channel IGBT; 硅N沟道IGBT![2SH12](http://pdffile.icpdf.com/pdf1/p00031/img/icpdf/2SH12_159915_icpdf.jpg)
型号: | 2SH12 |
厂家: | ![]() |
描述: | Silicon N-Channel IGBT |
文件: | 总8页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ADE–208–275 (Z)
2SH12
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
TO–220AB
High speed power switching
Features
2
• High speed switching
• Low on saturation voltage
1
1. Gate
2. Collector
3. Emitter
1
2
3
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
V
600
V
CES
———————————————————————————————————————————
Gate to emitter voltage
V
±20
V
GES
———————————————————————————————————————————
Collector current
I
15
A
C
———————————————————————————————————————————
Collector peak current
ic(peak)
30
A
———————————————————————————————————————————
Collector dissipation
P *
60
W
C
———————————————————————————————————————————
Channel temperature
T
150
°C
j
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
2SH12
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to emitter breakdown
V
600
—
—
V
I
= 100 µA, V
= 0
(BR)CES
C
GE
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
—
—
0.5
mA
V
= 600 V, V
= 0
CES
CE
GE
current
———————————————————————————————————————————
Gate to emitter leak current
I
—
—
±1
µA
V
= ±20 V, V
= 0
GES
GE
CE
———————————————————————————————————————————
Gate to emitter cutoff current
———————————————————————————————————————————
V
3.0
—
5.0
V
I
= 1 mA, V
= 10 V
GE(off)
C
CE
Collector to emitter saturation
V
1
—
2.0
—
V
I
= 7.5 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
2
—
2.6
3.3
V
I
= 15 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Input capacitance
Cies
—
1400
—
pF
V
= 10 V, V
= 0,
CE
GE
f = 1 MHz
———————————————————————————————————————————
Switching time
t
—
120
—
ns
I = 15 A,
r
C
————————————————
t
—
200
—
R = 20 Ω,
L
on
————————————————
t
—
300
600
V
= ±15 V
f
GE
————————————————
t
—
500
1000
Rg = 50 Ω
off
———————————————————————————————————————————
2
2SH12
Power vs. Temperature Derating
Maximum Safe Operation Area
100
80
60
40
20
100
10
PW = 10 ms(1 sh
1
0.1
Ta = 25 °C
0.01
0
50
100
150
200
1
10
100
1000
(V)
Collector to Emitter Voltage V
Case Temperature Tc (°C)
CE
Reverse Bias SOA
Typical Output Characteristics
Pulse Test
100
50
40
Ta = 25 °C
10
1
V
= 15 V
12 V
GE
30
20
10 V
8 V
0.1
10
0
Tc = 25 °C
6 V
8 10
0.01
0
200
400
600
V
800
(V)
2
4
6
Collector to Emitter Voltage
CE
Collector to Emitter Voltage V
(V)
CE
3
2SH12
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
50
40
30
20
10
10
8
10 A
5 A
I
= 15 A
C
6
25 °C
Tc = –25 °C
75 °C
4
2
Pulse Test
4
Pulse Test
V
= 10 V
CE
0
8
12
16
20
0
4
8
12
16 20
Gate to Emitter Voltage
V
(V)
GE
Gate to Emitter Voltage
V
(V)
GE
Collector to Emitter Saturation Voltage
vs. Collector Current
Typical Capacitance vs.
Collector to Emitter Voltage
50
10000
1000
100
Pulse Test
V
GE
= 15 V
20
10
5
Cies
Tc =75 °C
25 °C
–25 °C
Coes
Cres
2
1
V
= 0
GE
f = 1 MHz
0.5
10
1
2
5
10
20
50 100
(A)
0
10
20
30
40
V
CE
50
(V)
Collector to Emitter Voltage
Collector Current
I
C
4
2SH12
Dynamic Input Characteristics
Switching Characteristics
20
16
12
8
500
400
300
200
100
1000
500
V
CC
= 400 V
300 V
200 V
tf
200
100
V
td(off)
GE
td(on)
50
V
CC
= 400 V
300 V
tr
V
V
= 300 V
= ±15 V
CC
GE
4
0
200 V
I
= 15 A
80
C
20
10
Ω
Rg = 50
Tc = 25 °C
V
CE
0.5
1
2
5
10 20 50
0
20
40
60
100
Collector Current
I
(A)
C
Gate Charge Qg (nc)
Switching Characteristics
= 15 A
Switching Characteristics
tf
5000
2000
1000
500
I
C
L
Ω
R =20 (V
= 300 V)
CC
V
= ±15 V
GE
Tc = 25 °C
td(off)
td(off)
200
100
50
1000
500
tr
td(on)
tf
200
100
I
= 15 A
C
L
Ω
R = 20
V
tr
20
10
= ±15 V
GE
td(on)
Rg = 50 Ω
25
Case Temperature Tc (°C)
50
10 20
50 100
500 1000
200
–25
0
50
75
100 125
Gate Resistance Rg ( )
Ω
5
2SH12
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
0.2
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 2.08 °C/W, Tc = 25 °C
PW
T
P
CM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
90%
10%
0
Vin
Ic Monitor
V
CE
Vin Monitor
V
CE
Monitor
R
L
Rg
90%
90%
D.U.T.
V
CC
Vin ± 15 V
10%
Ic
td(on)
10%
tf
td(off)
tr
ton
toff
6
2SH12
Package Dimensions
Unit : mm
• TO–220AB
11.5 max
9.8 max
7.6 min
+ 0.1
– 0.08
4.8 max
f
3.6
1.5 max
1.5 max
0.5
0.76 ±0.1
2.7 max
2.5 ±0.5
5.1 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
7
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