2SH22 [HITACHI]
Silicon N-Channel IGBT; 硅N沟道IGBT
| 型号： | 2SH22 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel IGBT |
| 文件： | 总8页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADE–208–295 (Z)
2SH22
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
TO–3PL
High speed power switching
Features
2
• High speed switching
• Low on saturation voltage
1
1. Gate
2. Collector
3. Emitter
3
1
2
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
V
600
V
CES
———————————————————————————————————————————
Gate to emitter voltage
V
±20
V
GES
———————————————————————————————————————————
Collector current
I
75
A
C
———————————————————————————————————————————
Collector peak current
ic(peak)
150
A
———————————————————————————————————————————
Collector dissipation
P *
200
W
C
———————————————————————————————————————————
Channel temperature
T
150
°C
j
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
2SH22
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to emitter breakdown
V
600
—
—
V
I
= 100 µA, V
= 0
(BR)CES
C
GE
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
—
—
0.5
mA
V
= 600 V, V
= 0
CES
CE
GE
current
———————————————————————————————————————————
Gate to emitter leak current
I
—
—
±1
µA
V
= ±20 V, V
= 0
GES
GE
CE
———————————————————————————————————————————
Gate to emitter cutoff current
———————————————————————————————————————————
V
3.0
—
6.0
V
I
= 1 mA, V
= 10 V
GE(off)
C
CE
Collector to emitter saturation
V
1
—
1.5
—
V
I
= 35 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
2
—
2.0
2.6**
V
I
= 75 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Input capacitance
Cies
—
6200
—
pF
V
= 10 V, V
= 0,
CE
GE
f = 1 MHz
———————————————————————————————————————————
Switching time
t
—
700
—
ns
I = 75 A,
r
C
————————————————
t
—
900
—
R = 4 Ω,
L
on
————————————————
t
—
2000
—
V
= ±15 V
f
GE
————————————————
t
—
2800
—
Rg = 50 Ω
off
———————————————————————————————————————————
**V
2 is specified at the correlated test condition (I =50A)
CE(sat)
C
2
2SH22
Power vs. Temperature Derating
Maximum Safe Operation Area
300
200
100
100
10
1
0.1
Ta = 25 °C
0.01
0
50
100
150
200
1
10
100
1000
(V)
Collector to Emitter Voltage V
Case Temperature Tc (°C)
CE
Typical Output Characteristics
Pulse Test
Reverse Bias SOA
200
160
100
Ta = 25 °C
12 V
= 15 V
V
GE
10
1
120
80
10 V
8 V
40
0
Tc = 25 °C
6 V
8 10
0.1
0
200
400
600
800
(V)
2
4
6
Collector to Emitter Voltage V
Collector to Emitter Voltage V
(V)
CE
CE
3
2SH22
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
200
160
120
80
10
8
I
= 75 A
C
50 A
25 A
25 °C
Tc = –25 °C
75 °C
6
4
40
2
Pulse Test
V
= 10 V
CE
Pulse Test
4
0
4
8
12
16 20
0
8
12
16
20
Gate to Emitter Voltage
V
(V)
GE
Gate to Emitter Voltage
V
(V)
GE
Collector to Emitter Saturation Voltage
vs. Collector Current
Typical Capacitance vs.
Collectot to Emitter Voltage
50
Pulse Test
10000
1000
100
Cies
V
GE
= 15 V
20
10
5
Tc =75 °C
25 °C
Coes
Cres
2
1
–25 °C
V
= 0
GE
f = 1 MHz
0.5
2
5
10
20
50 100 200
(A)
0
10
20
30
40
50
(V)
Collector to Emitter Voltage
V
Collector Current
I
CE
C
4
2SH22
Dynamic Input Characteristics
Switching Characteristics
tf
20
16
12
8
500
400
300
200
100
2000
1000
500
V
CC
= 400 V
300 V
200 V
td(off)
V
GE
200
100
td(on)
tr
V
CC
= 400 V
300 V
200 V
V
V
= 300 V
= ±15 V
Rg = 50
Tc = 25 °C
CC
GE
4
0
50
I
= 75 A
C
Ω
V
CE
20
0
80
160
240
320
400
1
5
10
50 100
(A)
2
20
I
Gate Charge Qg (nc)
Collector Current
C
Switching Characteristics
tf
Switching Characteristics
tf
5000
5000
2000
2000
1000
500
1000
500
td(off)
tr
tr
td(off)
td(on)
200
100
50
200
I = 75 A
C
I
= 75 A
C
L
Ω
R = 4
Ω
R = 4
V
L
GE
100
50
V
= ±15 V
= ±15 V
GE
td(on)
Rg = 50 Ω
75 100 125
Case Temperature Tc (°C)
Tc = 25 °C
50 100
Gate Resistance Rg ( )
5
10
500
–25
0
25
50
Ω
5
2SH22
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
0.2
0.1
θ
θ
γ
θ
j – c(t) = s (t) • j – c
j – c = 0.625 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
90%
10%
0
Vin
Ic Monitor
V
CE
Vin Monitor
V
CE
Monitor
R
L
Rg
90%
90%
D.U.T.
V
CC
Vin ± 15 V
10%
Ic
td(on)
10%
tf
td(off)
tr
ton
toff
6
2SH22
Package Dimensions
Unit : mm
• TO–3PL
20.0 ± 0.3
5.0 ± 0.2
3.3 ± 0.2
1.6
1.4
2.2
3.0
+0.25
1.6–0.1
3
2
1
+0.25
0.6–0.1
5.45 ± 0.5
5.45 ± 0.5
2.8 ± 0.2
1.0
TO–3PL
Hitachi Code
EIAJ
3.8
7.4
—
—
JEDEC
7
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