2SH11 [HITACHI]
Silicon N-Channel IGBT; 硅N沟道IGBT![2SH11](http://pdffile.icpdf.com/pdf1/p00031/img/icpdf/2SH11_159914_icpdf.jpg)
型号: | 2SH11 |
厂家: | ![]() |
描述: | Silicon N-Channel IGBT |
文件: | 总8页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ADE–208–274 (Z)
2SH11
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
TO–220AB
High speed power switching
Features
2
• High speed switching
• Low on saturation voltage
1
1. Gate
2. Collector
3. Emitter
1
2
3
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
V
600
V
CES
———————————————————————————————————————————
Gate to emitter voltage
V
±20
V
GES
———————————————————————————————————————————
Collector current
I
10
A
C
———————————————————————————————————————————
Collector peak current
ic(peak)
20
A
———————————————————————————————————————————
Collector dissipation
P *
50
W
C
———————————————————————————————————————————
Channel temperature
T
150
°C
j
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
2SH11
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to emitter breakdown
V
600
—
—
V
I
= 100 µA, V
= 0
(BR)CES
C
GE
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
—
—
0.5
mA
V
= 600 V, V
= 0
CES
CE
GE
current
———————————————————————————————————————————
Gate to emitter leak current
I
—
—
±1
µA
V
= ±20 V, V
= 0
GES
GE
CE
———————————————————————————————————————————
Gate to emitter cutoff current
———————————————————————————————————————————
V
3.0
—
5.0
V
I
= 1 mA, V
= 10 V
GE(off)
C
CE
Collector to emitter saturation
V
1
—
2.0
—
V
I
= 5 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
2
—
2.6
3.3
V
I
= 10 A, V
= 15 V
CE(sat)
C
GE
voltage
———————————————————————————————————————————
Input capacitance
Cies
—
1000
—
pF
V
= 10 V, V
= 0,
CE
GE
f = 1 MHz
———————————————————————————————————————————
Switching time
t
—
75
—
ns
I
= 10 A,
r
C
————————————————
t
—
150
—
R = 30 Ω,
L
on
————————————————
t
—
300
600
V
= ±15 V
f
GE
————————————————
t
—
450
900
Rg = 50 Ω
off
———————————————————————————————————————————
2
2SH11
Maximum Safe Operation Area
Power vs. Temperature Derating
100
10
1
80
60
40
20
PW = 10 ms(1 shot)
0.1
Ta = 25 °C
0.01
0
50
100
150
200
1
10
100
1000
(V)
Case Temperature Tc (°C)
Collector to Emitter Voltage V
CE
Typical Output Characteristics
= 15 V
Reverse Bias SOA
20
16
100
V
12 V
GE
Pulse Test
Ta = 25 °C
10
1
10 V
12
8
8 V
6 V
0.1
4
0
Tc = 25 °C
0.01
2
4
6
8
10
(V)
0
200
400
600
V
800
(V)
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
CE
3
2SH11
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
25 °C
20
16
12
8
10
8
Tc = –25 °C
75 °C
I
= 10 A
C
5 A
3 A
6
4
4
2
Pulse Test
Pulse Test
4
V
= 10 V
CE
0
4
8
12
16
20
0
8
12
16
(V)
GE
20
Gate to Emitter Voltage
V
(V)
GE
Gate to Emitter Voltage
V
Collector to Emitter Saturation Voltage
vs. Collector Current
Typical Capacitance vs.
Collector to Emitter Voltage
50
10000
1000
100
V
= 0
Pulse Test
GE
f = 1 MHz
V
GE
= 15 V
20
10
5
Cies
Tc =75 °C
25 °C
2
1
Coes
Cres
–25 °C
10
0.5
2
5
10
20
1
0
10
20
30
40
V
50
(V)
Collector to Emitter Voltage
Collector Current
I
(A)
CE
C
4
2SH11
Dynamic Input Characteristics
Switching Characteristics
20
16
12
8
500
400
300
200
100
1000
500
V
CC
= 400 V
300 V
200 V
V
CE
tf
200
100
td(off)
td(on)
V
GE
50
V
CC
= 400 V
300 V
V
V
= 300 V
= ±15 V
CC
GE
tr
4
0
200 V
20
10
I
= 10 A
32
C
Ω
Rg = 50
Tc = 25 °C
0.2
0.5
1
2
5
10 20
(A)
0
8
16
24
40
Collector Current
I
Gate Charge Qg (nc)
C
Switching Characteristics
Switching Characteristics
= 10 A
1000
500
2000
1000
I
C
Ω
R = 30
L
GE
V
= ±15 V
Rg = 50 Ω
tf
500
200
100
td(off)
tf
200
100
50
td(off)
tr
tr
50
td(on)
td(on)
IC = 10 A
20
10
Ω
RL= 30
VGE= ±15 V
20
5
10
Gate Resistance Rg ( )
50 100 500
–25
0
25
50
75
100 125
Ω
Case Temperature Tc (°C)
5
2SH11
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
0.2
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
PW
T
P
CM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
6
2SH11
Package Dimensions
Unit : mm
• TO–220AB
11.5 max
9.8 max
7.6 min
+ 0.1
– 0.08
4.8 max
f
3.6
1.5 max
1.5 max
0.5
0.76 ±0.1
2.7 max
2.5 ±0.5
5.1 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
7
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