DSS14L [HDSEMI]
SOD-123FL Plastic-Encapsulate Diodes;
| 型号： | DSS14L |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD-123FL Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1626K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSS14L
HD FL 40
SOD123FL Plastic-Encapsulate Diodes
Features
●I
1A
o
SOD-123FL
●VRRM
40V
●High surge current capability
●
●
Polarity: Color band denotes cathode
Low Vf
Applications
●Rectifier
Marking
● DSS14L : S14L
DSS14L
40
Item
Symbol Unit
Test Conditions
Repetitive Peak Reverse Voltage
VRRM
V
Average Forward Current
IF(AV)
A
1.0
60HZ Half-sine wave, Resistance
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
A
50
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+150
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
DSS14L
Item
Symbol Unit
Test Condition
0.45
VF
IF =1.0A
V
Peak Forward Voltage
Peak Reverse Current
IRRM1
IRRM2
T =25℃
0.1
10
a
mA
VRM=VRRM
T =100℃
a
881)
281)
Rθ
Between junction and ambient
Between junction and terminal
J-A
℃/
W
Thermal
Resistance(Typical)
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
50
40
30
20
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
Pulse width=300us
1% Duty Cycle
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
= 150 °C
TA
1
0.1
= 125 °C
TA
1.0
0.1
0.01
0.01
TA = 25 °C
0.001
0.0001
10
20
30
40
50
60
70
80
90 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Voltage(%)
VF(V)
2
H
igh Diode Semiconductor
SOD-123FL
Cathode Band
Top View
2.8 ±0.15
0.8±0.1
3.7 ±0.15
Dimensions in millimeters
SOD-123FL
2.85
1.2
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD123FL
SOD13FL
4
H
igh Diode Semiconductor
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