DSS15 [SUNMATE]
1A Patch Schottky diode 50V S0D-123 series;![DSS15](http://pdffile.icpdf.com/pdfupload1/u00004/img/icpdf/DSS15_1239702_icpdf.jpg)
型号: | DSS15 |
厂家: | ![]() |
描述: | 1A Patch Schottky diode 50V S0D-123 series |
文件: | 总2页 (文件大小:318K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DSS12 - DSS120
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 200V
CURRENT: 1.0 A
Features
!
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
!
!
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
!
!
B
250 C/10 seconds,0.37”5(9.5mm) lead length,
5 lbs. (2.3kg) tension
C
E
SOD-123FL
Mechanical Data
Dim Min Max
Typ
3.58 3.72 3.65
2.72 2.78 2.75
1.77 1.83 1.80
1.02 1.08 1.05
0.097 1.03 1.00
0.13 0.17 0.15
0.53 0.57 0.55
Case: JEDEC SOD-123FL molded
plastic body over passivated junction
!
A
B
C
D
E
H
L
Terminals
!
!
: Plated axial leads,
D
H
Method 2026
solderable per MIL-STD-750,
L
Polarity
!
!
: Color band denotes cathode end
Mounting Position
: Any
All Dimensions in mm
E
Weight
:0.0007 ounce, 0.02 grams
!
A
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
DSS17
Unit
DSS18 DSS19 DSS110 DSS115 DSS120
DSS12 DSS13 DSS14 DSS15 DSS16
Characteristic
Maximum repetitive peak reverse voltage
20
30
40
50
60
70
80
90
100
150
200
VRRM
V
Maximum RMS voltage
14
20
21
30
28
40
35
50
42
60
49
70
56
80
63
90
70
105
150
140
200
V
V
V
RMS
100
Maximum DC blocking voltage
Maximum average forward rectified current
VDC
I(AV)
A
1.0
Peak forward surge current
IFSM
VF
25.0
A
V
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
0.55
110
0.70
0.85
0.95
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
0.2
2.0
mA
pF
IR
5.0
80
TA=100 C
10.0
Typical junction capacitance (NOTE 1)
CJ
Operating junction temperature range
Storage temperature range
-65 to +125
-65 to +150
TJ
TSTG
C
C
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
1 of 2
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RATINGS AND CHARACTERISTIC CURVES DSS12 THRU DSS120
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
1
0.8
0.6
0.4
0.2
0
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
5.0
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
DSS12-DSS16
DSS17-DSS120
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
20
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
DSS12-DSS14
DSS15-DSS16
0.1
DSS17-DSS115
DSS120
TJ=25 C
0.01
0.001
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
DSS12-DSS14
DSS15-DSS120
100
TJ=25 C
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
2 of 2
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