DSS16-0045AS [IXYS]
Power Schottky Rectifier; 功率肖特基整流器型号: | DSS16-0045AS |
厂家: | IXYS CORPORATION |
描述: | Power Schottky Rectifier |
文件: | 总2页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DSS 16-0045A
DSS 16-0045AS
IFAV = 16 A
VRRM = 45 V
Power Schottky Rectifier
VF = 0.57 V
TO-263 AB
(AS-Type)
TO-220 AC
(A-Type)
VRSM
V
VRRM
V
Type
A
C
45
45
DSS 16-0045A
DSS 16-0045AS
C (TAB)
C
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAV
35
16
A
A
TC = 160°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
280
32
A
mJ
A
• Epoxy meets UL 94V-0
EAS
IAR
1.5
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
(dv/dt)cr
1000
V/ms
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
°C
°C
°C
Ptot
TC = 25°C
mounting torque
typical
105
0.4...0.6
2
W
Nm
g
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
Md
Weight
• Low noise switching
• Low losses
Symbol
IR
VF
Conditions
Characteristic Values
typ.
max.
Dimensionsseeoutlines.pdf
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
0.5
5
mA
mA
IF = 15 A;
IF = 15 A;
IF = 30 A;
TVJ = 125°C
TVJ 25°C
TVJ = 125°C
0.57
0.67
0.69
V
V
V
=
RthJC
RthCH
1.4
K/W
K/W
0.5
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
DSS 16-0045A
DSS 16-0045AS
100
A
10000
100
mA
pF
CT
10
TVJ=175°C
IR
IF
150°C
125°C
1
10
1000
0.1 100°C
75°C
TVJ
=
175°C
150°C
125°C
25°C
0.01
50°C
TVJ= 25°C
25°C
1
0.0
100
0.001
0.2
0.4
0.6
0.8
1.0
0
10
20
30
VR
40
V
V
0
10
20
30
40
VR
50
V
VF
Fig. 1 Maximumforwardvoltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
40
A
35
25
W
20
30
IF(AV)
25
d=0.5
DC
P(AV)
d =
DC
0.5
0.33
0.25
0.17
0.08
15
10
5
20
15
10
5
0
0
0
40
80
120
TC
160°C
0
5
10 15 20 25 30 35
IF(AV)
A
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
1
D=0.5
K/W
0.33
ZthJC
0.25
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
DSS 16-0045A
0.01
0.0001
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2000 IXYS All rights reserved
2 - 2
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-263AB, TO-263AB, 3 PIN
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