S10226-10 [HAMAMATSU]
CMOS Sensor, Rectangular, Surface Mount, PACKAGE-8;
| 型号： | S10226-10 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CMOS Sensor, Rectangular, Surface Mount, PACKAGE-8 输出元件 传感器 换能器 |
| 文件： | 总8页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS linear image sensor
S10226-10
Small, resin-sealed CMOS image sensor
The S10226-10 is a resin-sealed CMOS linear image sensor to offer compact size and high cost-performance compared to
our previous product (S9226 series).
Features
Applications
Compact and high cost-performance
Barcode readers
Surface mount type package: 2.4 × 9.1 × 1.6t mm
Displacement meters
Refractometers
Pixel pitch: 7.8 μm
Pixel height: 125 μm
Interferometers
1024 pixels
Miniature spectrometers
Single 3.3 V power supply operation
High sensitivity, low dark current, low noise
On-chip charge amplifier with excellent input/output
characteristics
Built-in timing generator allows operation with only
Start and Clock pulse inputs.
Video data rate: 200 kHz max.
Spectral response range: 400 to 1000 nm
Structure
Parameter
Number of pixels
Pixel pitch
Pixel height
Photosensitive area length
Package
Specification
1024
Unit
-
μm
μm
mm
-
7.8
125
7.9872
Glass epoxy
Silicone resin
Seal material
-
Absolute maximum ratings
Parameter
Supply voltage
Gain selection terminal voltage
Clock pulse voltage
Symbol
Vdd
Vg
Condition
Ta=25 °C
Ta=25 °C
Value
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
Unit
V
V
V
V
°C
°C
-
V(CLK) Ta=25 °C
Start pulse voltage
V(ST)
Topr
Tstg
Ta=25 °C
Operating temperature*1
-25 to +85
-25 to +85
Storage temperature*1
2
Reflow soldering conditions
*
Tsol
Peak temperature 260 °C, 3 times (See P.7)
*1: No condensation
*2: JEDEC level 2a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
1
www.hamamatsu.com
CMOS linear image sensor
S10226-10
Recommended terminal voltage (Ta=25 °C)
Parameter
Symbol
Vdd
Min.
3.3
Typ.
5
Max.
5.25
Unit
V
Supply voltage
Gain selection
terminal voltage
High gain
Low gain
High level
Low level
High level
Low level
0
-
0.4
V
V
V
V
V
V
Vg
Vdd - 0.25
Vdd - 0.25
0
Vdd - 0.25
0
Vdd
Vdd
-
Vdd
-
Vdd + 0.25
Vdd + 0.25
0.4
Vdd + 0.25
0.4
Clock pulse voltage
V(CLK)
V(ST)
Start pulse voltage
Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]
Parameter
Clock pulse frequency
Video data rate
Symbol
f(CLK)
VR
Min.
100
-
-
-
Typ.
Max.
800
-
8
7
Unit
kHz
kHz
-
f(CLK)/4
5
Vdd=5 V
Vdd=3.3 V
Current consumption
I
mA
4.5
Electrical and optical characteristics [Ta=25 °C, f(CLK)=800 kHz, Vdd=5 V: V(CLK)=V(ST)=5 V, Vdd=3.3 V: V(CLK)=V(ST)=3.3 V]
Parameter
Spectral response range
Peak sensitivity wavelength
Symbol
λ
λp
Min.
Typ.
400 to 1000
Max.
Unit
nm
nm
-
-
-
-
-
2.6
1.4
-
-
0.2
-
700
0.8
0.4
0.5
0.25
3.2
2.0
1.4
0.7
0.4
-
-
8
4
5
2.5
-
High gain
Vdd=5 V
Low gain
High gain
Low gain
Vdd=5 V
Vdd=3.3 V
High gain
Low gain
Dark output
Vd
mV
voltage*3
Vdd=3.3 V
Saturation output
voltage
Vsat
Nr
V
-
2.2
1.1
0.6
±8.5
Readout noise
mV rms
Output offset voltage
Photoresponse nonuniformity*4 *5
Vo
PRNU
V
%
*3: Integration time=10 ms
*4: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both
ends, and is defined as follows:
PRNU= ∆X/X × 100 (%)
X: average output of 1022 pixels excluding the pixels at both ends, ∆X: difference between X and maximum or minimum output
*5: Measured with a tungsten lamp of 2856 K
Block diagram
CLK
4
ST
5
Trig
3
GND
2
Vdd
7
EOS
6
Vg
1
Timing generator
Shift register
Charge
amp
Clamp
circuit
8
Video
Address switch
1
2
3
4
5
1023 1024
Photodiode array
KMPDC0165ED
2
CMOS linear image sensor
S10226-10
Spectral response (typical example)
Dark output voltage vs. temperature (typical example)
(Ta=25 °C)
(Ts=10 ms)
100
100
Vdd=5 V
Vdd=3.3 V
80
60
40
20
10
1
High gain
Low gain
High gain
0.1
Low gain
20
0.01
0
0.001
400 500 600 700 800 900 1000 1100 1200
-40
-20
0
40
60
80
100
Wavelength (nm)
Temperature (°C)
KMPDB0417EA
KMPDB0259EB
Current consumption vs. temperature (typical example)
(Dark state)
6.5
Vdd=5 V
Vdd=3.3 V
High gain
Low gain
6.0
5.5
5.0
4.5
4.0
3.5
High gain
Low gain
3.0
2.5
-40
-20
0
20
40
60
80
100
Temperature (°C)
KMPDB0260EB
3
CMOS linear image sensor
S10226-10
Timing chart
1/f(CLK)
CLK
ST
tpi(ST), Integration time
Video
Trig
EOS
tr(CLK)
tf(CLK)
CLK
1/f(CLK)
tr(ST)
tf(ST)
ST
tvd
Video
KMPDB0164EC
Parameter
Start pulse interval
Symbol
tpi(ST)
Min.
4104/f(CLK)
Typ.
-
Max.
-
Unit
s
Start pulse rise and fall times
Clock pulse duty ratio
Clock pulse rise and fall times
Video delay time*6
tr(ST), tf(ST)
-
tr(CLK), tf(CLK)
tvd
0
40
0
20
50
20
20
30
60
30
30
ns
%
ns
ns
10
*6: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V
Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts operating at
this timing.
The storage time is determined by the start pulse intervals. However, since the charge storage of each pixel is carried out
between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differs
depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed.
4
CMOS linear image sensor
S10226-10
Dimensional outline (unit: mm)
Photosensitive area
7.9872 × 0.125
9.1
0.5564 0.2
[Top view]
1 ch
3.9936
1024 ch
Direction on scan
Photosensitive
surface
Silicone resin
Top
[Side view]
Bottom
3.4
Glass epoxy
1.9
1.9
Tolerance unless
otherwise noted: 0.1
[Bottom view]
Electrode
Index mark
(8 ×) ϕ0.5
KMPDA0315EB
Pin connections
Pin no.
Name
Vg
GND
Trig
I/O
I
-
Description
1
2
3
Gain selection; low gain: Vdd or open, high gain: GND
Ground
O
Trigger: timing signal output for A/D converter
Clock pulse (pulse for synchronizing the internally generated pulses that control sensor operation
frequency)
Start pulse (pulse for initializing the internally generated pulses that set the timing to start
reading pixel signals)
4
5
CLK
ST
I
I
6
7
8
EOS
Vdd
Video
O
I
O
End of scan (shift register end-of-scan signal pulse generated after reading signals from all pixels)
Power supply voltage
Video signal output
Recommended land pattern (unit: mm)
(8 ×) ɸ0.7
1.9
3.4
1.9
KMPDC0248EB
5
CMOS linear image sensor
S10226-10
Appearance inspection standards
Parameter
Foreign matter on photosensitive area
Test criterion
10 ꢀm max.
Inspection method
Automated camera
Standard packing specifications
Reel (conforms to JEITA ET-7200)
Dimensions
330 mm
Hub diameter
100 mm
Tape width
16 mm
Material
PPE
Electrostatic characteristic
Conductive
Embossed tape (unit: mm, material: polycarbonete resin, conductive)
4.0 0.1
ɸ1.5+-00.1
2.0 0.1
0.32 0.05
ɸ1.5+-00.25
1 ch
1.89 0.1
8.0 0.1
Reel feed direction
2.75 0.1
KMPDC0433EA
Packing quantity
2000 pcs/reel
Packing type
Reel and desiccant in moisture-proof packing (vaccum-sealed)
6
CMOS linear image sensor
S10226-10
Recommended temperature profile for reflow soldering (typical example)
300 °C
Peak temperature
260 °C max.
Peak temperature - 5 °C
30 s max.
Cooling
Heating
3 °C/s max.
6 °C/s max.
217 °C
200 °C
150 °C
Preheating
60 to 120 s
Soldering
60 to 150 s
25 °C to peak temperature
8 m max.
Time
KMPDB0405EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 4 weeks.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
∙ When three or more months have passed or if the packing bag has not been stored in an environment described above, perform
baking. For the baking method, see the related information “Resin sealed type CMOS linear image sensor / Precautions.”
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device
with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools.
Protect this device from surge voltages which might be caused by peripheral equipment.
·
·
(2) Package handling
The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface
of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when
designing the optical systems.
·
Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air.
·
(3) Surface protective tape
Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the
·
tape before use.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an ex-
·
cessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
(5) UV exposure
This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light.
·
7
CMOS linear image sensor
S10226-10
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensor / Precautions
∙ Resin-sealed CMOS linear image sensors / Precautions
Information described in this material is current as of July, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KMPD1151E01 Jul. 2014 DN
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