S10227-10_15 [HAMAMATSU]
CMOS linear image sensor;
| 型号： | S10227-10_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CMOS linear image sensor |
| 文件： | 总7页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS linear image sensor
S10227-10
Small, resin-sealed CMOS image sensor
The S10227-10 is a resin-sealed CMOS linear image sensor to offer compact size and high cost-performance compared to
our previous product (S9227 series).
Features
Applications
Compact and high cost-performance
Barcode readers
Surface mount type package: 4.4 × 9.1 × 1.6t mm
Displacement meters
Refractometers
Pixel pitch: 12.5 μm
Pixel height: 250 μm
Interferometers
512 pixels
Miniature spectrometers
Single 5 V power supply operation
Video data rate: 5 MHz max.
Simultaneous charge integration
Shutter function
High sensitivity, low dark current, low noise
Built-in timing generator allows operation with only
Start and Clock pulse inputs.
Spectral response range: 400 to 1000 nm
Structure
Parameter
Number of pixels
Pixel pitch
Pixel height
Photosensitive area length
Package
Specification
512
Unit
-
μm
μm
mm
-
12.5
250
6.4
Glass epoxy
Silicone resin
Seal material
-
Absolute maximum ratings
Parameter
Supply voltage
Symbol
Vdd
Condition
Ta=25 °C
Value
-0.3 to +6
Unit
V
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
Reflow soldering conditions
V(CLK) Ta=25 °C
-0.3 to +6
-0.3 to +6
-25 to +85
V
V
°C
°C
-
V(ST)
Topr
Tstg
Ta=25 °C
-25 to +85
2
*
Tsol
Peak temperature 260°C, 3 times (See P.6)
*1: No condensation
*2: JEDEC level 2a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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CMOS linear image sensor
S10227-10
Recommended terminal voltage
Parameter
Supply voltage
Symbol
Vdd
Min.
4.75
Typ.
5
Max.
5.25
Unit
V
High level
Low level
High level
Low level
Vdd - 0.25
Vdd
0
Vdd
0
Vdd + 0.25
V
V
V
V
Clock pulse voltage
Start pulse voltage
V(CLK)
V(ST)
-
-
Vdd - 0.25
-
Vdd + 0.25
-
Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]
Parameter
Clock pulse frequency
Video data rate
Current consumption
Conversion efficiency
Symbol
f(CLK)
VR
I
CE
Min.
50 k
-
20
-
Typ.
-
f(CLK)
26
Max.
5 M
-
32
-
Unit
Hz
Hz
mA
μV/e
-
1.6
Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=5 MHz]
Parameter
Spectral response range
Symbol
λ
Min.
Typ.
400 to 1000
Max.
Unit
nm
Peak sensitivity wavelength
λp
Vd
Vsat
Nr
Vo
-
-
4
-
0.4
-
700
1
4.3
0.45
0.6
-
-
10
-
1
0.9
±8.5
nm
mV
V
mV rms
V
3
Dark output voltage
Saturation output voltage
*
4
*
Readout noise
Output offset voltage
Photoresponse nonuniformity*5 *6
PRNU
%
*3: Integration time=10 ms
*4: Voltage difference from Vo
*5: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 510 pixels excluding the pixels at both
ends, and is defined as follows:
PRNU= ∆X/X × 100 (%)
X: average output of 510 pixels excluding the pixels at both ends, ∆X: difference between X and maximum or minimum output
*6: Measured with a tungsten lamp of 2856 K
Spectral response (typical example)
Block diagram
CLK
8
ST
7
GND
1
Vdd
4
(Ta=25 °C)
100
Timing
generator
80
60
40
Shift register
Hold circuit
6
5
EOS
Video
Charge amp array
Photodiode
array
1
2
3
4
511 512
KMPDB0167EC
20
0
400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0258ED
2
CMOS linear image sensor
S10227-10
Timing chart
chart (S9227-03)
Trigger
1/f(CLK)
1 2 3 4 5 6 7 8 9 101112131415
CLK
Integration time
2.5 clocks
8.5 clocks
tlp(ST)
ST
thp(ST)
tpi(ST)
100 ns
512
14 clocks
Video
EOS
tf(CLK)
tr(CLK)
CLK
ST
CLK
1/f(CLK)
tlp(ST)
Video
tr(ST)
tf(ST)
tvd1
tvd2
thp(ST)
tpi(ST)
KMPDC0166E
KMPDC0166EF
Parameter
Start pulse interval
Start pulse high period
Start pulse low period
Start pulse rise and fall times
Clock pulse duty
Clock pulse rise and fall times
Video delay time 1
Video delay time 2
Symbol
Min.
530/f(CLK)
8/f(CLK)
15/f(CLK)
Typ.
-
-
Max.
Unit
s
s
tpi(ST)
thp(ST)
tlp(ST)
1100 m
1000 m
100 m
30
55
30
-
s
tr(ST), tf(ST)
-
tr(CLK), tf(CLK)
tvd1
0
45
0
32
40
20
50
20
40
50
ns
%
ns
ns
ns
48
60
tvd2
Note: Dark output increases if the start pulse period or the start pulse high period is lengthened.
The internal timing circuit starts operating at the rise of CLK pulse immediately after ST pulse sets to low.
The integration time equals the high period of ST pulse plus 6 CLK cycles.
The output from 1st channel appears 14 clocks plus 100 ns after the falling edge of ST pulse.
The EOS pulse is output 39 ns after the falling edge of CLK pulse.
The output voltage after reading the last pixel (512 ch) is indefinite.
Start pulse setting example (for setting the start pulse period to a minimum and the integration time to a maximum)
Start pulse high period=515/f(CLK), Start pulse low period=15/f(CLK)
3
CMOS linear image sensor
S10227-10
Dimensional outline (unit: mm)
9.1
1.35 0.2
3.2
Photosensitive area
(6.4 × 0.25)
[Top view]
1 ch
512 ch
Photosensitive
surface
Silicone resin
Top
[Side view]
Bottom
Glass epoxy
2.54 2.54 2.54
[Bottom view]
Tolerance unless otherwise
noted: 0.1
Values in parentheses indicate
reference value.
Electrode
(8 ×) ϕ0.5
Index mark
KMPDA0316EB
Pin connections
Pin no.
Symbol
GND
NC
I/O
-
-
-
I
O
O
I
Discription
1
2
3
4
5
6
7
8
Ground
No connection
No connection
Power supply voltage
Video signal output
End of scan
NC
Vdd
Video
EOS
ST
Start pulse
Clock pulse
CLK
I
4
CMOS linear image sensor
S10227-10
Recommended land pattern (unit: mm)
(8 ×) ɸ0.7
2.54
2.54
2.54
KMPDC0257EA
Appearance inspection standards
Parameter
Foreign matter on photosensitive area
Test criterion
10 ꢀm max.
Inspection method
Automated camera
Standard packing specifications
Reel (conforms to JEITA ET-7200)
Dimensions
330 mm
Hub diameter
100 mm
Tape width
16 mm
Material
PPE
Electrostatic characteristic
Conductive
Embossed tape (unit: mm, material: polycarbonate resin, conductive)
4.0 0.1
ɸ1.5+-00.1
2.0 0.05
0.32 0.05
ϕ1.5+-00.25
1.89 0.1
8.0 0.1
1 ch
Reel feed direction
4.75 0.1
KMPDC0450EA
Packing quantity
2000 pcs/reel
Packing type
Reel and desiccant in moisture-proof packing (vaccum-sealed)
5
CMOS linear image sensor
S10227-10
Recommended temperature profile for reflow soldering (typical example)
300 °C
Peak temperature
260 °C max.
Peak temperature - 5 °C
30 s max.
Cooling
Heating
3 °C/s max.
6 °C/s max.
217 °C
200 °C
150 °C
Preheating
60 to 120 s
Soldering
60 to 150 s
25 °C to peak temperature
8 m max.
Time
KMPDB0405EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 4 weeks.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
∙ When three or more months have passed or if the packing bag has not been stored in an environment described above, perform
baking. For the baking method, see the related information “Resin sealed type CMOS linear image sensor / Precautions.”
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device
with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools.
Protect this device from surge voltages which might be caused by peripheral equipment.
·
·
(2) Package handling
The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface
of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when
designing the optical systems.
·
Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air.
·
(3) Surface protective tape
Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the
·
tape before use.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an ex-
·
cessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
(5) UV exposure
This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light.
·
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CMOS linear image sensor
S10227-10
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensor / Precautions
∙ Resin-sealed CMOS linear image sensors / Precautions
Information described in this material is current as of March 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KMPD1152E03 Mar. 2015 DN
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