S10227 [HAMAMATSU]
CMOS linear image sensor Small plastic package CMOS image sensor; CMOS线性图像传感器小型塑料封装的CMOS图像传感器
| 型号： | S10227 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CMOS linear image sensor Small plastic package CMOS image sensor |
| 文件： | 总4页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CMOS linear image sensor
S10227
Small plastic package CMOS image sensor
Features
Applications
Compact and high cost-performance
Surface mount package: 4.4 × 9.1 × 1.6 t mm
Pixel pitch: 12.5 µm
Barcode readers
Displacement meters
Refractometers
Pixel height: 250 µm
Interferometers
Number of pixels: 512 ch
Miniature spectrometers
Single 5 V power supply operation available
Video data rate: 5 MHz max.
Simultaneous charge integration
Shutter function
High sensitivity, low dark current, low noise
Built-in timing generator allows operation with only
Start and Clock pulse inputs
Spectral response range: 400 to 1000 nm
Note: Consult with the nearest sales office if an evaluation
board is needed.
ꢀ Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage
Symbol
Vdd
Value
Unit
V
V
V
°C
°C
-0.3 to +6
-0.3 to +6
-0.3 to +6
-25 to +85
-25 to +85
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
*1: No condensation
V(clk)
V(st)
Topr
Tstg
ꢀ Dimensions
Parameter
Number of pixels
Pixel pitch
Pixel height
Active area length
Value
512
12.5
250
6.4
Unit
-
µm
µm
mm
1
CMOS linear image sensor S10227
ꢀ Recommended terminal voltage
Parameter
Supply voltage
Symbol
Vdd
Min.
4.75
Typ.
5
Max.
5.25
Unit
V
High
Clock pulse voltage
Low
High
Start pulse voltage
Low
Vdd - 0.25
Vdd
0
Vdd
0
Vdd + 0.25
V
V
V
V
V(clk)
V(st)
-
-
Vdd - 0.25
-
Vdd + 0.25
-
ꢀ Electrical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Clock pulse frequency
Video data rate
Symbol
f(clk)
VR
Min.
Typ.
-
f(clk)
150
(1.6)
Max.
5
-
-
-
Unit
MHz
MHz
mW
0.1
-
-
-
Power consumption
Conversion efficiency
P
CE
µV/e-
ꢀ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Spectral response range
Peak sensitivity wavelength
Dark output voltage*2
Symbol
λ
λp
Vd
Min.
Typ.
Max.
Unit
nm
nm
mV
V
mV rms
V
400 to 1000
-
-
-
-
700
0.5
4.2
0.4
0.6
-
-
5
-
-
-
Saturation output voltage
Readout noise
Vsat
Nr
Offset output voltage
Photo response non-uniformity*3 *4
*2: Storage time Ts=10 ms
Vo
PRNU
-
±±.5
%
*3: Uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50% of the
saturation exposure level and using 510 pixels excluding both ends pixels as follows:
PRNU= ∆X/X × 100 (%)
X: Average output of 510 pixels excluding the pixels at both ends
∆X: Difference between X and maximum or minimum output
*4: Measured with a tungsten lamp of 2±56 K
ꢀꢀSpectral response (typical example)
ꢀꢀBlock diagram
(Ta=25 ˚C)
100
clk
8
st
7
GND
1
Vdd
4
80
Timing
generator
60
Shift register
Hold circuit
6
5
EOS
Video
Charge amp array
40
Photodiode
array
1
2
3
4
511 512
20
0
KMPDC0167EA
400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0258EC
2
CMOS linear image sensor S10227
ꢀꢀTiming chart
tpw(clk), T1
Trig
1 2 3 4 131415
clk
st
Integration time
2.5 clocks
8.5 clocks
tlw(st)
thw(st)
tpw(st)
512
15 clocks
Video
EOS
tf(clk)
tr(clk)
clk
st
clk
tpw(clk)
Video
tvd1
tf(st)
tr(st)
tvd2
tlw(st)
thw(st)
tpw(st)
KMPDC0166EB
Parameter
Start pulse width
Start pulse high width
Start pulse low width
Start pulse rise and fall time
Clock pulse width
Clock pulse rise and fall time
Video delay time 1
Video delay time 2
Symbol
tpw(st)
thw(st)
Min.
T1 × 530
T1 × ±
T1 × 15
Typ.
-
-
-
20
-
20
30
40
Max.
-
-
-
30
-
30
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
tlw(st)
tr(st), tf(st)
tpw(clk), T1
tr(clk), tf(clk)
tvd1
0
200
0
-
-
tvd2
Note: The internal circuit starts operating at the rise of clk pulse immediately after st pulse sets to low.
The integration time equals the high period of st pulse plus 6 clk cycles.
ꢀꢀDimensional outlines (unit: mm)
9.1
4.55 ± 0.2
Active area
(6.4 × 0.25)
1 ch
512 ch
Photosensitive
surface
Epoxy resin
Print circuit
board
GND
NC
NC
2.54 2.54 2.54
VDD
Video
EOS
st
clk
Tolerance unless otherwise
noted: ±0.1
Values in parentheses indicate
reference value.
Electrodes
(8 ×) 0.5
Index mark
KMPDA0213EB
3
CMOS linear image sensor S10227
ꢀ Pin connection
Pin no.
ꢀ
Name
GND
NC
Description
Input/output
Ground
Input
-
-
ꢀ
ꢀ
NC
ꢀ
ꢀ
Vdd
Video
Power supply voltage
Video signal output
Input
Output
End of scan (Shift register end-of-scan signal pulse generated after reading
signals from all pixels)
Start pulse (Pulse for initializing the internally generated pulses that set the
timing to start reading pixel signals)
Clock pulse (Pulse for synchronizing the internally generated pulses that
control sensor operation frequency)
ꢀ
ꢀ
ꢀ
EOS
st
Output
Input
clk
Input
ꢀꢀRecommended land pattern
ꢀꢀTemperature profile of reflow soldering
250
(8 ×) 0.7
200
150
100
2.54
2.54
2.54
50
KMPDC0257EA
0
0
50
100
150
200
250
300
350
Time (s)
KMPDB0261EA
ꢀꢀPrecautions for use
(1) Electrostatic countermeasures
· This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying
the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent
static discharges.
· Protect this device from surge voltages which might be caused by peripheral equipment.
(2) Package handling
· The package surface is easily scratched, so handle this device carefully.
· Dust or grime on the light input window might cause non-uniform sensitivity. To remove dust or grime, blow it off with
compressed air.
(3) Reflow soldering
· To prevent damaging this device during reflow soldering, perform soldering within 24 hours after opening the moisture-proof
packing.
· The extent of damage that might occur during reflow soldering depends on the PC board size and reflow oven conditions.
Check the device for any damage before reflow soldering.
(4) Surface protective tape
· Protective tape is affixed to the surface of this product to protect the active area. After assembling the product, remove the
tape before use.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1099E05
Jun. 2010 DN
4
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