UG1A [GULFSEMI]
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE：50 TO 200V CURRENT： 1.0A; 超快高效塑料硅整流电压： 50〜 200V电流： 1.0A
| 型号： | UG1A |
| 厂家： | 
GULF SEMICONDUCTOR |
| 描述： | ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE：50 TO 200V CURRENT： 1.0A |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG1A THRU UG1D
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
VOLTAGE：50 TO 200V
CURRENT： 1.0A
DO –41\DO-204AL
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
MECHANICAL DATA
Terminal：Plated axial leads solderable per
MIL-STD 202E, method 208C
Case：Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity：color band denotes cathode
Mounting position：any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
UG
1A
50
UG
1B
100
UG
1C
150
UG
1D
200
SYMBOL
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Vrrm
Vrms
Vdc
V
V
V
35
50
70
105
150
140
200
Maximum DC blocking Voltage
100
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =75℃
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at Forward current
1A Peak
If(av)
Ifsm
Vf
1.0
A
A
V
40.0
0.95
5.0
200.0
15
μA
μA
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Ir
Trr
Cj
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
Typical Thermal Resistance
(Note 2)
(Note 3)
7.0
R(ja)
Tstg,Tj
60.0
℃/W
℃
Storage and Operating Junction Temperature
-55 to +150
Note：
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted
Rev.A4
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RATINGS AND CHARACTERISTIC CURVES UG1A THRU UG1D
1 Rev.A4
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