UG1A-E3 [VISHAY]

DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, MINIATURE, PLASTIC, DO-41, 2 PIN, Signal Diode;
UG1A-E3
型号: UG1A-E3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, MINIATURE, PLASTIC, DO-41, 2 PIN, Signal Diode

二极管
文件: 总4页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UG1A thru UG1D  
Vishay General Semiconductor  
Miniature Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 200 V  
40 A  
15 ns  
VF  
0.95 V  
Tj max.  
150 °C  
DO-204AL (DO-41)  
Features  
Typical Applications  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Soft recovery characteristics  
• Low forward voltage drop  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Mechanical Data  
Case: DO-204AL (DO-41)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbols  
VRRM  
UG1A  
50  
UG1B  
100  
UG1C  
150  
UG1D  
200  
Units  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
105  
150  
140  
200  
V
V
A
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
1.0  
40  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88760  
21-Jul-05  
www.vishay.com  
1
UG1A thru UG1D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Test condition  
Symbols  
VF  
Value  
0.95  
Units  
V
at IF = 1.0 A (1)  
Maximum instantaneous forward  
voltage  
Maximum DC reverse current at rated  
DC blocking voltage  
TA = 25 °C  
TA = 100 °C  
IR  
5.0  
200  
µA  
Maximum reverse recovery time  
Maximum reverse recovery time  
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
15  
ns  
ns  
at IF = 1.0 A, VR = 30 V,  
TJ = 25 °C  
25  
35  
di/dt = 50 A/µs, Irr = 10 % IRM  
TJ = 100 °C  
Maximum stored charge  
IF = 1.0 A, VR = 30 V,  
TJ = 25 °C  
Qrr  
CJ  
8.0  
12  
nC  
pF  
di/dt = 50 A/µs, Irr = 10 % IRM  
TJ = 100 °C  
Typical junction capacitance  
at 4.0 V, 1 MHz  
7
Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Typical thermal resistance (1)  
Symbols  
RθJA  
RθJL  
UG1A  
UG1B  
UG1C  
UG1D  
Units  
°C/W  
60  
20  
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.5  
1.25  
1.0  
100  
10  
1
TL = 75 °C  
8.3ms Single Half Sine-Wave  
Resistive or Inductive Load  
0.375" (9.5mm) Lead Length  
TL Lead Temperature  
0.75  
0.5  
TA, Ambient Temperature  
P.C.B. Mounted  
0.5" x 0.5" (12 x 12mm)  
Copper Pad Areas  
0.25  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
Number of Cycles at 60 HZ  
100  
Temperature (°C)  
Figure 1. Forward Current Derating Curves  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88760  
21-Jul-05  
2
UG1A thru UG1D  
Vishay General Semiconductor  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
trr  
IF = 1.0A  
VR=30V  
Q
rr  
TJ = 100°C  
di/dt=20A/  
di/dt=50A/  
µ
s
s
Pulse Width = 300 µs  
1% Duty Cycle  
µ
TJ = 25°C  
di/dt=100A/  
di/dt=150A/  
µs  
µs  
di/dt=150A/ µs  
di/dt=100A/  
µs  
0.1  
di/dt=50A/  
µ
s
µs  
di/dt=20A/  
100 125 150 175  
Junction Temperature (°C)  
0.01  
0.4  
0
25  
50  
75  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Reverse Switching Charateristics  
100  
100  
T
= 25°C  
J
f = 1.0MHZ  
Vsig = 50mVp-p  
10  
TJ = 100°C  
1
10  
TJ = 25°C  
0.1  
1
0.1  
0.01  
0
20  
40  
60  
80  
100  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Voltage (V)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Junction Capacitance  
Package outline dimensions in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Document Number 88760  
21-Jul-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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