UG1AE3 [VISHAY]

DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode;
UG1AE3
型号: UG1AE3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

文件: 总3页 (文件大小:155K)
中文:  中文翻译
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UG1A thru UG1D  
Vishay Semiconductors  
Miniature Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 200 V  
40 A  
15 ns  
VF  
0.95 V  
Tj max.  
150 °C  
DO-204AL (DO-41)  
Features  
Typical Applications  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Soft recovery characteristics  
• Low forward voltage drop  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Mechanical Data  
Case: DO-204AL (DO-41)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbols  
VRRM  
UG1A  
50  
UG1B  
100  
UG1C  
150  
UG1D  
200  
Units  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
105  
150  
140  
200  
V
V
A
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
1.0  
40  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88760  
21-Jul-05  
www.vishay.com  
1
UG1A thru UG1D  
Vishay Semiconductors  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Test condition  
Symbols  
VF  
Value  
0.95  
Units  
V
at IF = 1.0 A (1)  
Maximum instantaneous forward  
voltage  
Maximum DC reverse current at rated  
DC blocking voltage  
TA = 25 °C  
TA = 100 °C  
IR  
5.0  
200  
µA  
Maximum reverse recovery time  
Maximum reverse recovery time  
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
15  
ns  
ns  
at IF = 1.0 A, VR = 30 V,  
TJ = 25 °C  
25  
35  
di/dt = 50 A/µs, Irr = 10 % IRM  
TJ = 100 °C  
Maximum stored charge  
IF = 1.0 A, VR = 30 V,  
TJ = 25 °C  
Qrr  
CJ  
8.0  
12  
nC  
pF  
di/dt = 50 A/µs, Irr = 10 % IRM  
TJ = 100 °C  
Typical junction capacitance  
at 4.0 V, 1 MHz  
7
Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Typical thermal resistance (1)  
Symbols  
RθJA  
RθJL  
UG1A  
UG1B  
UG1C  
UG1D  
Units  
°C/W  
60  
20  
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.5  
1.25  
1.0  
100  
10  
1
TL = 75 °C  
8.3ms Single Half Sine-Wave  
Resistive or Inductive Load  
0.375" (9.5mm) Lead Length  
TL Lead Temperature  
0.75  
0.5  
TA, Ambient Temperature  
P.C.B. Mounted  
0.5" x 0.5" (12 x 12mm)  
Copper Pad Areas  
0.25  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
Number of Cycles at 60 HZ  
100  
Temperature (°C)  
Figure 1. Forward Current Derating Curves  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88760  
21-Jul-05  
2
UG1A thru UG1D  
Vishay Semiconductors  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
trr  
IF = 1.0A  
VR=30V  
Q
rr  
TJ = 100°C  
di/dt=20A/  
di/dt=50A/  
μ
s
s
Pulse Width = 300 μs  
1% Duty Cycle  
μ
TJ = 25°C  
di/dt=100A/  
di/dt=150A/  
μs  
μs  
di/dt=150A/ μs  
di/dt=100A/  
μs  
0.1  
di/dt=50A/  
μ
s
μs  
di/dt=20A/  
100 125 150 175  
Junction Temperature (°C)  
0.01  
0.4  
0
25  
50  
75  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Reverse Switching Charateristics  
100  
100  
T
= 25°C  
J
f = 1.0MHZ  
Vsig = 50mVp-p  
10  
TJ = 100°C  
1
10  
TJ = 25°C  
0.1  
1
0.1  
0.01  
0
20  
40  
60  
80  
100  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Voltage (V)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Junction Capacitance  
Package outline dimensions in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Document Number 88760  
21-Jul-05  
www.vishay.com  
3

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