SSF2145CH6_15 [GOOD-ARK]
20V Complementary MOSFET;
| 型号： | SSF2145CH6_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V Complementary MOSFET |
| 文件： | 总5页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2145CH6
20V Complementary MOSFET
Main Product Characteristics
N-Ch
20V
P-Ch
-20V
VDSS
RDS(on)(typ.) 38mohm 64mohm
ID 4.8A 2.9A
MarkingandPin
SchematicDiagram
Assignment
TSOP-6
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for load switching and buttery
protection applications
150℃operating temperature
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinloadswitching andawidevarietyof other applications.
Absolute Max Rating
Max.
Symbol
Parameter
Units
N-channel
P-channel
ID @ TC = 25°C
ID @ TC = 100°C
IDM
4.8
-2.9
-2.4
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
A
3.9
17
1.7
-11
PD @TC = 25°C
VDS
1.7
W
V
Power Dissipation③
Drain-Source Voltage
20
-20
VGS
Gate-to-Source Voltage
± 8
± 8
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 150
-55 to + 150
°C
Thermal Resistance
Max.
Symbol
Characteristics
Typ.
Units
N-channel
P-channel
—
76
114
Junction-to-ambient (t ≤ 10s) ④
℃/W
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Page 1 of 5
Rev.1.0
SSF2145CH6
20V Complementary MOSFET
—
53
53
Junction-to-Ambient (PCB mounted, steady-state) ④
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
20
Typ.
—
Max.
—
Units
Conditions
VGS = 0V, ID = 250μA
TJ = 125°C
N-channel
P-channel
Drain-to-Source
22
-20
-22
—
—
—
V(BR)DSS
V
breakdown voltage
—
—
VGS = 0V, ID = -250μA
TJ = 125°C
—
—
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
N-channel
P-channel
P-channel
N-channel
N-channel
N-channel
38
55
80
75
100
1
VGS=4.5V,ID = 3.6A
VGS=-4.5V,ID = -3A
VGS=2.5V,ID = 3.1A
VGS=-3.5V,ID = -2A
VDS = VGS, ID = 250μA
TJ = 125°C
Static
—
68
RDS(on)
Drain-to-Source
on-resistance
mΩ
—
64
—
89
0.4
0.4
-0.4
-0.4
—
0.72
0.56
-0.78
-0.66
—
Gate threshold
voltage
1
VGS(th)
V
-1
VDS = VGS, ID = -250μA
TJ = 125°C
-1
Drain-to-Source
leakage current
1
VDS = 20V,VGS = 0V
VDS = -20V,VGS = 0V
VGS =8V
IDSS
μA
nA
—
—
-1
—
—
100
-100
100
-100
420
70
Gate-to-Source
forward leakage
—
—
VGS = -8V
IGSS
—
—
VGS =8V
—
—
VGS = -8V
Ciss
Input capacitance
Output capacitance
Reverse transfer
capacitance
—
348
58
VGS = 0V,
VDS = 10V,
ƒ = 1.0MHz
Coss
—
—
Crss
32
39
pF
Ciss
Input capacitance
Output capacitance
Reverse transfer
capacitance
P-channel
P-channel
P-channel
—
—
—
519
75
622
90
VGS = 0V,
VDS = -10V,
ƒ = 1.0MHz
Coss
Crss
58
70
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source
Current
Min.
Typ.
Max.
Units
Conditions
N-channel
MOSFET symbol
showing the
—
—
4.8
IS
A
P-channel
N-channel
P-channel
—
—
—
—
-2.9
17
(Body Diode)
Pulsed Source
Current
integral reverse
p-n junction diode.
ISM
A
V
—
—
—
-11
1.2
(Body Diode)
VSD
Diode
Forward N-channel
0.69
IS=0.94A, VGS=0V
www.goodark.com
Page 2 of 5
Rev.1.0
SSF2145CH6
20V Complementary MOSFET
Voltage
P-channel
—
-0.72
-1.2
IS=-0.75A, VGS=0V
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 5
Rev.1.0
SSF2145CH6
20V Complementary MOSFET
Mechanical Data
Millimeters
SYMBOL
MIN
0.90
MAX
1.10
A
A1
b
0.10
0.30
0.08
2.70
2.60
1.40
0.50
0.20
3.10
3.00
1.80
c
D
E
E1
e
0.95 BSC
L
0.35
0.55
Notes：
① Dimensions are inclusive of plating
② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils
③ Dimension L is measured in gauge plane.
④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.goodark.com
Page 4 of 5
Rev.1.0
SSF2145CH6
20V Complementary MOSFET
Ordering and Marking Information
Device Marking: 2145C
Package (Available)
TSOP-6
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/
Tubes/
Inner Box
3000pcs 10pcs
Units/
Inner Boxes/
Units/
Carton Box
120000pcs
Type
Tube
Inner Box Carton Box
30000pcs
TSOP-6
4pcs
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ or 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=125℃ or 150℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
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Page 5 of 5
Rev.1.0
相关型号：
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Power Field-Effect Transistor, 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
GOOD-ARK
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