SSF2160G4 [GOOD-ARK]
Power Field-Effect Transistor, 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | SSF2160G4 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Power Field-Effect Transistor, 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：953K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2160G4
20V N-Channel MOSFET
Main Product Characteristics
VDSS 20V
RDS(on) 28mohm(typ.)
ID 4.5A
S25
MarkingandPin
Assignment
SOT23-3
SchematicDiagram
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for buttery protection, load
switching andgeneralpower management
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and awide variety of other
applications.
Absolute Max Rating
Parameter
Symbol
VDS
Limit
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±10
V
VGS
4.5
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
18
A
IDM
Maximum Power Dissipation
1.1
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
110
℃/W
www.godark.com
Page 1 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Parameter
Symbol
Condition
Min Typ Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
20
V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=3.6A
VGS=2.5V, ID=3.1A
VDS=5V,ID=3.6A
0.65 0.75
1.2
40
60
V
mΩ
mΩ
S
28
Drain-Source On-State Resistance
36
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
4
Clss
Coss
Crss
500
125
70
PF
PF
PF
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
7
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
5.3
16
10
10
2.3
2.9
VDD=10V,ID=3.6A
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=4.2A,
Gate-Source Charge
VGS=4.5V
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
IS
VGS=0V,IS=0.94A
0.8
1.2
4.5
V
A
Diode Forward Current (Note 2)
www.godark.com
Page 2 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.godark.com
Page 3 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Vgs Gate-Source Voltage (V)
Figure 2: Transfer Characteristics
Vds Drain-Source Voltage (V)
Figure 1: Typical Output Characteristics
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 3: Drain-Source On-Resistance
Figure 4： Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vsd Source-Drain Voltage (V)
Figure 6: Rdson vs Vgs
Figure 5 : Source- Drain Diode Forward
www.godark.com
Page 4 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 8： Drain Current
Figure 7: Power Dissipation
Figure 9: Safe Operation Area
www.godark.com
Page 5 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Square Wave Pulse Duration(sec)
Figure 10: Normalized Maximum Transient Thermal Impedance
www.godark.com
Page 6 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Mechanical Data
SOT23-3
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. Tolerance ±0.10mm (4 mil) unless otherwise specified
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 5 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.godark.com
Page 7 of 8
Rev.1.0
SSF2160G4
20V N-Channel MOSFET
Ordering and Marking Information
Device Marking: S25
Package (Available)
SOT23-3
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/
Tubes/
Inner Box
Units/
Inner Boxes/
Units/
Carton Box
120000pcs
Type
Tube
Inner Box Carton Box
30000pcs
SOT23-3 3000pcs 10pcs
4pcs
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ or 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=125℃ or 150℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
www.godark.com
Page 8 of 8
Rev.1.0
相关型号：
SSF22N50A
Power Field-Effect Transistor, 12.4A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
SSF22N50A
Power Field-Effect Transistor, 12.4A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明