SSF22A5E [GOOD-ARK]
20V N-Channel MOSFET;
| 型号： | SSF22A5E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：941K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF22A5E
20V N-Channel MOSFET
Main Product Characteristics:
VDSS
RDS(on)
ID
20V
3Ω
238mA
PinAssignment
SchematicDiagram
Features and Benefits:
LowGateChargeforFast Switching
Small1.6x1.6mm Footprint
ESD ProtectedGate
Leadfreeproduct
150℃operating temperature
Description:
It utilizesthelatesttrenchprocessing techniques toachievefastswitching speed andshortreverserecovery
time. Thesefeaturescombine tomakethisdesign anextremelyefficient andreliable devicefor useinPower
Management Load Switch, LevelShift, CellPhones,MediaPlayers, DigitalCameras, PDA’s, VideoGames,
HandHeldComputers, etc.
Absolute Max Rating @TA=25℃unless otherwise specified
Symbol
ID
Parameter
Max.
238
Units
Continuous Drain Current ①
Pulsed Drain Current (tp≤10μs) ②
Power Dissipation ③
mA
IDM
714
PD
300
mW
V
VDS
VGS
TJ TSTG
TL
Drain-Source Voltage
20
Gate-to-Source Voltage
± 10
-55 to 150
260
V
Operating Junction and Storage Temperature Range
Lead Temperature for Soldering Purposes
Continuous Source Current (Body Diode)
°C
ISD
238
mA
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJA
Junction-to-Ambient (steady-state) ④
416
℃/W
www.goodark.com
Page 1 of 5
Rev.1.0
SSF22A5E
20V N-Channel MOSFET
Electrical Characteristics @TA=25℃unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
VGS = 0V,
ID = 100μA
Drain-to-Source breakdown
voltage
BVDSS
20
—
—
V
—
—
1.5
2.2
3.0
3.5
VGS = 4.5V, ID = 10mA
VGS = 2.5V, ID = 10mA
Static Drain-to-Source
on-resistance
RDS(on)
Ω
VDS = 3V,
ID = 100μA
VDS = 20V,
VGS = 0V
VGS(th)
IDSS
Gate threshold voltage
0.5
—
1.0
—
1.5
1.0
100
V
Drain-to-Source leakage
current
μA
Gate-to-Source forward
leakage
—
—
VGS =10V
IGSS
gFS
μA
mS
ns
Gate-to-Source reverse
leakage
-100
—
—
—
—
VGS = -10V
Forward Transconductance
ID = 10mA,VDS=3V
50
td(on)
tr
Turn-on delay time
Rise time
—
—
—
—
—
—
—
—
—
—
20
15
13
VGS=4.5V, VDS=5V,
ID=10mA, RG=10Ω
15
td(off)
tf
Turn-Off delay time
Fall time
98
60
Ciss
Coss
Input capacitance
Output capacitance
Reverse transfer
capacitance
11.5
10
VGS = 0V,
VDS =5V,
ƒ = 1.0MHz
pF
Crss
—
6.0
3.5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
VSD
Diode Forward Voltage
—
0.66
0.8
V
IS=10mA, VGS=0V
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 2 of 5
Rev.1.0
SSF22A5E
20V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
www.goodark.com
Page 3 of 5
Rev.1.0
SSF22A5E
20V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Test Circuits and Waveforms
Switch Waveforms:
www.goodark.com
Page 4 of 5
Rev.1.0
SSF22A5E
20V N-Channel MOSFET
Mechanical Data(SC-89)：
www.goodark.com
Page 5 of 5
Rev.1.0
相关型号：
SSF22N50A
Power Field-Effect Transistor, 12.4A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
SSF22N50A
Power Field-Effect Transistor, 12.4A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明