SSF2300A_15 [GOOD-ARK]
20V N-Channel MOSFET;
| 型号： | SSF2300A_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2300A
20V N-Channel MOSFET
DESCRIPTION
D
The SSF2300A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS = 20V,ID = 4.5A
RDS(ON) < 50mΩ @ VGS=2.5V
RDS(ON) < 40mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
3000 units
2300A
SSF2300A
SOT-23
Ø180mm
8 mm
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±10
4.5
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
16
A
IDM
Maximum Power Dissipation
1.2
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
140
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Suzhou Goodark Electronics Co., Ltd
Page 1 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
1
μA
nA
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=2.5V, ID=4A
VGS=4.5V, ID=4.5A
VDS=10V,ID=4.5A
0.5
0.7
35
28
8
1.5
50
40
V
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
500
250
90
PF
PF
PF
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
7
nS
nS
nS
nS
nC
nC
nC
VDD=10V, RL = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
Turn-on Rise Time
55
16
10
10
2.3
2.9
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=4.2A,VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Page 2 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
Rl
toff
tf
td(on)
VOUT
VIN
td(off)
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
10%
50%
G
S
50%
10%
PULSE WIDTH
Figure 2: Switching Waveforms
Figure 1: Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Suzhou Goodark Electronics Co., Ltd
Page 3 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs VDS
Figure 9 RDS(ON) vs VGS
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Figure 11 Gate Charge
Suzhou Goodark Electronics Co., Ltd
Page 4 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Page 5 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Dimensions in Millimeters
Symbol
A
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Page 6 of 6
Rev. 2.0
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