SSF2301A_15 [GOOD-ARK]
20V P-Channel MOSFET;
| 型号： | SSF2301A_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2301A
20V P-Channel MOSFET
D
DESCRIPTION
The SSF2301A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS = -20V,ID = -4A
RDS(ON) < 80mΩ @ VGS=-2.5V
RDS(ON) < 65mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOT23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2301A
SSF2301A
SOT23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
V
VGS
-4
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
-20
A
IDM
Maximum Power Dissipation
1.6
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
156
℃/W
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Page 1 of 4
Rev.1.0
SSF2301A
20V P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-20V,VGS=0V
VGS=±12V,VDS=0V
-20
V
-1
μA
nA
IGSS
±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
VDS=-5V,ID=-4A
-0.5
-1
65
80
V
mΩ
S
46
65
7
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
640
180
100
PF
PF
PF
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
27
60
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Qg
Qgs
Qgd
9.6
1.5
2.4
V
DS=-10V,ID=-4A,VGS=-4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF2301A
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
tr
toff
tf
td(on)
td(off)
Rl
Vin
D
Vout
90%
90%
Vgs
Rgen
VOUT
INVERTED
G
10%
90%
10%
50%
S
VIN
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF2301A
20V P-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Dimensions in Millimeters
Symbol
A
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0
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