YG811S04R [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | YG811S04R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(40V / 5A )
YG811S04R (5A)
Outline drawings, mm
SCHOTTKY BARRIER DIODE
+0.2
-0.1
4.5±0.2
10.5±0.5
ø3.2
2.7±0.2
1
2
1.2±0.2
Features
Insulated package by fully molding
0.7±0.2
0.6±0.2
2.7±0.2
Low VF
5.08±0.4
Super high speed switching
High reliability by planer design
JEDEC
EIAJ
SC-67
Applications
High speed power switching
Connection diagram
Maximum ratings and characteristics
1
2
Absolute maximum ratings
Symbol
VRRM
VRSM
Viso
Io
Conditions
Item
Rating
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating viltage
40
48
1500
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
V
Square wave, duty=1/2
Tc=122°C
Average output current
Surge current
5
A
Sine wave
10ms
IFSM
Tj
120
A
-40 to +150
-40 to +150
Operating junction temperature
Storage temperature
°C
°C
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Unit
V
Symbol
VFM
Max.
0.55
5.0
Conditions
IFM=5.0A
Forward voltage drop
Reverse current
VR=VRRM
mA
°C/W
IRRM
Junction to case
Thermal resistance
Rth(j-c)
5.0
Mechanical Characteristics
0.3 to 0.5
2.3
Recommended torque
Mounting torque
Weight
N·m
g
(40V / 5A TO-22OF15)
YG811S04R
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
2
1
0
100
10
10
10
Tj=150°C
Tj=125°C
Tj=100°C
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
-1
10
1
Tj=25°C
-2
10
10
-3
0.1
0
10
20
30
40
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Io
12
360°
DC
λ
VR
10
360°
α
8
Square wave
λ =60°
Square wave
Sine wave
λ =120°
λ =180°
λ =180°
6
4
2
0
α =180°
Square wave
DC
Per 1element
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
5
10
15
20
25
30
35
40
45
50
Io Average Forward Current (A)
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
Current Derating (Io-Tc)
160
150
140
130
120
110
100
DC
1000
Sine wave
λ =180°
λ =180°
Square wave
Square wave
Square wave
λ =120°
360°
λ =60°
λ
Io
VR=30V
90
100
80
1
10
100
0
1
2
3
4
5
6
7
8
Io Average Output Current (A)
:Conduction angle of forward current for each rectifier element
VR Reverse Voltage (V)
λ
Io:Output current of center-tap full wave connection
YG811S04R
(40V / 5A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-3
10-2
10-1
100
101
102
t
Time (sec.)
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