YG811S09R [ETC]

SCHOTTKY BARRIER DIODE; 肖特基二极管
YG811S09R
型号: YG811S09R
厂家: ETC    ETC
描述:

SCHOTTKY BARRIER DIODE
肖特基二极管

肖特基二极管
文件: 总3页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
YG811S09R  
(90V / 5A TO-22OF15)  
Outline Drawings  
SCHOTTKY BARRIER DIODE  
ø3.2 +0.2  
4.5±0.2  
10.5±0.5  
-0.1  
2.7±0.2  
1.2±0.2  
Features  
Low VF  
0.7±0.2  
0.6±0.2  
2.7±0.2  
Super high speed switching.  
High reliability by planer design.  
5.08±0.4  
JEDEC  
EIAJ  
SC-67  
Applications  
High speed power switching.  
Connection Diagram  
3
1
Maximum Ratings and Characteristics  
Absolute Maximum Ratings  
Symbol  
VRRM  
VRSM  
Viso  
Conditions  
Rating  
Item  
Unit  
V
90  
100  
Repetitive peak reverse voltage  
Repetitive peak surge reverse voltage  
Isolating voltage  
tw=500ns, duty=1/40  
V
Terminals to Case,  
AC. 1min.  
1500  
V
duty=1/2, Tc=116°C  
Rectangl wave  
IO  
5
Average output current  
Suege current  
A
IFSM  
Tj  
Sine wave 10ms  
80  
A
-40 to +150  
-40 to +150  
Operating junction temperature  
Storage temperature  
°C  
°C  
Tstg  
Electrical Characteristics (Ta=25°C Unless otherwise specified )  
Item  
Symbol  
VF  
Conditions  
IF=4.0A  
Max.  
0.9  
Unit  
V
Forward voltage drop  
Reverse current  
IR  
VR=VRRM  
5.0  
mA  
°C/W  
Thermal resistance  
Mechanical Characteristics  
Rth(j-c)  
Junction to case  
5.0  
N · m  
g
0.3 to 0.5  
2.3  
Recommended torque  
Mounting torque  
Weight  
A-348  
(90V / 5A TO-22OF15)  
Characteristics  
YG811S09R  
Reverse Characteristic (typ.)  
Forward Characteristic (typ.)  
102  
101  
100  
10-1  
10-2  
10-3  
Tj=150oC  
Tj=125oC  
10  
o C  
Tj=150  
Tj=100oC  
Tj=125 o C  
o C  
Tj=100  
Tj=25 o C  
1
Tj=25oC  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
10 20 30 40 50 60 70 80 90 100 110  
VF Forward Voltage (V)  
VR  
Reverse Voltage (V)  
Reverse Power Dissipation  
Forward Power Dissipation  
8
7
6
5
4
3
2
1
0
20  
18  
16  
14  
12  
10  
8
DC  
Io  
360°  
λ
VR  
360°  
α
Square wave λ=60o  
Square wave λ=120o  
Sine wave λ=180o  
α=180o  
Square wave λ=180o  
DC  
6
4
2
Per 1element  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Io Average Forward Current (A)  
VR  
Reverse Voltage (V)  
Junction Capacitance Characteristic  
(typ.)  
Current Derating (Io-Tc)  
1000  
100  
10  
160  
150  
140  
130  
120  
110  
100  
90  
DC  
Sine wave =180o  
Square wave =180o  
λ
λ
Square wave =120o  
λ
360°  
Square wave =60o  
λ
λ
Io  
VR=50V  
80  
70  
10  
100  
0
1
2
3
4
5
6
7
8
Io  
Average Output Current  
(A)  
VR  
Reverse Voltage (V)  
:Conduction angle of forward current for each rectifier element  
λ
Io:Output current of center-tap full wave connection  
YG811S09R  
(90V / 5A TO-22OF15)  
Surge Capability  
1000  
100  
10  
1
10  
100  
Number of Cycles at 50Hz  
Transient Thermal Impedance  
102  
101  
100  
10-1  
10-3  
10-2  
10-1  
100  
101  
102  
t
Time (sec.)  

相关型号:

YG812S04R

Schottky Barrier Diode
FUJI

YG831C03R

SCHOTTKY BARRIER DIODE
FUJI

YG831C04R

SCHOTTKY BARRIER DIODE
FUJI

YG832C03R

SCHOTTKY BARRIER DIODE
FUJI

YG832C04R

SCHOTTKY BARRIER DIODE
FUJI

YG835C03R

SCHOTTKY BARRIER DIODE
FUJI

YG835C03R_01

SCHOTTKY BARRIER DIODE
FUJI

YG835C04R

SCHOTTKY BARRIER DIODE
FUJI

YG838C03R

SCHOTTKY BARRIER DIODE
FUJI

YG838C04R

SCHOTTKY BARRIER DIODE
FUJI

YG852C12R

Schottky Barrier Diode
FUJI

YG852C15R

Schottky Barrier Diode
FUJI