YG831C03R [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | YG831C03R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG831C03R
(30V / 5A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
10±0.5
1.2±0.2
0.6 +-00.2
2.7±0.2
0.7±0.2
Features
2.54±0.2
Low VF
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
Item
Unit
V
30
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
35 *1
1500
5*
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
V
duty=1/2, Tc=130°C
Square wave
IO
Average output current
Surge current
A
IFSM
Tj
Sine wave 10ms
100
A
+150
Operating junction temperature
Storage temperature
°C
°C
Tstg
-40 to +150
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
*1 : Tentative
Item
Unit
V
Symbol
VF
Conditions
IF=2.0A
Max.
Forward voltage drop **
Reverse current **
Thermal resistance
0.45
5.0
mA
IR
VR=VRRM
°C/W
Rth(j-c)
Junction to case
5.0
**Rating per element
Mechanical Characteristics
N · m
g
0.3 to 0.5
2.3
Recommended torque
Mounting torque
Weight
(30V / 5A TO-22OF15)
Characteristics
YG831C03R
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
102
101
100
10-1
10-2
10-3
Tj=150 oC
Tj=125 oC
Tj=100 oC
10
1
Tj=150 o
Tj=125 o
Tj=100 o
Tj=25 o
C
C
C
C
Tj=25 o
C
0.1
0.01
0
5
10
15
20
25
30
35
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Io
360°
DC
VR
λ
360°
α
Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
Square wave λ=180o
DC
α=180o
Per 1element
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Io Average Forward Current (A)
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
160
155
150
145
140
135
130
125
120
115
110
105
100
1000
100
10
DC
Sine wave λ=180o
Square wave λ=180o
Square wave λ=120o
Square wave λ=60o
360°
λ
Io
VR=20V
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Io
Average Output Current (A)
VR
Reverse Voltage (V)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG831C03R
(30V / 5A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-3
10-2
10-1
100
101
102
t
Time (sec.)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
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