YG803C06 [FUJI]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220F, 3 PIN;
| 型号： | YG803C06 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220F, 3 PIN 局域网 二极管 |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(60V / 15A )
YG803C06 (15A)
Schottky barrier diode
Outline drawings, mm
TO-220F
Major characteristics
Characteristics YG803C06 Units Condition
VRRM
VF
60
0.48
15
V
V
A
Tj=125°C, typ
IO
Features
Applications
Low VF
High frequency operation
DC-DCconverters
AC adapter
Optimized for 3.3V
Connection diagram
5V output application
Center tap connection
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Symbol
VRSM
VRRM
Viso
Io
Item
Conditions
Rating
60
Unit
V
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
tw=500ns, duty=1/40
60
V
Terminals-to-Case,
AC.1min
1500
15
V
Square wave, duty=1/2
Tc=94°C
*
Average output current
A
Sine wave
10ms, 1shot
IFSM
Tj
Non-repetitive surge current
Operating junction temperature
Storage temperature
100
+150
A
°C
°C
-40 to +150
Tstg
* Average output current at centertap full wave connection
Electrical characteristics (Tc=25°C Unless otherwise specified )
Unit
Item
Symbol
Max.
Conditions
IFM=6A
V
Forward voltage drop
Reverse current
VF
IR
0.58
mA
VR=VRRM
5.0
Electrical characteristics (Tc=25°C Unless otherwise specified )
Condition
Item
Symbol
Max.
3.0
Unit
Junction to case
Thermal resistance
Rth(j-c)
°C/W
(60V / 15A )
YG803C06 (15A)
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
100
10
1
102
101
100
10-1
10-2
10-3
Tj=150°C
Tj=125°C
Tj=100°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Tj=25°C
0.1
0.0
0
10
20
30
40
50
60
70
0.2
0.4
0.6
0.8
1.0
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
10
8
10
8
Io
360°
DC
λ
VR
360°
α
6
6
Square wave λ=60°
Square wave λ=120°
α =180°C
Sine wave λ=180°
Square wave λ=180°
4
4
DC
2
2
Per 1element
0
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
60
70
IO Average Forward Current (A)
VR Reverse Voltage (V)
Current Derating (Io-Tc)
Junction Capacitance Characteristic(typ.)
160
150
140
130
120
110
100
90
1000
100
10
DC
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
80
360°
Square wave λ=60°
λ
Io
70
VR=30V
60
50
0
2
4
6
8
10
12
14
10
100
VR Reverse Voltage (V)
Io Average Output Current (A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG803C06 (15A)
(60V / 15A )
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-2
10-1
100
101
102
T
Time (s)
相关型号：
YG805C010R
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, SC-67, TO-220F15, 3 PIN
FUJI
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