2SK3651-01R [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET![2SK3651-01R](http://pdffile.icpdf.com/pdf1/p00108/img/icpdf/2SK3651-01R_588161_icpdf.jpg)
型号: | 2SK3651-01R |
厂家: | ![]() |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SK3651-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
200
Unit
V
Drain-source voltage
V
VDSX *5
ID
220
±25
±100
±30
25
A
Continuous drain current
Pulsed drain current
Gate-source voltage
A
Equivalent circuit schematic
ID(puls]
VGS
V
A
Non-repetitive Avalanche current IAS *2
Drain(D)
mJ
kV/µs
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
372
20
kV/µs
W
5
°C
°C
3.10
Gate(G)
85
+150
-55 to +150
Operating and storage
temperature range
Isolation voltage
Tch
°C
Source(S)
Tstg
°C
VISO *6
2
kVrms
<
<
<
<
*1 L=1mH, Vcc=48V
*2 Tch 150°C
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
<
*4 VDS 250V
*5 VGS=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
V
250
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=250V VGS=0V
VDS=200V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
100
VDS=0V
IGSS
RDS(on)
gfs
VGS=±30V
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
10
75
ID=12.5A VGS=10V
mΩ
S
ID=12.5A VDS=25V
VDS=75V
8
16
Ciss
Coss
Crss
td(on)
tr
pF
2000
400
25
3000
600
38
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=72V ID=12.5A
20
30
30
45
VGS=10V
td(off)
tf
60
90
Turn-off time toff
RGS=10 Ω
20
30
VCC=72V
44
66
QG
nC
Total Gate Charge
14
21
ID=12A
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
16
24
VGS=10V
25
L=100µH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
1.65
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
V
0.45
1.5
trr
Qrr
µs
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
Rth(ch-c)
channel to case
1.471
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
40.0
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3651-01R
FUJI POWER MOSFET
Characteristics
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=25A
Allowable Power Dissipation
PD=f(Tc)
500
400
300
200
100
0
120
100
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
starting Tch [°C]
Tc [°C]
Typical Output Characteristics
Typical Transfer Characteristic
ID=f(VDS):80µs Pulse test,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
80
60
40
20
0
100
10
1
20V
10V
8V
7.5V
7.0V
6.5V
6.0V
0.1
VGS=5.5V
12
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
0.20
0.15
0.10
0.05
0.00
100
10
1
VGS=
6.0V
5.5V
6.5V
7.0V
7.5V
8V
10V
20V
0.1
0.1
1
10
100
0
20
40
60
ID [A]
80
100
ID [A]
2
2SK3651-01R
FUJI POWER MOSFET
Drain-Source On-state Resistance
Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=12.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=1mA
270
240
210
180
150
120
90
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
max.
typ.
60
30
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
Tch [°C]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A, Tch=25°C
101
100
10-1
10-2
14
12
10
8
Ciss
Vcc= 36V
72V
96V
Coss
6
4
2
Crss
102
0
10-1
100
101
0
10
20
30
40
50
60
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
103
102
101
100
100
10
1
tf
td(off)
tr
td(on)
0.1
10-1
100
101
102
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
ID [A]
3
2SK3651-01R
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
4
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