2SK3652 [KEXIN]
N-channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | 2SK3652 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | N-channel Enhancement Mode MOSFET |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
N-channel Enhancement Mode MOSFET
2SK3652
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Low on-resistance, low Qg
High avalanche resistance
For high-speed switching
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
Unit
V
230
30
V
50
A
Peak drain current
IDP
200
2 200
3
A
Avalanche energy capability *
Power dissipation Ta = 25
Power dissipation
EAS
mJ
PD
W
100
150
Channel temperature
Tch
Storage temperature
Tstg
-55 to +150
* L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25
1
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SMD Type
Transistors
2SK3652
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID = 1 mA, VGS = 0
Min
230
2
Typ
Max
Unit
V
Gate-drain surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Turn-on delay time
VDSS
Vth
VDS = 25 V, ID = 10 mA
VDS = 184 V, VGS = 0
VGS = 30 V, VDS = 0
4
100
1
V
IDSS
IGSS
ìA
ìA
mÙ
S
RDS(on) VGS = 10 V, ID = 25 A
29
35
40
VDS = 25 V, ID = 25 A
17
Yfs
Ciss
Coss
Crss
td(on)
tr
5 950
850
80
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25 V, VGS = 0, f = 1 MHz
65
Rise time
140
470
145
VDD = 100 V, ID = 25 A,RL = 4 Ù,
VGS = 10 V
Turn-off delay time
td(off)
tf
VDSF
trr
Fall time
Diode foward voltage
IDR = 50 A, VGS = 0
-1.5
Reverse recovery time
Reverse recovery charge
Total gate charge
L = 230 ìH, VDD = 100 V
IDR = 25 A, di/dt = 100 A/ìs
235
1 180
105
40
ns
nC
nC
nC
nC
/W
/W
Qrr
Qg
VDD = 100 V, ID = 25 A,VGS = 10 V
Gate-source charge
Qgs
Gate-drain charge
Qgd
Rth(ch-c)
Rth(ch-a)
14
Channel-case heat resistance
Channel-atmosphere heat resistance
1.25
41.6
2
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