2SK3653 [NEC]
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3;
| 型号： | 2SK3653 |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SK3653 is suitable for converter of ECM.
0.3 ±0.05
0.13 +–00..015
FEATURES
• Compact package
0~0.05
G
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
• Includes diode and high resistance at G - S
D
S
0.9
1.4 ±0.1
ORDERING INFORMATION
MAX. 0.4
PART NUMBER
2SK3653
PACKAGE
3pinXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
+0.1
–0
0.2
Drain to Source Voltage Note1
VDSX
20
–20
10
V
V
Gate to Drain Voltage
Drain Current
VGDO
ID
EQUIVALENT CIRCUIT
mA
mA
mW
°C
Gate Current
IG
10
Total Power Dissipation Note2
Junction Temperature
Storage Temperature
Drain
PT
Tj
80
125
Gate
Tstg
–55 to +125 °C
Source
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published June 2002 NS CP(K)
Printed in Japan
D16293EJ1V0DS00 (1st edition)
2002
©
2SK3653
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
IDSS1
TEST CONDITIONS
VDS = 2.0 V, VGS = 0 V
MIN. TYP. MAX. UNIT
38
40
570
600
−1.0
µA
µA
V
IDSS2
VDS = 5.0 V, VGS = 0 V
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 5.0 V, ID = 1.0 µA
−0.1
350
350
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
See Test Circuit
µS
µS
pF
µV
7.0
1.8
8.0
3.0
Noise Voltage
NV
IDSS RANK
MARKING
J2
J3
J4
J5
J6
J7
IDSS1 (µA)
38 to 65
56 to 105
85 to 170
140 to 280
185 to 425
280 to 570
VDS = 2.0 V
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
JIS A
NV (r.m.s)
R = 1 kΩ
C = 10 pF
2
Data Sheet D16293EJ1V0DS
2SK3653
TYPICAL CHARACTERISTICS (TA = 25°C)
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DERATING FACTOR OF
POWER DISSIPATION
40
30
100
80
20
10
µ
−1.0 −0.8 −0.6 −0.4 −0.2
0
60
0.2 0.4 0.6 0.8 1.0
−10
−20
−30
−40
40
20
0
0
20
40 60
80 100 120 140 160
VGS - Gate to Source Voltage - V
TA - Ambient Temperature - ˚C
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
50
1
0.8
0.6
0.4
0.2
V
DS = 0 V
V
DS = 5.0 V
f = 1.0 MHz
µ
A
20
10
5
µ
I
µ
S
D
1
2
1
1
2
5
10
20
50
100
−0.6
−0.4
−0.2
0
+0.2
V
DS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE
VOLTAGE DRAIN CURRENT CO-RELATION
10
VDS = 5.0 V
µ
5
2
1
|yfs
|
0.5
0.2
0.1
VGS (off)
0.05
0.02
0.01
10
20
50
100
200
500 1000
µ
Zero-Gate Voltage Drain Current -
A
3
Data Sheet D16293EJ1V0DS
2SK3653
DRAIN CURRENT vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE VOLTAGE
RANK: J2
RANK: J3
0.15 V
250
200
150
100
50
300
240
180
120
60
0.15 V
µ
µ
0.10 V
0.05 V
0.10 V
0.05 V
V
GS = 0 V
V
GS = 0 V
−0.15 V
−0.05 V
−0.10 V
−0.15 V
−0.05 V
−0.10 V
0
0
0
0
0
2
4
6
8
10
10
10
0
2
4
6
8
10
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J5
RANK: J4
500
400
300
200
100
0
400
320
240
160
80
0.15 V
0.10 V
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
V
GS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0.15 V
−0.15 V
0
0
2
4
6
8
10
2
4
6
8
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J6
RANK: J7
0.15 V
0.10 V
700
560
420
280
140
0
900
720
540
360
180
0
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
VGS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0.15 V
−0.15 V
2
4
6
8
0
2
4
6
8
10
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D16293EJ1V0DS
2SK3653
[MEMO]
5
Data Sheet D16293EJ1V0DS
2SK3653
•
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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•
•
•
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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M8E 00. 4
相关型号：
2SK3653-A
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3
NEC
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