2SK3579-01MR [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3579-01MR |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3579-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
TO-220F
Features
Applications
Switching regulators
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
150
Unit
V
Drain-source voltage
VDSX *5
ID
130
±23
±96
±20
23
V
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
A
EAS*1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
242
20
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
5
Drain(D)
°C
°C
2.1
40
+150
-55 to +150
2
Operating and storage
temperature range
Isolation Voltage
°C
°C
Tstg
VISO *6
<
kVrms
<
Gate(G)
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
Source(S)
<
*4 VDS 250V *5 VGS=-20V *6 t=60sec f=60Hz
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
V
Drain-source breakdown voltaget
Gate threshold voltage
ID=250 A
VGS=0V
VDS=VGS
150
µ
V
ID= 250 A
1.0
2.5
µA
Tch=25°C
VDS=150V VGS=0V
VDS=120V VGS=0V
25
Zero gate voltage drain current
IDSS
Tch=125°C
250
nA
IGSS
Gate-source leakage current
VDS=0V
VGS=±20V
ID=11.5A
10
65
100
RDS(on)
Drain-source on-state resistance
mΩ
VGS=10V
90
S
gfs
Forward transcondutance
Input capacitance
ID=11.5A VDS=25V
VDS=75V
12
24
1470
190
18
Ciss
Coss
Crss
td(on)
tr
pF
2200
Output capacitance
VGS=0V
285
27
Reverse transfer capacitance
Turn-on time ton
f=1MHz
ns
36
24
VCC=48V ID=11.5A
VGS=10V
23
35
450
68
td(off)
tf
Turn-off time toff
300
45
RGS=10 Ω
nC
72
QG
Total Gate Charge
VCC=48V
ID=23A
48
QGS
QGD
Gate-Source Charge
Gate-Drain Charge
6
9
VGS=10V
12
18
Rg
∆Rg/∆Τch
Gate-Internal Resistance
(Tep.Confficient)
23.3
23
39
54.4
Ω
%/°C
0.12
µ
A
V
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=100 H Tch=25°C
IAV
1.10
0.13
0.6
1.65
VSD
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
µs
µC
trr
Qrr
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
Rth(ch-c)
channel to case
3.125
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
2SK3579-01MR
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
50
45
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
10V
20V
5.0V
8V
4.5V
4.0V
VGS=3.5V
0
0
0
25
50
75
100
125
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
0.16
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VGS=
3.5V
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
4.0V
4.5V
5V
8V
10V
20V
max.
typ.
0
10
20
30
40
50
-50
-25
0
25
50
75
100 125 150
ID [A]
Tch [°C]
2
2SK3579-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A, Tch=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
24
22
20
18
16
14
12
10
8
Vcc= 48V
max.
min.
6
4
2
0
-50
-25
0
25
50
75
100 125 150
0
10 20 30 40 50 60 70 80 90 100
Qg [nC]
Tch [°C]
Typical Capacitance
Typical Forward Characteristics of Reverse Diode
C=f(VDS):VGS=0V,f=1MHz
IF=f(VSD):80µs Pulse test,Tch=25°C
101
100
10-1
10-2
100
10
1
Ciss
VGS=10V
VGS=0V
Coss
Crss
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
VDS [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=23A
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
102
101
100
300
250
200
150
100
50
tf
td(off)
td(on)
tr
0
0
25
50
75
100
125
150
10-1
100
101
102
starting Tch [°C]
ID [A]
3
2SK3579-01MR
FUJI POWER MOSFET
Gate-Internal Resistance vs. Tch
RG=f(Tch):f=1MHz,VDS=0V
80
70
60
50
40
30
20
10
0
max.
Typ.
min.
-50
-25
0
25
50
75
100 125 150
Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
tAV [sec]
10-4
10-3
10-2
Transient Thermal impedance
Zth(ch-c)=f(t) :D=0
101
100
10-1
10-2
10-5
10-4
10-3
10-2
t [s]
10-1
100
101
4
相关型号：
2SK358
TRANSISTOR 5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
TOSHIBA
2SK3582MFV-A
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3582TK-A
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3582TK-B
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明