2SK3516-01L [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3516-01L |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3516-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
450
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±8
±32
±30
8
A
ID(puls]
VGS
V
Drain(D)
A
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
193
20
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
1.67
Source(S)
Tc=25
65
+150
-55 to +150
Operating and storage
temperature range
Tch
Tstg
<
°C
°C
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=5.53mH, Vcc=45V *2 Tch 150°C
=
=
=
=
<
*4 VDS 450V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
450
V
µ
ID= 250 A
VDS=VGS
3.0
5.0
25
V
Tch=25°C
µA
VDS=450V VGS=0V
VDS=360V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=0V
IGSS
RDS(on)
gfs
VGS=±30V
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=4A VGS=10V
0.50
0.65
Ω
4
8
800
120
S
ID=4A VDS=25V
VDS=25V
Ciss
1200
150
7
pF
VGS=0V
Coss
Crss
td(on)
tr
Output capacitance
f=1MHz
4.5
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=4A
VGS=10V
15
12
25
7
23
18
38
td(off)
tf
Turn-off time toff
RGS=10 Ω
11
VCC=225V
ID=8A
22
33
QG
nC
Total Gate Charge
9.5
14.5
10
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
6.5
VGS=10V
8
L=5.53mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.00
0.7
1.50
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
V
µs
µC
3.5
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.92
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
2SK3516-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
80
70
60
50
40
30
20
10
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tc [°C]
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
28
26
24
22
20
18
16
14
12
10
8
10
20V
10V
8V
1
7.5V
7.0V
6
4
VGS=6.5V
0.1
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Typical Drain-Source on-state Resistance
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
100
10
1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5V
VGS=6.5V
7.0V
8V
10V
20V
0.1
0.1
1
10
0
5
10
15
20
25
ID [A]
ID [A]
2
2SK3516-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
VGS(th)=f(Tch):VDS=VGS,ID=250µA
RDS(on)=f(Tch):ID=4A,VGS=10V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
max.
min.
max.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=8A, Tch=25°C
10n
1n
24
22
20
18
16
14
12
10
8
Vcc= 90V
Ciss
225V
360V
100p
10p
1p
Coss
Crss
6
4
2
0
10-1
100
101
102
103
0
10
20
30
40
50
60
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
100
10
1
102
101
100
tr
td(off)
td(on)
tf
0.1
100
101
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
ID [A]
3
2SK3516-01L,S,SJ
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=45V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Outline Drawings (mm)
Type(S)
Type(L)
Type(SJ)
See Note: 1.
See Note: 1.
Trademark
4
See Note: 1.
Trademark
Fig. 1.
Fig. 1.
Trademark
Lot No.
Lot No.
Lot No.
Type name
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
CONNECTION
1
2
3
GATE
GATE
1
2
3
4
DRAIN
SOURCE
DRAIN
SOURCE
4
Solder Plating
Solder Plating
Pre-Solder
CONNECTION
Pre-Solder
Notes
Notes
1
2
3
GATE
1. ( ) : Reference dimensions.
1. ( ) : Reference dimensions.
1
2
3
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Note: 1. Guaranteed mark of
avalanche ruggedness.
DRAIN
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
SOURCE
Note: 1. Guaranteed mark of
avalanche ruggedness.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4
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