2SK3516-01L [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
2SK3516-01L
型号: 2SK3516-01L
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

N-CHANNEL SILICON POWER MOSFET
N沟道硅功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件: 总4页 (文件大小:118K)
中文:  中文翻译
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2SK3516-01L,S,SJ  
FUJI POWER MOSFET  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings  
Super FAP-G Series  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
P4  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
450  
Unit  
V
Drain-source voltage  
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
Equivalent circuit schematic  
A
ID  
±8  
±32  
±30  
8
A
ID(puls]  
VGS  
V
Drain(D)  
A
IAR  
*2  
*1  
mJ  
kV/µs  
kV/µs  
W
EAS  
193  
20  
dVDS/dt *4  
dV/dt  
*3  
5
Gate(G)  
°C  
°C  
PD Ta=25  
1.67  
Source(S)  
Tc=25  
65  
+150  
-55 to +150  
Operating and storage  
temperature range  
Tch  
Tstg  
<
°C  
°C  
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
*1 L=5.53mH, Vcc=45V *2 Tch 150°C  
=
=
=
=
<
*4 VDS 450V  
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Test Conditions  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
µ
ID= 250 A  
VGS=0V  
Drain-source breakdown voltaget  
Gate threshold voltage  
450  
V
µ
ID= 250 A  
VDS=VGS  
3.0  
5.0  
25  
V
Tch=25°C  
µA  
VDS=450V VGS=0V  
VDS=360V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
VDS=0V  
IGSS  
RDS(on)  
gfs  
VGS=±30V  
10  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=4A VGS=10V  
0.50  
0.65  
4
8
800  
120  
S
ID=4A VDS=25V  
VDS=25V  
Ciss  
1200  
150  
7
pF  
VGS=0V  
Coss  
Crss  
td(on)  
tr  
Output capacitance  
f=1MHz  
4.5  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=300V ID=4A  
VGS=10V  
15  
12  
25  
7
23  
18  
38  
td(off)  
tf  
Turn-off time toff  
RGS=10  
11  
VCC=225V  
ID=8A  
22  
33  
QG  
nC  
Total Gate Charge  
9.5  
14.5  
10  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
6.5  
VGS=10V  
8
L=5.53mH Tch=25°C  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.00  
0.7  
1.50  
IF=8A VGS=0V Tch=25°C  
IF=8A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
VSD  
trr  
Qrr  
V
µs  
µC  
3.5  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
1.92  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
75.0  
°C/W  
1
2SK3516-01L,S,SJ  
FUJI POWER MOSFET  
Characteristics  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A  
Allowable Power Dissipation  
PD=f(Tc)  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
Tc [°C]  
starting Tch [°C]  
Typical Transfer Characteristic  
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C  
Typical Output Characteristics  
ID=f(VDS):80µs Pulse test,Tch=25°C  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
10  
20V  
10V  
8V  
1
7.5V  
7.0V  
6
4
VGS=6.5V  
0.1  
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VDS [V]  
0
1
2
3
4
5
6
7
8
9
10  
VGS[V]  
Typical Drain-Source on-state Resistance  
Typical Transconductance  
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C  
RDS(on)=f(ID):80µs Pulse test, Tch=25°C  
100  
10  
1
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
7.5V  
VGS=6.5V  
7.0V  
8V  
10V  
20V  
0.1  
0.1  
1
10  
0
5
10  
15  
20  
25  
ID [A]  
ID [A]  
2
2SK3516-01L,S,SJ  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
Drain-Source On-state Resistance  
VGS(th)=f(Tch):VDS=VGS,ID=250µA  
RDS(on)=f(Tch):ID=4A,VGS=10V  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
max.  
min.  
max.  
typ.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
Tch [°C]  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=8A, Tch=25°C  
10n  
1n  
24  
22  
20  
18  
16  
14  
12  
10  
8
Vcc= 90V  
Ciss  
225V  
360V  
100p  
10p  
1p  
Coss  
Crss  
6
4
2
0
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
Qg [nC]  
VDS [V]  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80µs Pulse test,Tch=25°C  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=300V, VGS=10V, RG=10  
100  
10  
1
102  
101  
100  
tr  
td(off)  
td(on)  
tf  
0.1  
100  
101  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  
VSD [V]  
ID [A]  
3
2SK3516-01L,S,SJ  
FUJI POWER MOSFET  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C. Vcc=45V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Outline Drawings (mm)  
Type(S)  
Type(L)  
Type(SJ)  
See Note: 1.  
See Note: 1.  
Trademark  
4
See Note: 1.  
Trademark  
Fig. 1.  
Fig. 1.  
Trademark  
Lot No.  
Lot No.  
Lot No.  
Type name  
Type name  
Type name  
PRE-SOLDER  
Fig. 1.  
Fig. 1.  
CONNECTION  
CONNECTION  
1
2
3
GATE  
GATE  
1
2
3
4
DRAIN  
SOURCE  
DRAIN  
SOURCE  
4
Solder Plating  
Solder Plating  
Pre-Solder  
CONNECTION  
Pre-Solder  
Notes  
Notes  
1
2
3
GATE  
1. ( ) : Reference dimensions.  
1. ( ) : Reference dimensions.  
1
2
3
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
DRAIN  
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
SOURCE  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
Note: 1. Guaranteed mark of avalanche ruggedness.  
DIMENSIONS ARE IN MILLIMETERS.  
4

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