2SK3520-01MR [FUJI]

N CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
2SK3520-01MR
型号: 2SK3520-01MR
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

N CHANNEL SILICON POWER MOSFET
N沟道硅功率MOSFET

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中文:  中文翻译
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FUJI POWER MOSFET  
2SK3520-01MR  
Super FAP-G Series  
2SK3520-01MR  
FUJI POWER MOSFET  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings  
TO-220F  
Features  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=t/T  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
101  
100  
D=0.5  
0.2  
0.1  
0.05  
10-1  
10-2  
10-3  
0.02  
0.01  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
t
t
0
D=  
T
T
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Item  
Symbol  
VDS  
Ratings  
500  
Unit  
V
t [sec]  
Drain-source voltage  
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
Equivalent circuit schematic  
ID  
±8  
±32  
±30  
8
A
ID(puls]  
VGS  
A
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C. Vcc=50V  
V
Drain(D)  
102  
101  
100  
10-1  
10-2  
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
IAR  
*2  
*1  
A
EAS  
173  
20  
mJ  
kV/µs  
kV/µs  
W
dVDS/dt *4  
dV/dt  
PD Ta=25  
Single Pulse  
*3  
5
Gate(G)  
°C  
°C  
2.16  
Source(S)  
Tc=25  
35  
+150  
Operating and storage  
temperature range  
Tch  
°C  
°C  
-55 to +150  
Tstg  
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
*1 L=4.98mH, Vcc=50V *2 Tch 150°C  
=
=
=
=
<
*4 VDS 500V  
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
Drain-source breakdown voltaget  
Gate threshold voltage  
V
500  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
ID= 250 A  
VDS=VGS  
µ
V
3.0  
5.0  
25  
tAV [sec]  
Tch=25°C  
Tch=125°C  
µA  
VDS=500V VGS=0V  
VDS=400V VGS=0V  
Zero gate voltage drain current  
IDSS  
250  
100  
IGSS  
RDS(on)  
gfs  
VDS=0V  
VGS=±30V  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
10  
nA  
ID=4A VGS=10V  
0.65  
0.85  
3.5  
7
750  
100  
S
ID=4A VDS=25V  
VDS=25V  
Ciss  
1130  
150  
pF  
Coss  
Crss  
td(on)  
tr  
VGS=0V  
Output capacitance  
f=1MHz  
4.0  
6.0  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=300V ID=4A  
14  
9
21  
14  
36  
9
VGS=10V  
24  
6
td(off)  
tf  
Turn-off time toff  
RGS=10  
20  
30  
13  
QG  
QGS  
QGD  
IAV  
VCC=250V  
Total Gate Charge  
nC  
8.5  
ID=8A  
Gate-Source Charge  
Gate-Drain Charge  
5.5  
8.5  
VGS=10V  
8
L=4.98mH Tch=25°C  
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
A
1.00  
0.65  
3.5  
1.50  
VSD  
trr  
Qrr  
IF=8A VGS=0V Tch=25°C  
IF=8A VGS=0V  
-di/dt=100A/µs  
V
µs  
µC  
Tch=25°C  
富士電機株式会社電子カンパニーꢀパワー半導体事業部  
141-0032ꢀ東京都品川区大崎一丁112号(ゲートシティ大崎イーストタワー)  
Thermalcharacteristics  
Item  
営業統括部ꢀ℡ (03)5435-7152ꢀꢀ  
ꢀ関西支社 半導体営業部ꢀ(06)6455-6467  
九州支社 半導体営業部ꢀ(092)731-7132  
Min.  
Typ.  
Max. Units  
Symbol  
Rth(ch-c)  
Test Conditions  
channel to case  
中部支社 半導体営業部ꢀ(052)234-4482  
3.57  
°C/W  
Thermal resistance  
URL http://www.fujielectric.co.jp/denshi/scd  
Rth(ch-a)  
channel to ambient  
58.0  
°C/W  
2SK3520-01MR  
2SK3520-01MR  
FUJI POWER MOSFET  
FUJI POWER MOSFET  
Characteristics  
Allowable Power Dissipation  
PD=f(Tc)  
Gate Threshold Voltage vs. Tch  
VGS(th)=f(Tch):VDS=VGS,ID=1mA  
Typical Output Characteristics  
ID=f(VDS):80µs Pulse test,Tch=25°C  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=8A, Tch=25°C  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
24  
22  
20  
18  
16  
14  
12  
10  
8
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
20V  
10V  
8V  
Vcc= 100V  
250V  
max.  
typ.  
400V  
7.5V  
min.  
7.0V  
6
6
4
4
VGS=6.5V  
2
2
0
0
0
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VDS [V]  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
Tch [°C]  
Tc [°C]  
Qg [nC]  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
Typical Transfer Characteristic  
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C  
Typical Transconductance  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80µs Pulse test,Tch=25°C  
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C  
10n  
1n  
100  
10  
1
100  
10  
1
Ciss  
10  
100p  
10p  
1p  
Coss  
Crss  
1
0.1  
0.1  
0.1  
0
1
2
3
4
5
6
7
8
0.1  
1
10  
10-1  
100  
101  
102  
103  
9
10  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  
VGS[V]  
VDS [V]  
VSD [V]  
ID [A]  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80µs Pulse test, Tch=25°C  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=4A,VGS=10V  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=300V, VGS=10V, RG=10  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
300  
VGS=6.5V 7.0V  
7.5V  
2.0  
1.5  
1.0  
0.5  
0.0  
250  
200  
150  
100  
50  
102  
101  
100  
tr  
8V  
10V  
20V  
td(off)  
td(on)  
max.  
tf  
typ.  
0
100  
101  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
ID [A]  
Tch [°C]  
starting Tch [°C]  
ID [A]  

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