2SK3520-01MR [FUJI]
N CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3520-01MR |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N CHANNEL SILICON POWER MOSFET |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJI POWER MOSFET
2SK3520-01MR
Super FAP-G Series
2SK3520-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Features
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
101
100
D=0.5
0.2
0.1
0.05
10-1
10-2
10-3
0.02
0.01
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
t
t
0
D=
T
T
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
10-6
10-5
10-4
10-3
10-2
10-1
100
Item
Symbol
VDS
Ratings
500
Unit
V
t [sec]
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Equivalent circuit schematic
ID
±8
±32
±30
8
A
ID(puls]
VGS
A
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=50V
V
Drain(D)
102
101
100
10-1
10-2
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
A
EAS
173
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt
PD Ta=25
Single Pulse
*3
5
Gate(G)
°C
°C
2.16
Source(S)
Tc=25
35
+150
Operating and storage
temperature range
Tch
°C
°C
-55 to +150
Tstg
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=4.98mH, Vcc=50V *2 Tch 150°C
=
=
=
=
<
*4 VDS 500V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
V
500
10-8
10-7
10-6
10-5
10-4
10-3
10-2
ID= 250 A
VDS=VGS
µ
V
3.0
5.0
25
tAV [sec]
Tch=25°C
Tch=125°C
µA
VDS=500V VGS=0V
VDS=400V VGS=0V
Zero gate voltage drain current
IDSS
250
100
IGSS
RDS(on)
gfs
VDS=0V
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
10
nA
Ω
ID=4A VGS=10V
0.65
0.85
3.5
7
750
100
S
ID=4A VDS=25V
VDS=25V
Ciss
1130
150
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
4.0
6.0
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=4A
14
9
21
14
36
9
VGS=10V
24
6
td(off)
tf
Turn-off time toff
RGS=10 Ω
20
30
13
QG
QGS
QGD
IAV
VCC=250V
Total Gate Charge
nC
8.5
ID=8A
Gate-Source Charge
Gate-Drain Charge
5.5
8.5
VGS=10V
8
L=4.98mH Tch=25°C
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
A
1.00
0.65
3.5
1.50
VSD
trr
Qrr
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs
V
µs
µC
Tch=25°C
富士電機株式会社ꢀ電子カンパニーꢀパワー半導体事業部
〒141-0032ꢀ東京都品川区大崎一丁目11番２号（ゲートシティ大崎イーストタワー）
Thermalcharacteristics
Item
営業統括部ꢀ℡ (03)5435-7152ꢀꢀ
ꢀ関西支社 半導体営業部ꢀ(06)6455-6467
九州支社 半導体営業部ꢀ(092)731-7132
Min.
Typ.
Max. Units
Symbol
Rth(ch-c)
Test Conditions
channel to case
中部支社 半導体営業部ꢀ(052)234-4482
3.57
°C/W
Thermal resistance
URL http://www.fujielectric.co.jp/denshi/scd
Rth(ch-a)
channel to ambient
58.0
°C/W
2SK3520-01MR
2SK3520-01MR
FUJI POWER MOSFET
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
Typical Gate Charge Characteristics
VGS=f(Qg):ID=8A, Tch=25°C
50
45
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20V
10V
8V
Vcc= 100V
250V
max.
typ.
400V
7.5V
min.
7.0V
6
6
4
4
VGS=6.5V
2
2
0
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Tch [°C]
Tc [°C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10n
1n
100
10
1
100
10
1
Ciss
10
100p
10p
1p
Coss
Crss
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
0.1
1
10
10-1
100
101
102
103
9
10
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS[V]
VDS [V]
VSD [V]
ID [A]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
VGS=6.5V 7.0V
7.5V
2.0
1.5
1.0
0.5
0.0
250
200
150
100
50
102
101
100
tr
8V
10V
20V
td(off)
td(on)
max.
tf
typ.
0
100
101
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ID [A]
Tch [°C]
starting Tch [°C]
ID [A]
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