2SK3517-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET![2SK3517-01](http://pdffile.icpdf.com/pdf1/p00165/img/icpdf/2SK35_925091_icpdf.jpg)
型号: | 2SK3517-01 |
厂家: | ![]() |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FUJI POWER MOSFET200303
2SK3517-01
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
500
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±6
±24
±30
6
A
ID(puls]
VGS
V
Drain(D)
A
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
115
20
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
2.02
Source(S)
90
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 500V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
ID= 250 A
VGS=0V
VDS=VGS
500
V
µ
ID= 250 A
3.0
5.0
25
V
µA
Tch=25°C
Tch=125°C
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
250
100
VDS=400V VGS=0V
VGS=±30V
VDS=0V
ID=3A VGS=10V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.15
1.50
Ω
2.5
5
430
60
S
ID=3A VDS=25V
VDS=25V
Ciss
675
90
pF
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
2.5
4.5
15
7.5
30
7.5
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=3A
ns
10
5
VGS=10V
20
5
td(off)
tf
Turn-off time toff
RGS=10 Ω
15
22.5
10.5
4.5
QG
nC
Total Gate Charge
VCC=250V
ID=6A
6.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
2.5
VGS=10V
6
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=5.9mH Tch=25°C
1.00
0.5
1.50
VSD
trr
Qrr
V
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
Tch=25°C
µs
µC
1.7
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.39
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
2SK3517-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
10
9
8
7
6
5
4
3
2
1
0
100
80
60
40
20
0
20V
10V
7.0V
6.5V
6.0V
VGS=5.5V
0
25
50
75
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0.1
0.01
0.01
0.1
1
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0V
VGS=5.5V
6.5V
7.0V
10V
20V
max.
typ.
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [°C]
2
2SK3517-01
FUJI POWER MOSFET
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
20
18
16
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
Vcc= 100V
250V
400V
6
4
2
0
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
10n
1n
Ciss
100p
10p
1p
Coss
Crss
0.1
10-1
100
101
102
103
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
VDS [V]
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=50V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
500
400
300
200
100
0
102
101
100
tf
IAS=2.4A
td(off)
td(on)
tr
IAS=3.6A
IAS=6A
0
25
50
75
100
125
150
10-1
100
101
102
starting Tch [°C]
ID [A]
3
2SK3517-01
FUJI POWER MOSFET
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=50V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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