2SK3513-01S [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3513-01S |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3513-01L,S,SJ
200303
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±12
±48
±30
12
A
ID(puls]
VGS
V
Drain(D)
A
IAR *2
mJ
kV/µs
kV/µs
W
EAS*1
183
20
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
Gate(G)
°C
°C
1.67
Source(S)
195
+150
-55 to +150
<
Operating and storage
temperature range
°C
°C
Tstg
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 600V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
ID=1mA VGS=0V
VDS=VGS
Drain-source breakdown voltaget
Gate threshold voltage
600
V
µ
3.0
5.0
25
V
ID= 250 A
µA
Tch=25°C
VDS=600V VGS=0V
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=5A VGS=10V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
0.58
0.75
Ω
4
8
1200
140
6
S
ID=5A VDS=25V
Ciss
1800
210
9
pF
VDS=25V
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=5A
ns
17
26
15
23
VGS=10V
35
53
td(off)
tf
Turn-off time toff
RGS=10 Ω
7
11
30
45
QG
nC
Total Gate Charge
VCC=250V
ID=10A
11
16.5
15
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
10
VGS=10V
12
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=2.33mH Tch=25°C
1.00
1.50
VSD
trr
Qrr
V
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs
Tch=25°C
0.75
5.0
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.641
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
2SK3513-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=60V
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
IAS=5A
IAS=8A
IAS=12A
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tc [°C]
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
22
20
18
16
14
12
10
8
20V
10V
8V
7.5V
10
7.0V
1
6
VGS=6.5V
4
0.1
2
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.0
1.5
1.0
0.5
0.0
100
10
1
VGS=6.5V
7.0V
7.5V
8V 10V
20V
0.1
0.1
1
10
0
5
10
15
20
ID [A]
ID [A]
2
2SK3513-01L,S,SJ
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
max.
typ.
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
24
22
20
18
16
14
12
10
8
10n
1n
Vcc= 120V
300V
Ciss
480V
100p
10p
1p
Coss
Crss
6
4
2
0
10-1
100
101
102
103
0
10
20
30
40
50
60
70
80
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
100
10
1
102
101
100
tr
td(off)
td(on)
tf
0.1
100
101
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
ID [A]
3
2SK3513-01L,S,SJ
FUJI POWER MOSFET
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current vs Pulse width
IAV=f(tAV):starting Tch=25°C,Vcc=60V
102
01
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2
3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/denshi/scd/
4
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