2MBI300N-060-04B [FUJI]

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2MBI300N-060-04B
型号: 2MBI300N-060-04B
厂家: FUJI ELECTRIC    FUJI ELECTRIC
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IGBT Module  
2MBI300N-060-04  
600V / 300A 2 in one-package  
Features  
· VCE(sat) classified for easy parallel connection  
· High speed switching  
· Voltage drive  
· Low inductance module structure  
Applications  
· Inverter for Motor drive  
· AC and DC Servo drive amplifier  
· Uninterruptible power supply  
· Industrial machines, such as Welding machines  
Equivalent Circuit Schematic  
C2E1  
Maximum ratings and characteristics  
E2  
C1  
Absolute maximum ratings (at Tc=25°C unless otherwise specified)  
Unit  
V
Item  
Symbol  
VCES  
Rating  
¤
Collector-Emitter voltage  
Gate-Emitter voltage  
Collector Continuous  
¤
600  
V
VGES  
±20  
A
IC  
300  
A
current  
1ms  
IC pulse  
-IC  
600  
300  
G1  
E1  
G2  
E2  
A
¤ Current control circuit  
A
1ms  
-IC pulse  
PC  
600  
VCE(sat) classification  
Rank Lenge  
W
Max. power dissipation  
Operating temperature  
Storage temperature  
Isolation voltage  
1100  
°C  
°C  
V
Tj  
Conditions  
+150  
Tstg  
F
1.85 to 2.10V  
2.00 to 2.25V  
2.15 to 2.40V  
2.30 to 2.60V  
2.50 to 2.80V  
-40 to +125  
AC 2500 (1min.)  
3.5  
Vis  
A
B
C
D
Ic = 300A  
VGE = 15V  
Tj = 25°C  
N·m  
N·m  
Screw torque  
Mounting *1  
Terminals *1  
3.5  
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)  
Electrical characteristics (at Tj=25°C unless otherwise specified)  
Item  
Symbol  
Characteristics  
Conditions  
Unit  
Min.  
Typ.  
Max.  
2.0  
30  
7.5  
2.8  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
Collector-Emitter saturation voltage  
Input capacitance  
ICES  
IGES  
VGE(th)  
VCE(sat)  
Cies  
Coes  
Cres  
ton  
VGE=0V, VCE=600V  
VCE=0V, VGE=±20V  
VCE=20V, IC=300mA  
VGE=15V, IC=300A  
VGE=0V  
mA  
µA  
V
4.5  
V
19800  
4400  
2000  
pF  
Output capacitance  
VCE=10V  
Reverse transfer capacitance  
Turn-on time  
f=1MHz  
0.6  
1.2  
0.6  
1.0  
VCC=300V  
µs  
tr  
0.2  
0.6  
0.2  
IC=300A  
Turn-off time  
toff  
VGE=±15V  
tf  
0.35  
RG=6.8ohm  
Diode forward on voltage  
Reverse recovery time  
VF  
3.0  
0.3  
IF=300A, VGE=0V  
IF=300A  
V
trr  
µs  
Thermal resistance characteristics  
Item  
Symbol  
Characteristics  
Conditions  
Unit  
Min.  
Typ.  
Max.  
Rth(j-c)  
Rth(j-c)  
Rth(c-f)*2  
IGBT  
0.11  
°C/W  
°C/W  
°C/W  
Thermal resistance  
Diode  
0.24  
the base to cooling fin  
0.025  
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound  
IGBT Module  
2MBI300N-060-04  
Characteristics (Representative)  
Collector current vs. Collector-Emitter voltage  
Tj=25°C  
Collector current vs. Collector-Emitter voltage  
Tj=125°C  
700  
700  
600  
500  
400  
300  
200  
600  
500  
400  
300  
200  
100  
0
100  
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]  
Collector-Emitter voltage : VCE [V]  
Collector-Emitter vs. Gate-Emitter voltage  
Tj=25°C  
Collector-Emitter vs. Gate-Emitter voltage  
Tj=125°C  
10  
10  
8
6
8
6
4
2
0
4
2
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
Gate-Emitter voltage : VGE [V]  
Gate-Emitter voltage : VGE [V]  
Switching time vs. Collector current  
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=25°C  
Switching time vs. Collector current  
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=125°C  
1000  
100  
10  
1000  
100  
10  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
Collector current : Ic [A]  
Collector current : Ic [A]  
IGBT Module  
2MBI300N-060-04  
Dynamic input characteristics  
Switching time vs. RG  
Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C  
Tj=25°C  
500  
400  
300  
200  
100  
0
25  
20  
15  
10  
1000  
100  
5
0
10  
0
500  
1000  
1500  
1
2
10  
20  
Gate charge : Qg [nC]  
Gate resistance : RG [ohm]  
Reverse recovery characteristics  
trr, Irr, vs. IF  
Forward current vs. Forward voltage  
VGE=0V  
500  
700  
600  
500  
400  
300  
100  
50  
200  
100  
0
0
100  
200  
300  
400  
500  
0
1
2
3
4
Forward current  
:
IF [A]  
Forward voltage  
: VF [V]  
Reversed biased safe operating area  
<
< >  
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 6.8 ohm  
Transient thermal resistance  
3000  
2500  
2000  
1500  
1000  
0.1  
500  
0
0.01  
0
100  
200  
300  
400  
VCE [V]  
500  
600  
0.001  
0.01  
0.1  
: PW [sec.]  
1
Collector-Emitter voltage  
:
Pulse width  
IGBT Module  
2MBI300N-060-04  
Capacitance vs. Collector-Emitter voltage  
Tj=25°C  
Switching loss vs. Collector current  
Vcc=300V, RG=6.8 ohm, VGE=±15V  
100  
10  
1
30  
25  
20  
15  
10  
5
0
0
5
10  
15  
20  
25  
30  
35  
0
100  
200  
300  
Ic [A]  
400  
500  
Collector-Emitter voltage  
:
VCE [V]  
Collector current  
:
Outline Drawings, mm  

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