2MBI300N-120-01A [FUJI]
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7;
| 型号： | 2MBI300N-120-01A |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 晶体 晶体管 功率控制 双极性晶体管 局域网 |
| 文件： | 总4页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Module
2MBI300N-120-01
1200V / 300A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
E2
C1
Item
Symbol
VCES
Unit
V
Rating
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
1200
VGES
V
¤
±20
¤
IC
A
300
current
1ms
IC pulse
-IC
A
600
A
300
600
G1
E1
G2
E2
1ms
-IC pulse
PC
A
¤ Current control circuit
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
W
2100
VCE(sat) classification
Tj
°C
°C
V
+150
Tstg
Rank
Lenge
Conditions
-40 to +125
AC 2500 (1min.)
3.5
Vis
F
A
B
C
D
E
2.25 to 2.50V
2.40 to 2.65V
2.55 to 2.80V
2.70 to 2.95V
2.85 to 3.10V
3.00 to 3.30V
Screw torque
Mounting *1
Terminals *2
N·m
N·m
Ic = 300A
VGE = 15V
Tj = 25°C
4.5
*1 : Recommendable value : 2.5 to 3.5N·m (M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5N·m (M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
3.0
45
Zero gate voltage collector current ICES
–
–
–
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
VGE=15V, IC=300A
VGE=0V
mA
µA
V
Gate-Emitter leakage current
IGES
–
–
Gate-Emitter threshold voltage
VGE(th)
4.5
7.5
3.3
–
Collector-Emitter saturation voltage VCE(sat)
–
–
–
–
–
–
–
–
–
–
–
V
Input capacitance
Cies
Coes
Cres
ton
48000
17400
15480
–
pF
Output capacitance
Reverse transfer capacitance
Turn-on time
–
VCE=10V
–
f=1MHz
1.2
0.6
1.5
0.5
3.0
VCC=600V
µs
tr
0.25
IC=300A
Turn-off time
toff
–
VGE=±15V
tf
0.35
RG=2.7ohm
Diode forward on voltage
Reverse recovery time
VF
trr
–
–
IF=300A, VGE=0V
IF=300A
V
0.35
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Min. Typ.
Conditions
Unit
Max.
0.06
Rth(j-c)
Rth(j-c)
Rth(c-f)*
IGBT
–
–
°C/W
°C/W
°C/W
Thermal resistance
Diode
–
–
–
0.15
–
the base to cooling fin
0.0167
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-120-01
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
700
700
600
500
400
300
200
600
500
400
300
200
100
0
100
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
10
8
6
8
6
4
2
0
4
2
0
0
5
10
15
20
25
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=125°C
Switching time vs. Collector current
Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=25°C
1000
100
10
1000
100
10
0
100
200
300
400
500
600
0
100
200
300
400
500
600
Collector current : Ic [A]
Collector current : Ic [A]
2MBI300N-120-01
IGBT Module
Dynamic input characteristics
Tj=25°C
Switching time vs. RG
Vcc=600V, Ic=300A, VGE=±15V, Tj=25°C
1000
800
25
20
15
10
5
1000
600
400
200
100
0
0
1
10
0
500
1000
1500
2000
2500
3000
3500
4000
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current vs. Forward voltage
VGE=0V
500
700
600
500
400
300
100
200
100
0
0
100
200
300
400
500
600
0
1
2
3
4
5
Forward current
:
IF [A]
Forward voltage
:
VF [V]
Reversed biased safe operating area
< < >
Transient thermal resistance
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 2.7 ohm
3000
2500
2000
1500
1000
0.1
0.01
500
0
0.001
0
200
400
600
800
VCE [V]
1000
1200
0.001
0.01
0.1
: PW [sec.]
1
Collector-Emitter voltage
:
Pulse width
2MBI300N-120-01
IGBT Module
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss vs. Collector current
Vcc=600V, RG=2.7 ohm, VGE=±15V
125
100
100
75
10
50
25
0
1
0
5
10
15
20
25
30
35
0
100
200
300
400
500
600
Collector-Emitter voltage
:
VCE [V]
Collector current
:
Ic [A]
Outline Drawings, mm
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