2MBI300N-060-04D [FUJI]
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7;型号: | 2MBI300N-060-04D |
厂家: | FUJI ELECTRIC |
描述: | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 晶体 晶体管 功率控制 双极性晶体管 局域网 |
文件: | 总4页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IGBT Module
2MBI300N-060-04
600V / 300A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
E2
C1
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Unit
V
Item
Symbol
VCES
Rating
¤
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
¤
600
V
VGES
±20
A
IC
300
A
current
1ms
IC pulse
-IC
600
300
G1
E1
G2
E2
A
¤ Current control circuit
A
1ms
-IC pulse
PC
600
VCE(sat) classification
Rank Lenge
W
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
1100
°C
°C
V
Tj
Conditions
+150
Tstg
F
1.85 to 2.10V
2.00 to 2.25V
2.15 to 2.40V
2.30 to 2.60V
2.50 to 2.80V
-40 to +125
AC 2500 (1min.)
3.5
Vis
A
B
C
D
Ic = 300A
VGE = 15V
Tj = 25°C
N·m
N·m
Screw torque
Mounting *1
Terminals *1
3.5
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
–
Max.
2.0
30
7.5
2.8
–
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
–
–
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
VGE=15V, IC=300A
VGE=0V
mA
µA
V
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
V
19800
4400
2000
pF
Output capacitance
–
VCE=10V
Reverse transfer capacitance
Turn-on time
–
f=1MHz
0.6
1.2
0.6
1.0
VCC=300V
µs
tr
0.2
0.6
0.2
IC=300A
Turn-off time
toff
VGE=±15V
tf
0.35
RG=6.8ohm
Diode forward on voltage
Reverse recovery time
VF
–
–
3.0
0.3
IF=300A, VGE=0V
IF=300A
V
trr
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
–
Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
IGBT
–
–
–
0.11
°C/W
°C/W
°C/W
Thermal resistance
Diode
–
0.24
–
the base to cooling fin
0.025
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
2MBI300N-060-04
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
700
700
600
500
400
300
200
600
500
400
300
200
100
0
100
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
10
8
6
8
6
4
2
0
4
2
0
0
5
10
15
20
25
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=125°C
1000
100
10
1000
100
10
0
100
200
300
400
500
0
100
200
300
400
500
Collector current : Ic [A]
Collector current : Ic [A]
IGBT Module
2MBI300N-060-04
Dynamic input characteristics
Switching time vs. RG
Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C
Tj=25°C
500
400
300
200
100
0
25
20
15
10
1000
100
5
0
10
0
500
1000
1500
1
2
10
20
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current vs. Forward voltage
VGE=0V
500
700
600
500
400
300
100
50
200
100
0
0
100
200
300
400
500
0
1
2
3
4
Forward current
:
IF [A]
Forward voltage
: VF [V]
Reversed biased safe operating area
<
< >
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 6.8 ohm
Transient thermal resistance
3000
2500
2000
1500
1000
0.1
500
0
0.01
0
100
200
300
400
VCE [V]
500
600
0.001
0.01
0.1
: PW [sec.]
1
Collector-Emitter voltage
:
Pulse width
IGBT Module
2MBI300N-060-04
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss vs. Collector current
Vcc=300V, RG=6.8 ohm, VGE=±15V
100
10
1
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
0
100
200
300
Ic [A]
400
500
Collector-Emitter voltage
:
VCE [V]
Collector current
:
Outline Drawings, mm
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