FMM5509ZE [FUJITSU]
RF/Microwave Amplifier, GAAS;
| 型号： | FMM5509ZE |
| 厂家： | 
FUJITSU |
| 描述： | RF/Microwave Amplifier, GAAS |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
DESCRIPTION
The FMM5509ZE contains a two-stage amplifier that is designed for AMPS applications
in the 824 to 849MHz frequency range. This product is well suited for applications
where high power, high efficiency, low noise power, and single power supply are
required.
FEATURES
• High Power Output: 30.5dBm (Min.)
• Single Supply Voltage Operation (Enhancement Mode)
• No Negative Voltage Generator
• Low Leakage Current Eliminates Drain Switch
• High Efficiency: 55% (Typ.)
• Low Rth
• Small Size: SSOP-16 Plastic package for SMT applications
ELECTRICAL CHARACTERISTICS (Pin=+7dBm,Tc=25¡C, V =+4.8V, Vapc1, 2=+2.7V, Note 1, 2)
DD1, 2
Limits
Typ.
Item
Symbol
Conditions
Unit
Min.
824
-
Max.
849
50
Frequency
MHz
µA
-
2
-
f
Drain Cutoff Current
Output Power-1
I
Vapc=0V, Pin=Off
off
+30.5
-
dBm
Vapc=+2.7V
VDD1, 2=4.2V
Vapc=+2.7V
Pout1
Pout2
Output Power-2
+28.3
-
-
dBm
Operation Current
IDDt
Nt
-
50
-
-
55
-
460
-
mA
%
Total Efficiency (Note 3)
Power Control Voltage
Power Control Current
Vapc
Iapc
V
2.7
5
Pout=+30.5dBm
adjusted with Vapc
-
2
mA
Harmonics
2, 3, 4fo
S11
-
-
-
-30
-6
dBc
dB
Input Return Loss
-10
Pin=+7dBm
Vapc=+0.2V
Output Power-3 (Isolation)
Stability
Pout3
-
-
dBm
0
Pin=+7dBm, Pout=+30.5dBm
at APC controlled with
All spurious output more
than 60dB below the fundamental
signal level
Z =Z =50W, VDD1, 2=4.0-6.0V
L
S
Load VSWR ² 4:1 All phase
Pin=+7dBm, Pout=+30.5dBm
at APC controlled with
ZL=50W, VDD1, 2=4.0-6.0V
Load VSWR ² 20:1
All phase 10 sec.
Pin+=7dBm
No damage to MMIC
Load Mismatch
Noise Power
-
-
-95
-
-90
10
dBm
Pnp
Rth
45MHz above f, B.W. =30KHz
Thermal Resistance (Note 4)
CASE STYLE: ZE
¡C/W
Note 1: Measured with a Fujitsu test fixture containing external matching circuits optimized for operation with Z =Z =50W.
S
L
Note 2: Measured at the RF and RF
connectors of the Fujitsu test fixture.
in
out
Note 3: Total efficiency will be calculated as follows: Nt=(Pout(mW)-Pin(mW))/(VDD* (IDDt+Iapc))
Note 4: Thermal resistance is defined for temperature rise from the ZE package heatsink/ground at backside
to the final stage FET channel.
Edition 1.3 Preliminary
August 1998
1
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25¡C)
Parameter
Supply Voltage
Symbol
Condition
Rating
Unit
+10
+3.5
V
V
V
DD
Power Control Voltage
Input RF Power
Vapc
P
dBm
W
+12
in
Total Power Dissipation
Storage Temperature
Channel Temperature
P
4
T
T
-55 to +145
+145
¡C
¡C
stg
T
ch
V
DD1
RFin
+7 dBm
RFout
DD2
V
(
)
0 ~ +30.5dBm
V
=4.8V
= 0 ~ 3.5V
DD1, 2
Vapc
1, 2
V
V
apc 2
apc 1
Figure 1: Functional Block Diagram of FMM5509ZE
2
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
4.55
0.65
0.4
3.4
2.4
14 - f0.4
1.5
0.9
1.0
0.5
0.4
0.4
0.5
1.0
0.9
1.5
2.4
3.4
Units: mm
Figure 2: Recommended PCB Pad Layout
3
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
OUTPUT POWER & h
vs. INPUT POWER
add
35
60
V
V
DD1, 2 = +4.8V
apc
= +2.7V
Pout
Pout 824 MHz
Pout 849 MHz
hadd 824 MHz
hadd 849 MHz
30
25
20
50
40
h
add
30
20
15
10
10
0
5
-10
-5
0
5
10
Input Power (dBm)
OUTPUT POWER & h
vs. OUTPUT CONTROL VOLTAGE
add
60
35
V
DD1, 2 = +4.8V
Pin = +7dBm
Pout 824 MHz
Pout 849 MHz
hadd 824 MHz
hadd 849 MHz
50
40
30
30
25
Pout
20
15
10
h
add
20
10
0
5
0.0
1.0
2.0
3.0
Output Control Voltage (V)
4
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
FMM5509ZE Pin Assignment
GND
VDD1
GND
1
2
3
4
5
6
7
8
16 GND
GND
15
14
13
12
11
GND
GND
VDD2(RFout)
VDD2(RFout)
GND
RFin
GND
GND
10 GND
Vapc2
Vapc1
9
V
DD1
1
16
1µF
V
DD2
1µF
V
DD1
20pF
V
V
DD2
DD2
RFout
RFin
RFin
51pF
6.0pF
Vapc1
Vapc2
1.1kW
1.1kW
8
9
2.7kW
2.0kW
1µF
1µF
Vapc
Figure 3: Recommended Bias Circuit
5
FMM5509ZE
800MHz Band GaAs Power Amplifier MMIC
Case Style "ZE"
6.40±0.2
5.00±0.12
0.70±0.2
0.70±0.2
1.5
(1.0)
(0.4)
1
16
8
9
(2.7)
(5.1)
Unit: mm
Note: The dimensions in parenthesis
do not include resin burrs
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
6
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