FMM5704X [EUDYNA]
36-40GHz LNA MMIC; 36-40GHz低噪声放大器MMIC
| 型号： | FMM5704X |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | 36-40GHz LNA MMIC |
| 文件： | 总4页 (文件大小：1257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMM5704X
36-40GHz LNA MMIC
FEATURES
• Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz
• High Associated Gain: G = 18dB (Typ.) @ f=40 GHz
as
• Wide Frequency Band: 36-40 GHz
• High Output Power: 9dBm (Typ.) @ f=40 GHz
• Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5704X is a LNA MMIC designed for
applications in the 36-40 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Input Power
Symbol
Condition
Unit
V
Rating
V
4
DD
P
-3
dBm
in
Storage Temperature
T
-65 to +175
-45 to +125
stg
°C
°C
T
Operating Backside Temperature
op
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 3 volts.
DD
2. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limits
Typ.
Item
Symbol
Conditions (2)
Unit
Min.
Max.
NF
Noise Figure
-
2.0
2.5
20
dB
G
Associated Gain
15
18
dB
as
V
= 3V
DD
f = 40GHz
= 20mA (Typ.)
I
DD
Z = Z = 50Ω
Output Power at 1dB G.C.P.
Input Return Loss
P1dB
-
-
-
9
-
-
-
dBm
dB
S
L
RL
-10
-10
in
Output Return Loss
RL
dB
out
Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2: Electrical Characteristics specified with RF-probe measurement.
Edition 1.0
December 2000
1
FMM5704X
36-40GHz LNA MMIC
NOISE FIGURE & G vs. FREQUENCY
as
P1dB & G1dB vs. FREQUENCY
25
20
15
10
V
= 3V
DD
= 20mA
V
I
= 3V
= 20mA
DD
DD
I
DD
5
4
3
2
1
12
10
8
P1dB
G
as
G1dB
25
20
15
NF
6
4
5
0
10
30
32
34
36
38
40
30
35
40
45
Frequency (GHz)
Frequency (GHz)
OUTPUT POWER vs. INPUT POWER
14
V
= 3V
= 20mA
DD
12
10
8
I
DD
32 GHz
34 GHz
36 GHz
38 GHz
40 GHz
6
4
2
0
-2
-4
-20
-15
-10
-5
0
5
Input Power (dBm)
ASSEMBLY DRAWING
0.15µF
100pF
RF
RF
in
out
*1: Bonding Wire Length: 250µm
*2: Bonding Wires: 2
*1
*2
*1
*2
2
FMM5704X
36-40GHz LNA MMIC
S-PARAMETERS
= 3V, I = 20mA
V
DD
DS
FREQUENCY
(MHZ)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
16000
16500
17000
17500
18000
18500
19000
19500
20000
20500
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
27000
27500
28000
28500
29000
29500
30000
30500
31000
31500
32000
32500
33000
33500
34000
34500
35000
35500
36000
36500
37000
37500
38000
38500
39000
39500
40000
.920
.926
.936
.945
.957
.968
.977
.990
1.000
1.012
1.023
1.039
1.052
1.054
1.063
1.065
1.061
1.048
1.042
1.022
1.002
.976
.932
.882
.832
.773
.722
.659
.557
.487
.385
.287
.227
.157
.122
.088
.107
.116
133.9
128.0
122.0
115.7
109.4
102.7
96.1
.067
.084
41.5
35.3
26.4
20.1
8.9
.004
.002
.001
.000
.002
.002
.004
.004
.005
.006
.005
.006
.007
.006
.008
.008
.007
.008
.007
.006
.004
.004
.004
.003
.004
.003
.006
.010
.012
.016
.018
.018
.019
.020
.022
.023
.024
.024
.024
.023
.024
.027
.029
.031
.029
.025
.022
.019
.016
62.1
24.5
.831
.828
.826
.824
.823
.821
.815
.814
.810
.809
.808
.808
.809
.808
.809
.814
.815
.815
.815
.816
.814
.813
.816
.816
.801
.795
.752
.705
.670
.619
.554
.487
.406
.323
.264
.217
.174
.138
.111
.107
.123
.138
.176
.225
.248
.263
.283
.291
.282
-166.6
-169.9
-173.2
-176.5
-179.7
176.8
173.5
170.4
167.2
163.9
160.7
157.5
154.1
150.5
147.4
143.7
139.5
135.7
131.1
126.1
121.7
116.7
111.4
105.3
98.4
.097
-62.6
.118
-174.7
101.1
82.9
.138
.161
3.4
.204
-6.5
56.0
89.0
.256
-15.3
-23.2
-34.0
-43.4
-54.3
-64.0
-75.1
-86.0
-98.2
37.8
82.2
.299
19.7
75.0
.369
5.3
67.4
.446
-12.1
-15.5
-24.4
-28.5
-34.6
-52.7
-66.0
-66.7
-72.4
-87.8
-88.2
-65.8
-71.0
-70.8
-20.4
-15.5
0.7
59.7
.551
51.7
.635
43.1
.757
34.8
.925
25.8
1.117
1.340
1.546
1.786
2.093
2.560
3.037
3.736
4.235
4.917
5.691
6.558
7.712
8.807
9.847
10.915
11.425
12.051
12.664
12.612
12.479
11.885
11.451
10.651
9.866
9.103
8.559
8.196
7.751
7.109
6.467
6.302
6.072
5.836
16.5
-108.5
-122.4
-133.5
-144.8
-155.7
-168.2
175.5
158.4
143.9
131.5
117.1
100.0
79.4
7.4
-2.2
-12.0
-21.9
-32.2
-43.0
-53.5
-64.9
-75.0
-85.4
-98.6
-109.6
-121.1
-136.5
-140.5
-142.4
-147.4
-139.5
-134.7
-119.7
-113.0
-122.0
-116.2
-97.4
-90.5
-97.5
-111.1
-85.5
-68.8
-71.8
-69.3
-65.9
89.7
81.0
-16.3
-16.5
-34.9
-47.2
-58.4
-63.5
-71.3
-76.7
-86.7
-96.3
-105.6
-113.1
-115.1
-120.8
-127.8
-137.6
-153.1
-168.7
178.9
171.6
167.2
165.6
74.3
64.5
61.7
54.6
42.3
45.6
24.0
34.5
4.7
23.6
-14.5
-33.4
-51.5
-69.8
-86.2
-102.1
-116.0
-128.4
-141.1
-151.7
-164.8
-174.9
175.0
166.3
158.0
149.4
14.8
3.5
-12.7
-37.2
-71.8
-114.6
-155.2
-174.6
-179.0
177.3
165.9
153.5
144.4
135.7
127.7
119.0
.090
.071
.049
.076
.096
.076
.063
.071
.076
.096
.115
Download S-Parameters, click here
3
FMM5704X
36-40GHz LNA MMIC
CHIP OUTLINE
400
660
1060
Unit: µm
VDD1
VDD2
VDD3
900
RF IN
500
RF OUT
0
0
160
1300
Chip Size: 1.46mm x 1.06mm
Chip Thickness: 110µm(Typ.)
Pad Dimensions: 1. DC 80 x 80µm
2. RF 80 x 160µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05009M200
4
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