FMM5701X [FUJITSU]
24GHz Low Noise Amplifier MMIC; 24GHz的低噪声放大器MMIC![FMM5701X](http://pdffile.icpdf.com/pdf1/p00023/img/icpdf/FMM5701X_115284_icpdf.jpg)
型号: | FMM5701X |
厂家: | ![]() |
描述: | 24GHz Low Noise Amplifier MMIC |
文件: | 总4页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FMM5701X
24GHz Low Noise Amplifier MMIC
FEATURES
• Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz
• High Associated Gain: G =13.5dB (Typ.) @ f=24GHz
as
• Wide Frequency Band: 18-28GHz
DESCRIPTION
The FMM5701X is a LNA MMIC designed for applications in the
18-28GHz frequency range. This product is well suited for satellite
communications and radio link applications where low noise and high
gain is required.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain Voltage
Gate Voltage
V
7.0
-3.0
V
V
DD
V
GG
Storage Temperature
Channel Temperature
T
-65 to +175
+175
°C
°C
stg
T
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limits
Typ.
Item
Symbol
Conditions (2)
Unit
Min.
Max.
f=24GHz
-
1.5
1.8
dB
NF
Noise Figure
V
DD
= 5V
I =12mA
D
G
Associated Gain
f=24GHz
as
12.0 13.5
-
dB
Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3)
Note 2: Tuned for Γopt
NOISE FIGURE & G vs. FREQUENCY
as
V
=5V, I =12mA
DD
DD
(Z =Z =50Ω)
30
25
20
15
10
9
S
L
(Tuned for Γopt)
8
7
6
5
4
3
2
1
0
G
as
10
5
0
NF
-5
-10
-15
0
10
12
14
16
18
20
22
24
26
28
30
Frequency (GHz)
Edition 1.2
1
January 2000
FMM5701X
24GHz Low Noise Amplifier MMIC
S-PARAMETERS
V
= 5V, I
DS
= 12mA
DD
FREQUENCY
(MHZ)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
15000
16000
17000
18000
19000
20000
21000
22000
23000
24000
25000
26000
27000
28000
29000
30000
.469
.492
.512
.542
.568
.598
.615
.640
.663
.683
.702
.722
.732
.737
.756
.762
-131.8
-137.9
-145.8
-153.9
-162.7
-172.5
178.2
168.3
158.5
148.6
138.7
128.8
119.0
109.4
99.4
8.289
7.642
6.987
6.487
5.950
5.456
5.027
4.634
4.258
3.919
3.638
3.318
3.033
2.820
2.595
2.370
130.9
115.7
101.5
87.3
73.6
60.1
47.5
34.5
22.0
9.9
.017
.018
.020
.021
.023
.025
.026
.028
.030
.032
.035
.038
.040
.044
.048
.051
23.3
16.6
10.9
7.0
.350
.330
.311
.296
.287
.283
.273
.268
.265
.262
.265
.267
.265
.266
.271
.270
-132.7
-138.4
-144.1
-149.0
-154.2
-160.2
-165.6
-170.8
-176.5
178.5
172.7
166.4
162.1
155.5
150.6
144.9
2.3
-3.6
-7.5
-10.9
-15.1
-17.9
-21.1
-27.0
-28.3
-31.7
-37.4
-40.3
-2.2
-14.3
-25.1
-35.8
-47.7
-57.4
90.3
NOTE:* The data includes bonding wires.
n: number of wires RF IN
RF OUT n=1 (0.3mm length, 25µm Dia Au wire)
GND n=6 (0.3mm length, 25µm Dia Au wire)
n=1 (0.3mm length, 25µm Dia Au wire)
Download S-Parameters, click here
BONDING LAYOUT
NOISE PARAMETERS
V
=5V, I =12mA
DD DD
RF out and V
DD
Γopt
Freq.
(GHz)
NFmin
(dB)
Rn
(MAG)
(ANG)
2
4
6
0.793
0.670
0.582
0.526
0.492
0.475
0.468
0.464
0.458
0.441
0.408
0.352
0.266
0.212
0.202
13.4
26.9
38.5
54.4
69.1
0.78
0.84
0.90
0.97
1.03
1.09
1.16
1.22
1.28
1.35
1.41
1.47
1.54
1.60
1.66
0.47
0.39
0.34
0.27
0.23
0.19
0.14
0.10
0.07
0.05
0.05
0.07
0.11
0.16
0.23
8
10
12
14
16
18
20
22
24
26
28
30
84.7
101.6
120.1
140.4
162.9
-172.2
-144.5
-113.9
-88.5
-58.0
RF in and V
GG
2
FMM5701X
24GHz Low Noise Amplifier MMIC
NOTES
3
FMM5701X
24GHz Low Noise Amplifier MMIC
CHIP OUTLINE
25
95
80
95
100
RF out
40
40
RF in
25
100
110
80
Unit: µm
520
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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