FMM5701X [FUJITSU]

24GHz Low Noise Amplifier MMIC; 24GHz的低噪声放大器MMIC
FMM5701X
型号: FMM5701X
厂家: FUJITSU    FUJITSU
描述:

24GHz Low Noise Amplifier MMIC
24GHz的低噪声放大器MMIC

射频和微波 射频放大器 微波放大器
文件: 总4页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FMM5701X  
24GHz Low Noise Amplifier MMIC  
FEATURES  
Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz  
High Associated Gain: G =13.5dB (Typ.) @ f=24GHz  
as  
Wide Frequency Band: 18-28GHz  
DESCRIPTION  
The FMM5701X is a LNA MMIC designed for applications in the  
18-28GHz frequency range. This product is well suited for satellite  
communications and radio link applications where low noise and high  
gain is required.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain Voltage  
Gate Voltage  
V
7.0  
-3.0  
V
V
DD  
V
GG  
Storage Temperature  
Channel Temperature  
T
-65 to +175  
+175  
°C  
°C  
stg  
T
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limits  
Typ.  
Item  
Symbol  
Conditions (2)  
Unit  
Min.  
Max.  
f=24GHz  
-
1.5  
1.8  
dB  
NF  
Noise Figure  
V
DD  
= 5V  
I =12mA  
D
G
Associated Gain  
f=24GHz  
as  
12.0 13.5  
-
dB  
Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3)  
Note 2: Tuned for Γopt  
NOISE FIGURE & G vs. FREQUENCY  
as  
V
=5V, I =12mA  
DD  
DD  
(Z =Z =50)  
30  
25  
20  
15  
10  
9
S
L
(Tuned for Γopt)  
8
7
6
5
4
3
2
1
0
G
as  
10  
5
0
NF  
-5  
-10  
-15  
0
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
Frequency (GHz)  
Edition 1.2  
1
January 2000  
FMM5701X  
24GHz Low Noise Amplifier MMIC  
S-PARAMETERS  
V
= 5V, I  
DS  
= 12mA  
DD  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
15000  
16000  
17000  
18000  
19000  
20000  
21000  
22000  
23000  
24000  
25000  
26000  
27000  
28000  
29000  
30000  
.469  
.492  
.512  
.542  
.568  
.598  
.615  
.640  
.663  
.683  
.702  
.722  
.732  
.737  
.756  
.762  
-131.8  
-137.9  
-145.8  
-153.9  
-162.7  
-172.5  
178.2  
168.3  
158.5  
148.6  
138.7  
128.8  
119.0  
109.4  
99.4  
8.289  
7.642  
6.987  
6.487  
5.950  
5.456  
5.027  
4.634  
4.258  
3.919  
3.638  
3.318  
3.033  
2.820  
2.595  
2.370  
130.9  
115.7  
101.5  
87.3  
73.6  
60.1  
47.5  
34.5  
22.0  
9.9  
.017  
.018  
.020  
.021  
.023  
.025  
.026  
.028  
.030  
.032  
.035  
.038  
.040  
.044  
.048  
.051  
23.3  
16.6  
10.9  
7.0  
.350  
.330  
.311  
.296  
.287  
.283  
.273  
.268  
.265  
.262  
.265  
.267  
.265  
.266  
.271  
.270  
-132.7  
-138.4  
-144.1  
-149.0  
-154.2  
-160.2  
-165.6  
-170.8  
-176.5  
178.5  
172.7  
166.4  
162.1  
155.5  
150.6  
144.9  
2.3  
-3.6  
-7.5  
-10.9  
-15.1  
-17.9  
-21.1  
-27.0  
-28.3  
-31.7  
-37.4  
-40.3  
-2.2  
-14.3  
-25.1  
-35.8  
-47.7  
-57.4  
90.3  
NOTE:* The data includes bonding wires.  
n: number of wires RF IN  
RF OUT n=1 (0.3mm length, 25µm Dia Au wire)  
GND n=6 (0.3mm length, 25µm Dia Au wire)  
n=1 (0.3mm length, 25µm Dia Au wire)  
Download S-Parameters, click here  
BONDING LAYOUT  
NOISE PARAMETERS  
V
=5V, I =12mA  
DD DD  
RF out and V  
DD  
Γopt  
Freq.  
(GHz)  
NFmin  
(dB)  
Rn  
(MAG)  
(ANG)  
2
4
6
0.793  
0.670  
0.582  
0.526  
0.492  
0.475  
0.468  
0.464  
0.458  
0.441  
0.408  
0.352  
0.266  
0.212  
0.202  
13.4  
26.9  
38.5  
54.4  
69.1  
0.78  
0.84  
0.90  
0.97  
1.03  
1.09  
1.16  
1.22  
1.28  
1.35  
1.41  
1.47  
1.54  
1.60  
1.66  
0.47  
0.39  
0.34  
0.27  
0.23  
0.19  
0.14  
0.10  
0.07  
0.05  
0.05  
0.07  
0.11  
0.16  
0.23  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
84.7  
101.6  
120.1  
140.4  
162.9  
-172.2  
-144.5  
-113.9  
-88.5  
-58.0  
RF in and V  
GG  
2
FMM5701X  
24GHz Low Noise Amplifier MMIC  
NOTES  
3
FMM5701X  
24GHz Low Noise Amplifier MMIC  
CHIP OUTLINE  
25  
95  
80  
95  
100  
RF out  
40  
40  
RF in  
25  
100  
110  
80  
Unit: µm  
520  
For further information please contact:  
FUJITSU COMPOUND SEMICONDUCTOR, INC.  
2355 Zanker Rd.  
CAUTION  
San Jose, CA 95131-1138, U.S.A.  
Phone: (408) 232-9500  
Fujitsu Compound Semiconductor Products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
FAX: (408) 428-9111  
www.fcsi.fujitsu.com  
• Do not put these products into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
FUJITSU MICROELECTRONICS EUROPE, GmbH  
Quantum Devices Division  
Network House  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
Norreys Drive  
Maidenhead, Berkshire SL6 4FJ  
Phone:+44 (0)1628 504800  
FAX:+44 (0)1628 504888  
Fujitsu Limited reserves the right to change products and specifications without notice.  
The information does not convey any license under rights of Fujitsu Limited or others.  
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Printed in U.S.A. FCSI0598M200  
4

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