FDR40 [FS]
SCHOTTKY BARRIER DIODE;
| 型号： | FDR40 |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总4页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDR40-04
TECHNICAL DATA
SCHOTTKY BARRIER DIODE
Features
3
Low forward current
Guard ring protected
Low diode capacitance.
2
1
SOT–23
APPLICATIONS
Ultra high- speed switching
Voltage clamping
Protection circuits.
Blocking diodes.
1
3
Cathode
Anode
FDR40 single diode.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.
3
Cathode/Anode
We declare that the material of product
compliance with RoHS requirements.
1
2
Anode
Cathode
FDR40- 04 double diode.
3
Cathode
ORDERING INFORMATION
1
Device
Marking
Shipping
2
Anode
Anode
FDR40
3000 Tape & Reel
B1
FDR40- 05 double diode.
FDR40- 04
3000 Tape & Reel
CB
45
3000 Tape & Reel
3000 Tape & Reel
FDR40- 05
FDR40- 06
3
Anode
L2
1
2
Cathode
Cathode
FDR40- 06 double diode.
2017. 4. 23
Revision No : 0
1/4
FDR40-04
MAXIMUM RATINGS (TA = 25℃)
Parameter
Symbol
Min.
-
-
-
-
Max.
40
Unit
V
Conditions
Continuous reverse voltage
Continuous forward current
Repetitive Peak forward surge current
Non- repetitive peak forward current
Storage temperature
VR
IF
120
mA
mA
mA
°C
IFSM
IFSM
Tstg
120
tp<1s;δ<0.5
200
tp<10ms
- 65
-
+150
150
Junction temperature
Tj
T
°C
Operating ambient temperature
- 65
+150
°C
amb
DEVICE MARKING
FDR40 = B1 FDR40- 04 = CB FDR40- 05 = 45 FDR40- 06 = L2
ELECTRICAL CHARACTERISTICS(TA= 25℃)
Parameter
Symbol
VF
Max.
400
560
1
Unit
mV
mv
v
Conditions
IF=1mA
Forward voltage(Fig.1)
IF=10mA
IF=40mA
VR=30V
Reverse current(Fig.2;note1)
Diode capacitance(Fig.4)
IR
1
µΑ
µA
pF
10
5
VR=40V
Cd
f=1MHz;V =0
R
Note:
1. Pulse test:tp=300µs;δ=0.02.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL V ALUE
UNIT
k/ w
CONDITIONS
note1
Thermal resistance from junction to ambient
Rth j- a
500
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
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Revision No : 0
2/4
FDR40-04
Electrical characteristic curves(T
A
= 25℃)
2
3
10
10
T
=150OC
=85OC
T
=85OC
amb
amb
2
10
T
=150OC
amb
10
1
T
=25OC
amb
10
1
T
T
amb
T
=-
40OC
amb
-1
10
-1
=25OC
amb
10
-2
-2
10
10
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
FORWARD VOLTAGE: V (V)
R
FORWARD VOLTAGE: V (V)
F
Fig.2 Reverse current as a function of
reverse voltage; typical values.
Fig.1 Forward current as a function of
forward voltage; typical values.
5
3
10
4
3
2
1
0
2
10
10
1
-1
2
0
10
20
30
40
10
1
10
10
f=1MHz Tamb=25OC
FORWARD VOLTAGE: I (mA)
FORWARD VOLTAGE: V (V)
f=10KHz
F
R
Fig.3 Differential forward resistance as a function
of forward current;typical values.
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
2017. 4. 23
Revision No : 0
3/4
FDR40-04
SOT- 23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
MAX
3.04
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
V
G
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2017. 4. 23
Revision No : 0
4/4
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