FDR4420A [FAIRCHILD]
Single N-Channel, Logic Level, PowerTrenchTM MOSFET; 单N沟道逻辑电平MOSFET PowerTrenchTM
| 型号： | FDR4420A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 文件： | 总4页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
11 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V,
RDS(ON) = 0.013 W @ VGS = 4.5 V.
Fast switching speed.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
These devices are well suited for low voltage and battery
powered applications where small package size is required
Low profile package(1mm thick).
without compromising power handling and fast switching.
Power handling capability similar to SO-8.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
SOIC-16
SO-8
SOT-223
S
5
6
7
8
4
3
2
1
D
D
S
G
D
D
1
pin
SuperSOTTM-8
D
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
FDR4420A
Units
Drain-Source Voltage
30
V
VDSS
VGSS
ID
Gate-Source Voltage
Draint Current - Continuous
- Pulsed
±20
V
A
(Note 1a)
11
40
1.8
Maximum Power Dissipation
(Note 1a)
(Note 1b)
PD
W
1
(Note 1c)
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
70
20
°C/W
°C/W
(Note 1)
© 1998 Fairchild Semiconductor Corporation
FDR4420 Rev.D
Electrical Characteristics (TA = 25OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
V
ID = 250 µA, Referenced to 25 o C
mV /oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
20
DBVDSS/DTJ
1
µA
µA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
10
TJ = 55°C
IGSS
IGSS
Gate - Body Leakage Current
Gate - Body Leakage, Reverse
VGS = 20 V, VDS= 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Temp.Coefficient
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
-6
mV /oC
V
DVGS(th)/DTJ
VGS(th)
Gate Threshold Voltage
1
1.4
3
Static Drain-Source On-Resistance
0.0075
0.0125
0.01
0.009
0.016
0.013
RDS(ON)
VGS = 10 V, ID = 11A
W
TJ =125°C
VGS = 4.5 V, ID = 9 A
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID= 11 A
ID(ON)
gFS
On-State Drain Current
30
A
S
Forward Transconductance
25
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2560
560
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
280
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
11
15
25
21
23
7
20
27
40
34
33
ns
ns
tD(on)
tr
tD(off)
tf
VDD = 10 V, ID = 1 A,
VGS = 10V, RGEN = 1 W
ns
ns
nC
nC
nC
Qg
Qgs
Qgd
VDS = 15 V, ID = 9.3 A,
VGS = 5 V
Gate-Source Charge
Gate-Drain Charge
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.5
1.2
A
V
IS
0.7
VSD
VGS = 0 V, IS = 1.5 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design
while RqCA is determined by the user's board design. RqJA shown below for single device operation on FR-4 board in still air.
c. 135OC/W on a 0.005 in2 of pad
of 2oz copper.
b. 125OC/W on a 0.026 in2 of pad
of 2oz copper.
a. 70OC/W on a 1 in2 pad of 2oz
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR4420 Rev.D
Typical Electrical Characteristics
3
2.5
2
40
V
=10V
GS
4.0V
3.5V
6.0V
4.5V
32
24
16
8
V
= 3.0V
GS
3.0V
3.5
4.0
1.5
1
4.5
24
5.0
6.0
32
10
2.5V
0.5
0
0
8
16
40
0
0.4
0.8
1.2
1.6
2
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.04
0.035
0.03
1.8
1.6
1.4
1.2
1
ID = 5.5A
I
= 11A
D
V
=10V
GS
0.025
0.02
TA = 125oC
0.015
0.01
0.8
25o
C
0.6
-50
0.005
-25
0
25
50
75
100
125
150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
,GATE-SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
40
50
V
=0V
T = -55°C
J
GS
V
= 10V
DS
25°C
125°C
5
1
40
30
20
10
0
T = 125°C
J
25°C
0.1
0.01
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
V
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR4420 Rev.D
Typical Electrical Characteristics (continued)
10
5000
VDS = 5V
ID = 11A
10V
3000
2000
C
iss
8
15V
6
4
2
0
1000
500
C
C
oss
f = 1 MHz
= 0V
V
rss
GS
200
0.1
0.3
1
3
10
30
0
10
20
Q
30
40
50
60
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
100
50
40
30
20
10
SINGLE PULSE
R qJA= 135°C/W
TA = 25°C
20
5
1
0.3
0.1
VGS = 10V
SINGLE PULSE
R
JA= 135°C/W
q
0.03
0.01
TA = 25°C
0
0.0001
0.001
0.01
0.1
1
10
100 300
0.1
0.2
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
R
0.3
0.2
q
= 135°C/W
JA
q
0.1
0.1
P(pk)
0.05
t
0.05
1
t
2
0.02
0.01
Single Pulse
0.03
0.02
T
- T = P * R
(t)
JA
J
A
q
Duty Cycle, D = t / t
1
2
0.01
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11.Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDR4420 Rev.D
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