FDR4410 [FAIRCHILD]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | FDR4410 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The FDR4410 has been designed as a smaller, low cost
alternative to the popular Si4410DY.
9.3 A, 30 V. RDS(ON) = 0.013 W @ VGS = 10 V
RDS(ON) = 0.020 W @ VGS = 4.5 V.
The SuperSOTTM-8 package is 40% smaller than the SO-8
package.
High density cell design for extremely low RDS(ON)
.
Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
The SuperSOTTM-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
SO-8
SOIC-16
SOT-223
5
4
3
2
1
S
D
D
S
6
7
8
G
D
D
1
pin
D
SuperSOTTM-8
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
FDR4410
Units
Drain-Source Voltage
30
V
VDSS
VGSS
ID
Gate-Source Voltage
Draint Current - Continuous
- Pulsed
±20
9.3
V
A
(Note 1a)
40
Maximum Power Dissipation
(Note 1a)
1.8
PD
W
(Note 1b)
1
(Note 1c)
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
70
20
°C/W
°C/W
(Note 1)
FDR4410 Rev.C
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
V
ID = 250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
35
DBVDSS/DTJ
1
µA
µA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
25
TJ = 55°C
IGSS
IGSS
Gate - Body Leakage Current
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.5
2
V
ID = 250 µA, Referenced to 25 oC
mV/oC
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
-4.4
DVGS(th)/DTJ
RDS(ON)
0.011
0.017
0.016
0.013
0.02
0.02
VGS = 10 V, ID = 9.3 A
W
TJ =125°C
VGS = 4.5 V, ID = 5 A
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 9.3 A
ID(ON)
gFS
On-State Drain Current
20
A
S
Forward Transconductance
25
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1170
627
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
180
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
12
11
41
34
36
4.5
10
22
20
66
55
50
ns
ns
tD(on)
tr
tD(off)
tf
VDD = 25 V, ID = 1 A,
VGS = 10 V, RGEN = 6 W
ns
ns
nC
nC
nC
Qg
Qgs
Qgd
VDS = 15 V, ID = 9.3 A,
VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.5
1.2
A
V
IS
VSD
VGS = 0 V, IS = 1.5 A (Note 2)
0.72
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design. RqJA shown below for single device operation on FR-4 board in still air.
a. 70OC/W on a 1 in2 pad of 2oz
copper.
b. 125OC/W on a 0.026 in2 of pad
of 2oz copper.
c. 135OC/W on a 0.005 in2 of pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR4410 Rev.C
Typical Electrical Characteristics
3
2.5
2
50
V
= 10V
GS
6.0
5.0
4.5
4.0
V
= 3.5V
GS
40
30
20
10
0
4.0
4.5
3.5
1.5
1
5.0
6.0
10
3.0
0.5
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
3
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.06
ID = 5A
I
=9.3A
=10V
D
V
0.05
0.04
0.03
0.02
0.01
0
GS
T = 125°C
A
0.8
0.6
T = 25°C
A
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
with Temperature.
50
40
30
20
10
0
50
V
= 10V
T = -55°C
J
DS
25°C
V
= 0V
GS
10
1
125°C
T
J
= 125°C
25°C
-55°C
0.1
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.3
0.6
0.9
1.2
1.5
V
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR4410 Rev.C
Typical Electrical Characteristics (continued)
10
3000
2000
ID = 9.3A
VDS =10V
15V
8
6
4
2
0
C
iss
20V
1000
500
C
oss
300
200
f = 1 MHz
C
rss
V
= 0 V
GS
100
0.1
0.2
0.5
1
2
5
10
20 30
0
10
20
30
40
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
80
50
40
30
20
10
SINGLE PULSE
20
5
RqJA=See Note 1c
T = 25°C
A
1
0.5
VGS = 10V
SINGLE PULSE
RqJA= See Note 1c
0.1
TA = 25°C
0.03
0.01
0
0.0001
0.001
0.01
0.1
1
10
100 300
0.1
0.2
0.5
1
3
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
0.3
0.2
q
R
= See Note 1c
JA
q
0.1
0.1
P(pk)
0.05
t
0.05
1
t
2
0.02
0.01
Single Pulse
0.03
0.02
T
- T = P * R
(t)
JA
J
A
q
Duty Cycle, D = t / t
1
2
0.01
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermalresponse will change depending on the circuit board design.
FDR4410 Rev.C
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