FS8601HD [FORTUNE]
One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET;
| 型号： | FS8601HD |
| 厂家： | 
Fortune Semiconductor |
| 描述： | One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET 电池 |
| 文件： | 总15页 (文件大小：940K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REV. 1.3 FS8601Hx-DS-13_EN
JAN 2014
Datasheet
FS8601Hx
One Cell Lithium-ion/Polymer Battery Proection IC With ilt-in MOSFET
FS8601Hx
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F, No. 29-5, Sec. 2, Zhongzheng E. Rd.,
Danshui Dist., New Taipei City 251, Taiwan
Tel.：886-2-28094742
Fax：886-2-28094874
www.ic-fortune.com
This manual contins new ct information. Fortune Semiconductor Corporation reserves the rights to
modify the prouct spcification without further notice. No liability is assumed by Fortune Semiconductor
Corporation as a rsult of the use of this product. No rights under any patent accompany the sale of the
product.
Rev. 1.3
2/15
FS8601Hx
3. Ordering Information
1. General Description
FS8601Hx-D (DFN-5 Green-Package)
Serial code form A, D
FS8601Hx is a series of lithium-ion and
lithium-polymer rechargeable battery protection
ICs with high accurate voltage detection and
delay circuits.
*: Refer to the product name list on next page.
4. Applications
These Ics are suitable for protection of single
cell lithium-ion or lithium polymer battery packs
from over charge, over discharge and over
current.
z
Protection IC for One-Cell Lithium-Ion /
Lithium-Polymer Battery Pack
2. Features
z
z
z
With built-in N-MOSFET of low turn-on
resistance.
Reduction in Board Size due to Minature
Package DFN-5.
Protection IC：
Low supply curent
Normal Operation : 2.5μA (typ.)
@VDD=3.
Power-ode : 0.05μA (typ.)
@VDD=2
Oge dtection voltage
4.255V~4.335V
f ±25mV
Overdischarge detection e
﹝VODL﹞
2.223V~
Accuracy of ±100mV
Over currention voltage
﹝VOI1﹞
120V~0.140 V,
Accuracy of ±mV
Charger over current detection
voltage
-0.09 V(FS8601HA),
-0.10(FS8601HD)
0V-Battery charging fu
z
MOSFET：
Rss(ON) ＜ 48mΩ
(VGS = 3.5V , ID = 1A)
.
Rev. 1.3
3/15
FS8601Hx
5. Product Name List
Package
DFN-5
Overcharge Overcharge Overdischarge Overdischarge Overcurrent
Standby
detection
voltage
release
voltage
detection
voltage
release
voltage
detection
voltage
0V change
function
Model
function
release
[VOCP] (V)
[VOCR] (V)
[VODP] (V)
[VODR] (V)
[VOI1] (V)
Connection
of charger
FS8601HA
FS8601HD
FS8601Hx
FS8601Hx
4.310±25mV 4.110±50mV
4.280±25mV 4.080±50mV
2.300±77mV
2.300±00mV
2.300±77mV
2.300±100mV
0.130±10mV
0.130±10mV
YES
0.65
Connection
of charger
6. Pin Configuration and PackagMarkinInformation
Pin No. Symbol
Description
1
2
3
4
5
6
NC
NC
GND
Groud pin
BATT- Connect tnegative of charger or load
VCC
CS
wer supply, through a resistor R1)
put pin for current senseger detect
Tow MOSFET common draconnection pin
X：Serial code fm A, D
A：Year.
B：Week Code, A~Z & A ~ Z
001 :Serial number
Rev. 1.3
4/15
FS8601Hx
7. Functional Block Diagram
8. Typical Appliction Circuit
Symbol
Purpose
Recommended
Remakes
R1
ESD protectio.
For power fluctuation.
100~470Ω
Resistance should be as small as
possible to avoid lowering of the
overcharge
detection
accuracy
caused by VDD pin current. Use
470Ω for better ESD protection.
C1
R2
For power fluctuation.
Protection for reverse
connection of a
charger.
0.1μF
1k~2kΩ
Select a resistance as large as
possible to prevent large current
when a charge is connected in
reverse.
Rev. 1.3
5/15
FS8601Hx
9. Absolute Maximum Ratings
(VSS=0V, Ta=25°C unless otherwise specified)
Item
Input voltage between VCC and GND *
CS input pin voltage
Symbol
Rating
GND-0.3 to GND+15
VCC -30 to VCC +0.3
-40 to +85
Unit
V
VCC
VCS
TOP
TST
VDS
VGS
V
Operating Temperature Range
Storage Temperature Range
Drain-Source Voltage
°C
°C
V
-40 to +125
30
Gate-Source Voltage
±12
V
ID
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
10
60
A
@TA=25℃
IDM
PD
@TA=25℃
1.4
W
℃
℃
Storage Temperature Range
TSTG
TJ
-55 to 150
-55 to 150
Operating Junction Teture Rang
Note: FS8601Hx cins a circuit that will prit from static discharge; but please take special
care that no exessive static electricity volage which exceeds the limit of the protection
circuiapplied to it.
z
Pulse se exceeding the aut voltage (VSS+12V) may cause damage to the IC.
Rev. 1.3
6/15
FS8601Hx
10. Electrical Characteristics
FS8601HA(VSS=0V, Ta=25°C unless otherwise specified)
PARAMETER
Supply Current
Power-Down Current
CONDITIONS
VDD=3.9V
VDD=2.0V
SYMBOL
IDD
Min
Typ
2.5
Max
5.2
1.0
UNIT
μA
μA
V
V
V
V
V
V
V
IPD
0.05
4.310
4.110
2.300
2.300
0.130
0.90
-0.09
8.0
Overcharge detection voltage
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
Over current detection voltage
Short circuit detection voltage
Charger over current detection voltage
Faulty charger detect voltage
Faulty charger recovery voltage
VOCU
VOCR
VODL
VODR
VOI1
VOI2
VCH
4.285
4.060
2.223
2.223
0.120
0.80
-0.11
5.5
4.335
4.160
2.377
2.377
0.140
1.00
-0.07
10.5
9.3
VDD=3.6V
VDD=3.6V
Vdet
Vrec
V
V
5.3
7.3
0
4
65
7.35
0.45
16.25
5.0
5.0
0.3
0
1
1.4
48.75
50.0
50.0
3.0
V
s
VST
TOC
TOD
TOI1
TOI2
det
Td1
0V charging prohibit
VDD=4.0V to 4.4V
VDD=3.0V to 2.0V
VDD=3.6V
Overcharge detection delay time
Overdischarge detection delay time
Over current detection delay time
Short circuit detection delay tim
Charger over current delay time
Overcharge timer reset delay time
Charge release delay ti
6.25
100
11.0
0.750
32.5
1
ms
ms
ms
ms
ms
ms
ms
VDD=3.6V
VDD=3.6V
Td2
Tdr1
16
1
Charge connection detdelay
N-MOSFET have low turn-oresistance
Drain-Source Breoltage
3
V
VGS=0V,ID
BVDSS
(BATT- to D12 /
Breakdown Voltagure
Coefficient
Reference to
ID=1
V/℃
mΩ
mΩ
mΩ
uA
0.1
36
39
48
ΔBVDSS/ΔTj
27
30
33
45
48
65
1
VGS==1A
VGS=3.5V,ID=1A
VGS=2.5V,ID=1A
VDS=20V,VGS
Static Source-Surce On-Resise
(BATT- to GND)
ON)
Drain-Source Leakage Current)
(BATT- to D12 / D12 to GND)
IDSS
(Tj=25℃)
Rev. 1.3
7/15
FS8601Hx
FS8601HD(VSS=0V, Ta=25°C unless otherwise specified)
PARAMETER
CONDITIONS
SYMBOL
Min
Typ
Max
UNIT
CURRENT CONSUMPTION
Supply Current
Power-Down Current
VDD=3.9V
VDD=2.0V
IDD
IPD
2.5
0.05
4.280
4.080
2.300
2.300
0.130
0.70
-0.100
8.0
5.5
1.0
μA
μA
V
V
V
V
V
V
V
Overcharge detection voltage
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
Over current detection voltage
Short circuit detection voltage
Charger over current detection voltage
Faulty charger detect voltage
Faulty charger recovery voltage
VOCU
VOCR
VODL
VODR
VOI1
VOI2
VCH
Vdet
4.255
4.030
2.200
2.200
0.120
0.60
-0.120
6.0
4.305
4.130
2.400
2.400
0.140
0.80
-0.080
10.0
8.8
VDD=3.6V
VDD=3.6V
V
V
Vrec
5.8
7.3
0.40
0.6
65
13.3
0.60
5.10
0.65
1
100
20.0
1.0
8.50
1.10
1.80
12.75
V
s
ms
ms
ms
ms
VST
0V charging prohibit
VDD=4.0V to 4.V
VDD=3.0V t2.0V
VDD=3.6V
Overcharge detection delay time
Overdischarge detection delay time
Over current detection delay time
Short circuit detection delay time
Charger over current delay time
TOC
TOD
TOI1
TOI2
Tdet
VDD=.6V
VDD=3.6V
N-MOSFET have low turn-on resistanc
Drain-Source Breakdown V
V
30
VGS=0V,ID=1mA
BVDSS
(BATT- to D12 / D12 to G
Breakdown Voltage Tempere
Coefficient
Reference to 25℃
ID=1mA
V/℃
mΩ
mΩ
mΩ
uA
0.1
36
39
48
ΔBVDSS/ΔTj
2
30
33
45
48
65
1
VGS=4.5V,
VGS=ID=1
VGS=2D=1A
VDS=20V,VGS=0V
Static Source-Souresistance
(BATT- to GND)
RSS(ON)
Drain-Source Leakage Current
(BATT- to D12 / D12 to GN
25℃
Rev. 1.3
8/15
FS8601Hx
MOSFET. The overcurrent condition returns to the
normal mode when the load is released or the
impedance between BATT+ and BATT- is larger than
150kΩ. The FS8601HX provides two overcurrent
detection levels (0.13V and 0.7V or 0.9V) with two
overcurrent delay time (TOI1 and TOI2)
corresponding to each overcurrent detection level.
11. Description of Operation
Normal Condition
If VODL<VCC<VOCU and VST<VCS<VOI1, M1 and
M2 are both turned on. The charging and
discharging processes can be operated normally.
Overcharge Protection
When the voltage of the battery cell exceeds the
overcharge detection voltage (VOCU) beyond the
overcharge delay time (TOC) period, charging is
inhibited by turning off of the charge control
MOSFET. The overcharge condition is released in
two cases:
Charge Detection after Overdischarge
Wen overdischarge occurs, the discharge control
MOSFET turns off and discharging is inhibited.
However, charging is still permitted through the
paasitic diode of MOSFET. Once the charger is
connected to the battery pack, the FS8601HX
immediately turns on all the timing gention and
detection circuitry. Chaging progresed if
the voltage ween CS and GND irge
detection shod voltage.
The voltage of the battery cell becomes ower han
the overcharge release voltage (VOCR) hrough
self-discharge.
The voltage of the battery cell falls below the
overcharge detection voltage (VOCU) and a load is
connected.
Power Down after Overharge
When overdischarge occursthe S8601HX will
enter into power-down mode, turning off all the
timing generation and detection circuitry to reduce
te quiescent current to 1.0μA (VCC=2.0V). At the
When the battery vis above VOCU, the
overcharge conditiot release even a load is
connected to the pack.
same time, the CS pin is pull-up to VCC through an
internal resistor.
Overdiotection
When he voltahe battery cell goelow e
overdischage detection voltage (VODnd the
overdscarge delay time (TOD) priodarging
is inhibitd by turning off the ischarge control
MOSFET.
Supersing charger voltage
By supervising the charge voltage, charging can be
ited instantly when a charger with overvoltage
onnvted. The charger voltage detection circuit
supervises the voltage between the VDD and CSI
pins. When this voltage exceeds Vdet(Vdet <
(VDD – VCSI)),regardless of the battery voltage,the
charge FET control pin output alow level(CSI
level)signal and the charge FET is turned off. When
the charger voltage drops to Vrec or lower, the
charger FET control output level is dependent on
battery voltage.
The default of overdischae delay time is 100ms.
Inhibition of discharging is mmediately released
when the voltage of the battery cell becomes hi
than overdischarge release voltage (VODR) throh
charging.
Overcurrent Protection
In normal mode, the FS861HX continuously
monitors the discharge currenby sensing the
voltage of CS pin. If the voe of CS pin exceeds
the overcurrent detection VOI1) beyond the
overcurrent delay ime (TOIod, the overcurrent
protection circit operates and discharging is
inhibited by turng off the discharge control
Note: When a battery is connected to FS8601HX
for the first time, it may not enter the normal
condition (dischargeable may not be enabled). In
this case, short the CS and VSS pins or connect
to a charger to restore to the normal condition.
Rev. 1.3
9/15
FS8601Hx
As the turn-on resistance of the external MOSFET
changes, the design of the overcurrent threshold
current changes accordingly.
12. Design Guide
Selection of External Control MOSFET
Because the overcurrent protection voltage is preset,
the threshold current for overcurrent detection is
determined by the turn-on resistance of the charge
and discharge control MOSFETs. The turn-on
resistance of the external control MOSFETs can be
determined by the equation: RON=VOIP/ (2 x IT) (IT
is the overcurrent threshold current). For example, if
the overcurrent threshold current IT is designed to
be 3A, the turn-on resistance of the external control
MOSFET must be 25mΩ. Be aware that turn-on
resistance of the MOSFET changes with
temperature variation due to heat dissipaon. It
changes with the voltage between gate and souce
as well. (Turn-on resistance of MOSFET inceases
as the voltage between gate and sorce decreaes).
Suppressing the Ripple and Disturbance
from Charger
To suppress the ripple and disturbance from charger,
connecting R1 and C1 to VCC is recommended.
Protection the CS pin
2 iused for latch-up protection when charger is
connected under overdischarge condition and
overstress protection at reverse connecting f a
charger.
Rev. 1.3
10/15
FS8601Hx
13. Timing Diagram
Overcharge Condition ÆLoad Discharging Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VC
VOI1
GND
VCH
TOC
TOC
Rev. 1.3
11/15
FS8601Hx
Overdischarge Condition Æ Charging by a Charger ÆNormal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VCC
VOI2
GD
VCH
D
Rev. 1.3
12/15
FS8601Hx
Over Current Condition Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VCC
VOI2
VI1
GND
TOI1
TOI2
Rev. 1.3
13/15
FS8601Hx
14. Package Outline
DFN-5
Rev. 1.3
14/15
FS8601Hx
15. Revision History
Version Date
Page
ALL
0
Description
New release
Rename Sign Head
Revise Drain-Source Voltage
1.0
1.1
2011/09/27
2012/02/10
6
1.2
1.3
2012/09/12
2014/01/09
14
4
Revise package outline
Revise VOI1 Specified Unit
Rev. 1.3
15/15
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