FS8820P [FORTUNE]
One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET;
| 型号： | FS8820P |
| 厂家： | 
Fortune Semiconductor |
| 描述： | One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET 电池 |
| 文件： | 总13页 (文件大小：1038K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REV. 1.8
FS8820P-DS-18_EN
JAN 2014
Datasheet
FS8820P
One Cell Lithium-ion/Polymer Battery Proection IC With ilt-in MOSFET
FS8820P
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F,No. 29-5, Sec. 2, Zhongzheng E. Rd.,
Danshui Dist., New Taipei City 251, Taiwan
Tel.：886-2-28094742
Fax：886-2-28094874
www.ic-fortune.com
This manual contains new t information. Fortune Semiconductor Corporation reserves the rights to
modify the prodct specification without further notice. No liability is assumed by Fortune Semiconductor
Corporation as a esult of the use of this product. No rights under any patent accompany the sale of the
product.
Rev. 1.8
2/13
FS8820P
1. General Description
3. Ordering Information
The FS8820P battery protection IC is designed to
protect lithium-ion/polymer battery from damage or
degrading the lifetime due to overcharge,
overdischarge, and/or overcurrent for one-cell
lithium-ion/polymer battery powered systems, such
as cellular phones.
The ultra-small package and less required external
components make it ideal to integrate the FS8820P
into the limited space of battery pack. The accurate
±50mV overcharging detection voltage ensures safe
and full utilization charging. The very low standby
current drains little current from the cell while in
storage.
FS8820P-T (TSSOP-8 Green-Package)
TEMPERATURE RANGE
-40°C~+85°C
4. Applications
z
Protection IC for One-Cell Lithium-Ion /
Lithium-Polymer Battery Pack
2. Features
z
z
z
With built-in N-MOSFET of low turn-on
resistance.
Reduction in Board Size de to Miniature
Package TSSOP-8 .
Protection IC
Ultra-Low uiescent Current at 3μA
(VV).
OverdischargeC
a=2.0V).
Overcharge Protection V
4.28V ± 25mV
Overdischartection Voltage
2.4V ± 100m
Overcurrent Protection Voltage
150mV ± 15mV
Auto Recovery function
z
MOSFET：
Rss(ON) ＜ 49mΩ
(VGS = 3.7V , ID = 1)
Rev. 1.8
3/13
FS8820P
5. Product Name List
Built-in
N-MOSFET
source to
source
Overcharge Overcharge Overdischarge Overdischarge Overcurrent
0V
Standby
detection
voltage
release
voltage
detection
voltage
release
detection
voltage
change function
function release
Model
Package
voltage
Ron
[RSS(ON)]
(mΩ)
[VOCP] (V) [VOCR] (V) [VODP] (V)
[VODR] (V)
[VOI1] (V)
AUTO
NO
< 49
FS8820P TSSOP-8 4.28±0.025 4.08±0.050
2.40±0.100
2.5±0.100
0.150±15mV
recovery
6. Pin Configuration and Package Marking Information
Pin No. Symbol
Description
1
2
3
4
5
6
8
GND
GND
VCC
VCC
CS
Ground in
Ground pin
Power suply, through a resis1)
Power supply, through a resisto(R1)
Input pin for current sense, charger detect
BATT- Connect to negative of charger or load
BATT- Connect to nee of charger or load
D12
Two MOSFET ommon drain connection pin
TSSOP-8
Top View
1
GND
GND
VCC
VCC
8
7
6
5
D12
BATT-
2
3
4
A：Year Code, A~Z & A ~ Z.
B：Week Code, A~Z & A ~ Z
CCC：Lot Code
BATT-
CS
D：Wire Code
Rev. 1.8
4/13
FS8820P
7. Functional Block Diagram
Charge Over
Current Detector
8. Typical Applition Circuit
Symbol
R1
Purpose
ESD protection.
For power fluctuaon.
Recommended
Remakes
100~470Ω
Resistance should be as small as
possible to avoid lowering of the
overcharge detection accuracy
caused by VDD pin current. Use
470Ω for better ESD protection.
C1
R2
For power fluctuation.
Protection for reverse
connection of a
charger.
0.1μF
1k~2kΩ
Select a resistance as large as
possible to prevent large current
when a charge is connected in
reverse.
Rev. 1.8
5/13
FS8820P
9. Absolute Maximum Ratings
(GND=0V, Ta=25°C unless otherwise specified)
Item
Symbol
VCC
VCS
Rating
GND-0.3 to GND+10
VCC -30 to VCC +0.3
-40 to +85
Unit
V
Input voltage between VCC and GND *
CS input pin voltage
V
°C
°C
V
Operating Temperature Range
Storage Temperature Range
Drain-Source Voltage
TOP
ST
-40 to +125
20
VDS
±12
Gate-Source Voltage
VG
V
ID
Continuous Drain Current
Pulsed Drain Current
6.5
20
@A=25℃
IDM
PD
@TA=25℃
Total Power Dissipation
1.4
W
℃
℃
Storage Temperature Range
TSTG
TJ
-55 to 150
-55 to 150
Operating Junction Teure Rang
Note: FS8820ntains a circuit that will protect it om satic discharge; but please take special care that no
exceelectricity or voltage wexceeds the limit of the protecton circuit will be applied to it.
Rev. 1.8
6/13
FS8820P
10. Electrical Characteristics
(Ta=25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS SYMBOL Min
Typ
2.5
Max
5.2
UNIT
μA
Supply Current
VCC=3.9V
VCC=2.0V
FS8820P
ICC
μA
1.8
4.5
Overdischarge Current
IOD
4.255
4.030
2.300
2.400
0135
0.60
4.280
4.080
2.400
2.500
0.150
0.70
4.305
4.130
2.500
0.80
Overcharge Protection Voltage
Overcharge Release Voltage
Overdischarge Protection Voltage
Overdischarge Release Voltage
Overcurrent Protection Voltage
Short Current Protection Volage
VOCP
VOCR
VODP
VODR
V
V
V
V
VOIP
（VOI
V
VSIP
（VOI2）
VCC=3.6V
V
Charger over current detection
voltage
VDD=3.6V
VCOIP
Vdet
Vrec
VST
-0.120 -0.0 0.080
V
Faulty charger deteltage
Faulty chargery voltage
0V charging pro
6.0
5.8
8.
7.3
10.0
8.8
V
V
0.65
130
65
0.95
200
100
20.0
1.0
1.25
280
V
Ovcharge Delay Time
TOC
TOD
TOI1
TOI2
Tdet
ms
ms
ms
ms
ms
140
Overdischarge Delay Time
Overcurrent Delay Time
Overcurrent Delay Time (2)
Charge over current delay time
VCC=3.6V to 2.0V
VCC=3.6V
13.3
0.60
5.10
26.5
1.80
12.75
VCC=3.6V
8.50
VCC=3.6V
N-MOSFET have low turn-on resis
Drain-Source Breakdown Voltage
VGS=V,ID=250μA
BVDSS
20
V
(BATT- to D12 / D12 to GND)
Breakdown Voltage Temperature
Coefficient
Reference to 25℃,
ΔBVDSS/Δ
V/℃
0.1
41
51
ID=1mA
Tj
Static Source-Source
On-Resistance (BATT- to
Static Source-Source
On-Resistance BATT- to GND)
Drain-Source Leakae Current)
(BATT- to D12 / D12 to GND)
mΩ
mΩ
uA
VGS=3.7V,ID=1A
VGS=2.7V,ID=1A
VDS=16V,VGS=0V
49
70
1
RSS(ON)
IDSS
(Tj=25℃)
Rev. 1.8
7/13
FS8820P
11. Description of Operation
Overcurrent Protection
Normal Condition
If VODP<VCC<VOCP and VCH<VCS<VOI1, M1
and M2 are both turned on. The charging and
discharging processes can be operated normally.
In normal mode, the FS8820P continuously monitors
the discharge current by sensing the voltage of CS
pin. If the voltage of CS pin exceeds the overcurrent
protection voltage (VOIP) beyond the overcurrent
delay time (TOI1) period, the overcurrent protection
circuit operates and discharging is inhibited by
turning off the discharge control MOSFET. The
overcurrent condition returns to the normal mode
when the load is released or the impedance betwee
BATT+ and BATT- is larger than 500kΩ. The
FS8820P provides two overcurrent detection levels
(0.15V and 1.35V) with two overcurrent delay tie
(TOI1 and TOI2corresponding to each ocurrent
detection level.
Overcharge Protection
When the voltage of the battery cell exceeds the
overcharge protection voltage (VOCP) beyond the
overcharge delay time (TOC) period, charging is
inhibited by turning off of the charge control
MOSFET. The overcharge condition is released in
two cases:
The voltage of the battery cell becomes lower than
the overcharge release voltage (VOCR) thrugh
self-discharge.
CharDetection after Overdische
The voltage of the battery cell flls below the
overcharge protection voltage (VOCP) and a load is
connected.
When the battery voltagabove VOCP, the
overcharge condition release even a load is
connected to the pac
Wen overdischarge occurs, the discharge control
MOSFET turns off and dischis inhibited.
However, charging is still pered through the
parasitic diode of MOSFET. Once the charger is
connected to the batterpack, he FS8820P
immediately turns on all the timing generation and
detection circuitr. Charging progress is sensed if
the voltage between CS and GND is below charge
detection told voltage (VCH).
Overdiotection
When the volbattery cell goes below
overdscharge protection voltage (VODond
the verdicharge delay time (TOD) p
discharng is inhibited by turning ff the dcharge
control MOSFET.
Ato Power Down recovery
TIC continues to operate even after the
rdischarge state has been entered. The
bttery voltage rising to the overdischarge
release voltage(VODR) or higher is the only
required condition for the IC to return to the
normal state.
The default of overdischelay time is 10ms.
Inhibition of discharging is immediately released
when the voltage of the battery cell becomes high
than overdischarge release voltage (VODR) thro
charging.
Rev. 1.8
8/13
FS8820P
12. Design Guide
Protection the CS pin
Suppressing the Ripple and Disturbance
from Charger
R2 is used for latch-up protection when charger is
connected under overdischarge condition and
overstress protection at reverse connecting of a
charger.
To suppress the ripple and disturbance from charger,
connecting R1 and C1 to VCC is recommended.
Rev. 1.8
9/13
FS8820P
13. Typical Operating Characteristics
Supply Current
Overdischarge Current
3.8
2.25
2.2
3.6
3.4
3.2
3
2.15
2.1
ICC
IOD
2.05
2
.95
1.9
-45℃ -35℃ -15℃ 5℃
25℃ 45℃ 65℃ 85℃
-45℃ -35℃ -15℃ 5℃
25℃ 45℃ 65℃ 85℃
Overdicharge Protection Voltage
Overcharge Protection Voltage
2.376
2.374
2.372
2.37
4.29
4.285
4.28
4.275
4.27
2.368
66
2.364
2.362
2.36
VODP
VOCP
4.265
4.26
4.255
2.3
-45℃ -35℃ -15℃ 25℃ 45℃ 65℃ 85℃
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃
Static Souce-Source On-Resistance
(VG=2.7V ID=1A)
ource On-Resistance
=3.7V ID=1A)
70
60
50
0
10
0
0
5
40
30
20
10
0
Rss(on)2
Rss(on)1
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃
-45℃ -35℃ -15℃ 5℃ 25℃ 45℃ 65℃ 85℃
Overcurrent Protection Vo
156
155.5
155
154.5
154
VOI1
153.5
153
-45℃ -35℃ 155℃ 25℃ 45℃ 65℃ 85℃
Rev. 1.8
10/13
FS8820P
14. Timing Diagram
Overcharge Condition ÆLoad Discharging Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
VOI1
GND
VCH
TOC
TOC
Overdindition Æ CharginCharger ÆNormal Condition
Charger
oad
VOCP
VOCR
VODR
VODP
VCC
VOI2
GND
VCH
TOD
TOD
Rev. 1.8
11/13
FS8820P
Over Current Condition Æ Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
VOI2
VOI1
GND
TOI1
TOI2
Rev. 1.8
12/13
FS8820P
15. Package Outline
TSSOP-8
16. Revision Hist
Version Date
Page
All
Description
1.0
1.1
2010/12/23
2011/01/17
New rel
2.13
Add DF5 Package
Typical Operating characteristics
se VOI1 150±15mV
1.2
2011/03/02
4,8,11
evise VST 0.95V±30mV
Revise DFN-5 Pin1:NC
Revise BVDSS：20V
1.3
1.4
1.5
2011/03/08
2011/03/17
2011/04/06
8
5
Revise Typical Application Circuit information
Delete Package DFN-5
Revise RDS(ON)
1.6
1.7
2011/05/20
2011/06/09
4, 6
VGS：3.7V MAX：49mΩ VGS：2.7V MAX：70mΩ
1.8
2014/01/09
4
Revise VOI1 Specified Unit
Rev. 1.8
13/13
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