FMBT5551 [FORMOSA]
600mA Silicon NPN Epitaxial Planar Transistor; 600毫安硅NPN外延平面晶体管
| 型号： | FMBT5551 |
| 厂家： | 
FORMOSA MS |
| 描述： | 600mA Silicon NPN Epitaxial Planar Transistor |
| 文件： | 总8页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
List
1
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
2
2
2
2~3
4~5
6
6
6
7
8
8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 1
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
600mA Silicon NPN Epitaxial Planar
Package outline
Transistor
SOT-23
Features
• High collector-emitterbreakdien voltage.
(BVCEO = 140V~ 160V@IC=1mA)
• This device is designed for general purpose high voltage
(B)
(A)
(C)
amplifiers and gas discharge display driving.
• Epitaxial planar die construction.
• Complememntary PNP type available (FMBT5401)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
0.108 (2.75)
0.083 (2.10)
• Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H.
0.051 (1.30)
0.035 (0.89)
Mechanical data
Dimensions in inches and (millimeters)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
CONDITIONS
Symbol FMBT5550
FMBT5551 UNIT
VCBO
VCEO
VEBO
IC
V
V
dc
160
140
180
160
dc
V
dc
6.0
mAdc
600
Thermal Characteristics
Characteristics
CONDITIONS
Symbol
PD
UNIT
mW
mW/OC
OC/W
mW
mW/OC
Maximum
225
TA = 25OC
Total device dissipation FR-5 board
(1)
Derate above 25OC
Junction to ambient
TA = 25OC
PD
1.8
Thermal resistance
RθJA
PD
556
300
Total device dissipation alumina
substrate(2)
Derate above 25OC
PD
2.4
OC/W
Thermal resistance
Operating temperature
Junction to ambient
RθJA
TJ
417
-55 ~ +150
oC
Storage temperature
TSTG
-65 ~ +150
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 2
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
Characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
CONDITIONS
Ic = -100µAdc, IE = 0
Symbol
V(BR)CBO
Types
Max.
UNIT
Min.
-
-
-
-
-
160
FM5550
FM5551
FM5550
FM5551
Both Types
FM5550
FM5551
FM5550
FM5551
Both Types
Collector-Base breakdown voltage
V
dc
180
Ic = 1.0mA c, IB = 0
d
140
V
V
dc
dc
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
V(BR)CEO
V(BR)EBO
160
IE = 10µAdc, IC = 0
6.0
VCB = 100Vdc, IE = 0
100
50
-
-
-
-
-
nAdc
VCB = 120Vdc, IE = 0
ICBO
VCB = 100Vdc, IE = 0, TA = 100OC
VCB = 100Vdc, IE = 0, TA = 100OC
VEB = 4.0Vdc, IC = 0
Collector cutoff current
Emitter cutoff current
100
50
µAdc
IEBO
nAdc
50
On characteristics(3)
PARAMETER
CONDITIONS
Symbol
Types
Max.
UNIT
Min.
60
-
-
FM5550
FM5551
FM5550
FM5551
FM5550
FM5551
Both Types
FM5550
FM5551
Both Types
FM5550
FM5551
Ic = 1.0mAdc, VCE = 5.0Vdc
80
250
60
80
20
DCcurrent gain
Ic = 10mAdc, VCE = 5.0Vdc
hFE
-
250
-
-
Ic = 50mA, VCE = 10Vdc
Ic = 10mAdc, IB = 1.0mAdc
Ic = 50mAdc, IB = 5.0mAdc
Ic = 10mAdc, IB = 1.0mAdc
Ic = 50mAdc, IB = 5.0mAdc
30
-
0.15
-
-
-
-
-
0.25
0.20
1.0
VCE(sat)
V
V
dc
dc
Collector-Emitter saturation voltage(3)
Base-Emitter saturation voltage(3)
VBE(sat)
1.2
1.0
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 3
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
http://www.formosams.com/
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
TEL:886-2-22696661
Page 4
FAX:886-2-22696141
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
http://www.formosams.com/
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
TEL:886-2-22696661
Page 5
FAX:886-2-22696141
High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Pinning information
Formosa MS
Pin
Simplified outline
Symbol
C
C
PinB Base
PinC Collector
PinE Emitter
B
E
B
E
Marking
Type number
Marking code
FMBT5550
FMBT5551
M1F
G1
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 6
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SOT-23
Item
Tolerance
Carrier width
A
B
C
d
D
D1
D
D1
D2
E
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
-
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
-
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
F
P
P0
P1
T
W
W1
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
Page.
C
8
Page 7
High Voltage NPN Epitaxial Planar Transistor
Formosa MS
FMBT5550 / FMBT5551
Reel packing
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
COMPONENT
SPACING
APPROX.
BOX
(pcs)
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
GROSS WEIGHT
(kg)
CARTON
(pcs)
(m/m)
3000
4.0
30,000
178
383*262*387
240,000
11.6
183*183*123
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231108
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 8
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