FMBTA42 [FCI]
NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR; NPN硅晶体管高压晶体管
| 型号： | FMBTA42 |
| 厂家： | 
FIRST COMPONENTS INTERNATIONAL |
| 描述： | NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Description
Mechanical Dimensions
SOT-23
Dimension in Inch
□ JUNCTION TEMPERATURE -----------------------------
□ STORAGE TEMPERATURE ------------------------------
□ MAX POWER DISSIPATION Ta=25℃ -----------------
□ MAX VOLTAGE AND CURRENT Ta=25℃
+150℃ MAX
-55~ + 150℃
250mW
VCBO COLLECTOR TO BASE VOLTAGE-------------
VCEO COLLECTOR TO EMITTER VOLTAGE--------
VEBO EMITTER TO BASE VOLTAGE------------------
IC COLLECTOR CURRENT--------------------------------
300V
300V
6.0V
500mA
Characteristics (Ta=25℃)
Collector-Emitter Voltage@ Ic=10mA
Vceo
300V
300V
Collector-Base Breakdown@ Voltage Ic=100uA Vcbo
Emitter- base Breakdown Voltage@ Ie =10uA
Collector Cutoff Current@ Vcb=200V
Emitter cutoff Current@ Vce=6V
Ic=20mA, Ib=2mA
Vebo
Icbo
Iebo
6V
100nA
100nA
Max
Max
Vce(sat) Max 500mV
Vbe(on) Max 900mV
Ic=20mA, Ib=2mA
Static Forward Current Transfer Ratio
Ic=1mA, Vce=10V
hFE1
hFE2
hFE3
Min
Min
Min
25
40
50
Ic=10mA, Vce=10V
Ic=30mA, Vce=10V
Current-Gain-bandwidth Product
@Ic=10mA, Vce=20V, f=100MHz
fT
Min 50MHz
Max 3pF
Output Capacitance @ Vcb=20V, f=1MHz
Cob
相关型号：
©2020 ICPDF网 联系我们和版权申明