FMBTA05 [FORMOSA]
Drive NPN Transistor;
| 型号： | FMBTA05 |
| 厂家： | 
FORMOSA MS |
| 描述： | Drive NPN Transistor |
| 文件： | 总9页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
List
1
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
2
2
2
2~3
4~5
6
6
6
7
8
8
9
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 1
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
Drive NPN Transistor
Package outline
SOT-23
Features
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex. FMBTA05-H.
(B)
(A)
(C)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
0.051 (1.30)
0.035 (0.89)
Mechanical data
Dimensions in inches and (millimeters)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Collector
C
• Mounting Position : Any
• Weight : Approximated 0.008 gram
B
Base
A
Emitter
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
CONDITIONS
Symbol
VCBO
VCEO
VEBO
IC
UNIT
Vdc
FMBTA05
FMBTA06
60
60
80
80
Vdc
Vdc
4.0
mAdc
500
Thermal Characteristics
Characteristics
CONDITIONS
Symbol
UNIT
mW
mW/OC
Max
TA = 25OC
PD
PD
225
1.8
Total device dissipation FR-5 board
(1)
Derate above 25OC
Thermal resistance
Junction to ambient
TA = 25OC
Derate above 25OC
RθJA
PD
556
300
2.4
OC/W
mW
mW/OC
Total device dissipation alumina
substrate(2)
PD
OC/W
Thermal resistance
Operating temperature
Junction to ambient
RθJA
TJ
417
-55 ~ +150
oC
Storage temperature
TSTG
-65 ~ +150
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
3. Pulse test: pulse width >=300µs, duty cycle<=2.0%
4. fT is defined as the frequency at which hfe extrapolates to unity.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 2
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
Characteristics (AT TA=25oC unless otherwise noted)
Off Characteristics
PARAMETER
CONDITIONS
Ic = 100µAdc, IE = 0
Symbol
V(BR)CBO
Types
Max.
UNIT
Vdc
Min.
60
80
60
80
4.0
-
-
-
FMBTA05
FMBTA06
FMBTA05
FMBTA06
Collector-Base breakdown voltage
Ic = 1.0mAdc, IB = 0
-
Vdc
Collector-Emitter breakdown voltage(3)
V(BR)CEO
-
Emitter-Base breakdown voltage
Collector Cutoff Current
V(BR)EBO
ICES
Vdc
IE = 100µAdc, IC = 0
VCE=60Vdc, IB=0
-
µAdc
0.1
0.1
0.1
VCB = 60Vdc, IE = 0
VCB = 80Vdc, IE = 0
FMBTA05
FMBTA06
-
ICBO
Collector cutoff current
µAdc
-
On Characteristics
PARAMETER
CONDITIONS
Symbol
hFE
Max.
UNIT
-
Min.
Ic = 10mAdc, VCE = 1.0Vdc
Ic = 100mAdc, VCE = 1.0Vdc
Ic = 100mAdc, IB = 10mAdc
Ic = 100mAdc, VCE = 1.0Vdc
100
-
-
DCcurrent gain
100
VCE(sat)
VBE(on)
Vdc
Vdc
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
-
-
0.25
1.2
Small Signal Characteristics
PARAMETER
CONDITIONS
Symbol
fT
Max.
-
UNIT
MHz
Min.
100
Ic = 10mA, VCE = 2.0V,
f=100MHz
Current Gain Bandwidth Product (4)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 3
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
TURN-ONTIME
TURN-OFF TIME
V
CC
V
CC
+V
BB
-1.0 V
+40 V
+40 V
s
5.0u
100
R
L
100
R
L
OUTPUT
OUTPUT
+10 V
V
in
R
B
V
in
R
B
0
-
-
t = 3.0 n s
r
6.0 pF
* C 6.0 pF
* C
S
S
5.0uF
5.0 uF
100
100
5.0us
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors
For PNP T
est Circuits, Reverse All V
oltage Polarities
FIG1. Switching Time Test Circuits
300
200
V
J
= 2.0 V
CE
T = 25 C
100
70
50
30
2.0 3.0 5.0 7.0 10
20 30
50 70 100
200
I , COLLECT
OR CURRENT (mA)
C
FIG2. Current-Gain
Bandwidth Product
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 4
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
80
1.0 k
700
500
T = 25 C
J
60
t
s
40
300
200
C
ibo
20
100
70
t
f
50
10
8.0
V
C
= 40 V
CC
/I = 10
B
30
20
I
t
r
I
= I
B2
C
obo
6.0
B1
t @ V
= 0.5 V
d
BE(of
f)
T = 25 C
J
4.0
10
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
5.0 7.0 10
20 30
50 70 100
200 300 500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECT
OR CURRENT (mA)
C
FIG3. Capacitance
FIG4. Switching Time
1.0
400
200
T = 25 C
J
T = 125C
J
0.8
0.6
V
CE
= 1.0 V
= 10
/I
B
V
@ I
BE(sat)
C
25 C
V
@ V = 1.0 V
BE(on)
CE
-55 C
0.4
0.2
0
100
80
60
= 10
@ I /I
B
C
V
CE(sat)
40
0.5 1.0 2.0
5.0 10 20
50
100 200
500
0.5 1.0 2.03.0 5.0 10
20 30 50 100 200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
"
"
FIG6. ON Voltages
FIG5. DC Current Gain
1.0
0.8
0.6
-0.8
T = 25 C
J
-1.2
-1.6
-2.0
I =
I =
I =
I =
500 mA
C
C
C
C
250 mA
100 mA
50 mA
θ
for V
0.4
0.2
0
VB
BE
I =
10 mA
C
-2.4
-2.8
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50
0.5 1.0 2.0
5.0 10
20
50
100 200
500
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
FIG7. Collector Saturation
Region
FIG8. Base-Emitter Temperature
Coefficient
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 5
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
Pinning information
Pin
Simplified outline
Symbol
C
C
PinB Base
PinC Collector
PinE Emitter
B
E
B
E
Marking
Type number
Marking code
FMBTA05
FMBTA06
1H
1GM
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 6
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SOT-23
Item
Tolerance
Carrier width
A
B
C
d
D
D1
D
D1
D2
E
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
-
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
-
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
F
P
P0
P1
T
W
W1
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
Page.
C
9
Page 7
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
Reel packing
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
COMPONENT
SPACING
APPROX.
BOX
(pcs)
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
GROSS WEIGHT
(kg)
CARTON
(pcs)
(m/m)
3,000
4.0
30,000
183*183*123
178
382*262*387
240,000
11.6
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
TL
Ramp-up
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 8
Drive NPN Transistor
Formosa MS
FMBTA05 / FMBTA06
High reliability test capabilities
Item Test
Conditions
1. Steady State Operating Life
TA=25°C PD=225mW Test Duration:1000hrs
2. High Temperature Reverse Bias
3. Temperature Cycle
4. Autoclave
Tj=150℃,VCE=80% related volage,Test Duration:1000hrs
-55℃(15min) to 150℃(15min)Air to Air Transition Time<20sec Test Cycles:1000cycle
P=2atm Ta=121℃ RH=100% Test Duration:96hrs
5. High Temperature Storage Life
6. Solderability
Ta=150℃ Test Duration:1000hrs
245℃,Test Duration:5sec
7. High Temperature High Humidity Reverse
Bias
Ta=85℃, 85%RH, VCE=80% related volage,Test Duration:1000hrs
260℃,Test Duration:10sec
8. Resistance to Soldering Heat
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231111
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 9
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