LP6836SOT343 [FILTRONIC]
PACKAGED MEDIUM POWER PHEMT; 封装介质功率PHEMT
| 型号： | LP6836SOT343 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | PACKAGED MEDIUM POWER PHEMT |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
LP 6 8 3 6 S OT3 4 3
P ACKAGED MEDIUM P OWER P HEMT
·
FEATURES
¨
¨
¨
¨
0.5 dB Noise Figure at 2 GHz
19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
70% Power-Added-Efficiency
·
DES CRIP TION AND AP P LICATIONS
The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range.
It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam
photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also
known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
·
ELECTRICAL S P ECIFICATIONS @ TAm b ie n t = 2 5 °C
Parameter
Symbol
IDSS
Test Conditions
Min
80
Typ Max Units
Saturated Drain-Source Current
Power at 1-dB Compression
VDS = 2 V; VGS = 0 V
125
mA
dBm
dB
P-1dB
G-1dB
f=2GHz; VDS = 3 V; IDS = 50% IDSS
f=2GHz; VDS = 3 V; IDS = 50% IDSS
18
19
20
Power Gain at 1-dB
Compression
18
Power-Added Efficiency
PAE
NF
f=2GHz; VDS = 3 V; IDS = 50% IDSS
;
70
%
POUT = 19.5 dBm
Noise Figure
f=2GHz; VDS = 3V; IDS = 25% IDSS
f=2GHz; VDS = 3V; IDS = 50% IDSS
VDS = 2 V; VGS = 0 V
VGS = -5 V
0.5
0.7
100
1
dB
dB
mS
mA
V
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
GM
IGSO
VP
75
10
VDS = 2 V; IDS = 2 mA
IGS = 2 mA
-0.25
11
-2.0
Gate-Source Breakdown
Voltage Magnitude
|VBDGS
|
15
16
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD
|
IGD = 2 mA
12
V
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/20/01
Em a il: sales@filss.com
PRELIMINARY DATA SHEET
LP 6 8 3 6 S OT3 4 3
P ACKAGED MEDIUM P OWER P HEMT
·
ABS OLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
Symbol
Test Conditions
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
—
Min
Max
7
Units
V
VDS
VGS
IDS
-3
V
IDSS
5
mA
mA
mW
ºC
IG
RF Input Power
PIN
60
Channel Operating Temperature
Storage Temperature
TCH
TSTG
175
175
-65
ºC
Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.
·
HANDLING P RECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
·
·
AP P LICATIONS NOTES & DES IGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
P ACKAGE OUTLINE
(dimensions in mm)
SOURCE
GATE
DRAIN
SOURCE
All information and specifications are subject to change without notice.
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/20/01
Em a il: sales@filss.com
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