LP6872 [FILTRONIC]
0.5W POWER PHEMT; 0.5W功率PHEMT
| 型号： | LP6872 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | 0.5W POWER PHEMT |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LP 6 8 7 2
0 .5 W POWER P HEMT
DRAIN
BOND
PAD (2X)
·
FEATURES
¨
27 dBm Output Power at 1-dB
Compression at 18 GHz
9.5 dB Power Gain at 18 GHz
55% Power-Added Efficiency
SOURCE
BOND
PAD (2x)
¨
¨
GATE
BOND
PAD (2X)
DIE SIZE: 14.6X19.7 mils (370x500 mm)
DIE THICKNESS: 3.0 mils (75 mm)
BONDING PADS: 1.9X2.4 mils (50x60 mm)
·
DES CRIP TION AND AP P LICATIONS
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 mm by 720 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation.
Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital
radio transmitters.
·
ELECTRICAL S P ECIFICATIONS @ TAm b ie n t = 2 5 °C
Parameter
Symbol
IDSS
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
Min
180
25
Typ
245
27
Max
Units
mA
dBm
dB
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
260
P-1dB
G-1dB
PAE
IMAX
GM
8
9.5
55
%
385
220
5
mA
mS
mA
V
175
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
40
VP
VDS = 2 V; IDS = 4 mA
IGS = 4 mA
-0.25
-10
-1.2
-13
-2.0
Gate-Source Breakdown
Voltage Magnitude
|VBDGS
|
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD
|
IGD = 4 mA
-10
-14
70
V
Thermal Resistivity
frequency=18 GHz
QJC
°C/W
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/18/01
Em a il: sales@filss.com
LP 6 8 7 2
0 .5 W POWER P HEMT
·
ABS OLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
12
V
TAmbient = 22 ± 3 °C
Gate-Source Voltage
Drain-Source Current
Gate Current
VGS
IDS
-4
2xIDSS
35
V
mA
mA
mW
ºC
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
—
IG
RF Input Power
PIN
300
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
TCH
TSTG
PTOT
175
-65
175
ºC
1.76
W
TAmbient = 22 ± 3 °C
Notes:
·
·
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT º (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
·
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 1.76W – (0.0117W/°C) x THS
where THS = heatsink or ambient temperature.
·
·
·
HANDLING P RECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
AS S EMBLY INS TRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
AP P LICATIONS NOTES & DES IGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/18/01
Em a il: sales@filss.com
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