LP6872P100 [FILTRONIC]
Packaged 0.5W Power PHEMT; 包装0.5W功率PHEMT
| 型号： | LP6872P100 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | Packaged 0.5W Power PHEMT |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Filtronic
Solid State
LP6872P100
Packaged 0.5W Power PHEMT
GATE
FEATURES
•
+27 dBm Typical Power at 15 GHz
•
11 dB Typical Power Gain at 15 GHz
•
•
Low Intermodulation Distortion
SOURCE
50% Power-Added-Efficiency
•
Color-coded by IDSS range
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
µ
µ
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 720 m Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si3N4
passivation and is available in die form.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters. Space level screening to FSS JANS grade is also available.
The LP6872-P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS
PARAMETERS
MIN
TYP
MAX
UNITS
IDSS
Saturated Drain-Source Current
VDS = 2V VGS = 0V
LP6872-P100-1 BLUE
LP6872-P100-2 GREEN
LP6872-P100-3 RED
180
207
234
195
220
245
206
233
260
mA
P1dB
G1dB
Output Power at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
Power Gain at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
f
f
= 15 GHz
= 15 GHz
25.5
8.0
27.0
dBm
9.5
50
dB
%
Power-Added Efficiency
ηADD
IMAX
GM
Maximum Drain-Source Current
Transconductance
VDS = 2V VGS = +1V
VDS = 2V VGS = 0V
VDS = 2V IDS = 4mA
VGS = -5V
385
220
-1.2
10
mA
mS
V
170
VP
Pinch-Off Voltage
-0.25
-2.0
50
IGSO
BVGS
BVGD
Gate-Source Leakage Current
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
µ
A
IGS = 4mA
-12
-12
-15
-16
V
IGD = 4mA
V
Get Package Model
DSS-033 WF
Phone:
Internet: http://www.filtronicsolidstate.com
Fax:
(408) 988-1845
(408) 970-9950
Filtronic
Solid State
LP6872P100
Packaged 0.5W Power PHEMT
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED CONTINUOUS
OPERATING LIMITS
(25°C)
PARAMETER
SYMBOL
VDS
VGS
IDS
RATING1
12V
SYMBOL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RATING2
8V
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
VDS
-4V
VGS
IDS
-1V
2 x IDSS
30 mA
300 mW
0.8 x IDSS
8 mA
IG
IG
PIN
RF Input Power
PIN
RF Input Power
150 mW
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Power Dissipation
TCH
Channel Temperature
Storage Temperature
Power Dissipation
Gain Compression
°
°
150 C
175 C
TSTG
PT
°
°
-65/175 C
1.7W3,4
-20/50 C
1.4 W3,4
8 dB
GXdB
NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
≡
3. Power Dissipation defined as: PT (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and
PIN = RF input power.
°
4. Power Dissipation to be de-rated as follows above 25 C:
°
Absolute Maximum: PT = 1.7W - (11mW/ C) x THS
°
Recommended Continuous Operating: PT = 1.4W - (11mW/ C) x THS
where THS = heatsink or ambient temperature.
5. Specifications subject to change without notice.
HANDLING PRECAUTIONS:
Care should be exercised during handling to avoid damage to the devices. Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be
treated as Class 1A (0-500V), and further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
APPLICATIONS NOTES AND DESIGN DATA:
Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5” diskette, or may be down-loaded
from our Web Page.
PACKAGE OUTLINE
: (DIMENSIONS IN INCHES)
0.256
0.062
0.098
0.065
0.024
0.098
0.035
0.240
0.335
0.020
0
Get Package Model
DSS-033 WF
Phone:
Internet: http://www.filtronicsolidstate.com
Fax:
(408) 970-9950
(408) 988-1845
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