FPD6836P70_1 [FILTRONIC]
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT; 低噪声高频PACKAGED PHEMT
| 型号： | FPD6836P70_1 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | LOW NOISE HIGH FREQUENCY PACKAGED PHEMT |
| 文件： | 总9页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet v3.0
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
`
PACKAGE:
FEATURES:
•
•
•
•
•
•
22 dBm Output Power (P1dB)
15 dB Power Gain (G1dB) at 5.8 GHz
0.8 dB Noise Figure at 5.8 GHz
32 dBm Output IP3 at 5.8 GHz
45% Power-Added Efficiency at 5.8 GHz
Useable Gain to 18 GHz
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface
TYPICAL APPLICATIONS:
mountable
pseudomorphic
packaged
High
depletion
Electron
mode
Mobility
•
•
•
•
Gain blocks and medium power stages
WiMax (2-11GHz)
WLAN 802.11a (5.8GHz)
Transistor (pHEMT) optimised for low noise,
high frequency applications.
Point-to-Point Radio (to 18GHz)
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression
Small Signal Gain
SYMBOL
CONDITIONS
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
MIN
TYP
22
MAX
UNITS
dBm
dB
P1dB
SSG
14
16
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 55mA
POUT = P1dB
45
%
Maximum Stable Gain (S21/S12)
f = 12 GHz
MSG
VDS = 5 V; IDS = 55mA
15
12
f = 18 GHz
Noise Figure
NF
VDS = 5 V; IDS = 55mA,
0.8
32
dB
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 55mA
POUT = 10 dBm SCL
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
IDSS
IMAX
VDS = 1.3 V; VGS = 0 V
90
105
215
140
1
135
mA
mA
mS
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
GM
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
10
µA
V
|VP|
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.36mA
0.7
12
1.0
14
1.3
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
|VBDGS|
|VBDGD|
RθJC
V
IGD = 0.36 mA
14.5
16
V
275
°C/W
Note: TAMBIENT = 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
SYMBOL
VDS
TEST CONDITIONS
-3V < VGS < +0V
ABSOLUTE MAXIMUM
8V
VGS
0V < VDS < +8V
-3V
IDS
For VDS < 2V
IDSS
IG
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
2 or more Max. Limits
10mA
2
RF Input Power
PIN
16dBm
175°C
Channel Operating Temperature
Storage Temperature
TCH
TSTG
PTOT
-40°C to 150°C
550mW
80%
Total Power Dissipation
3
Simultaneous Combination of Limits
Notes:
1TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
4Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT
,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 550mW - (1/ RθJC) x TPACK
where TPACK= source tab lead temperature above 22°C
Example: For a 65°C carrier temperature: PTOT = 550mW – (3.6 x (65 – 22)) = 323mW
BIASING GUIDELINES:
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate.
•
•
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices such as the FPD6836P70.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B
bias of 25-33% IDSS offers an optimised solution for NF and OIP3.
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
TYPICAL FREQUENCY RESPONSE
FPD6836P70 Bias VD= 5V, ID= 50mA
FPD6836P70 Biased @ VD = 5V ID = 55mA
5
30
MSG
S21
4.5
4
25
20
15
10
5
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
Frequency (GHz)
Frequency (GHz)
NOTE: Tuned Noise figure variation against frequency is shown above. The devices were biased
nominally at VDS = 5V, IDS = 50mA. The test devices were tuned for minimum noise figure using tuners at
the device input and output ports.
TYPICAL RF PERFORMANCE
Drain Efficiency and PAE
Power Transfer Characteristics
VDS = 5V, IDS = 55mA at f = 5.8GHz
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-0.50
23.0
21.0
19.0
17.0
15.0
13.0
11.0
9.0
PAE
Eff.
Pout (dBm)
Comp Point
-3
-1
1
3
5
7
9
11
13
-3
-1
1
3
5
7
9
11
13
Input Power (dBm)
Input Power (dBm)
Typical Intermodulation Performance
VDS = 5V, IDS = 55mA at f = 5.8GHz
12
10
8
-38.00
-43.00
-48.00
-53.00
-58.00
Pout (dBm)
3rds (dBc)
NOTE: Typical Power, Efficiency and
Intermodulation is shown above. The
devices were biased nominally at VDS
= 5V, IDS = 55mA at a test frequency of
5.8 GHz. The test devices were Tuned
using slide tuners at the input and the
output ports of the device.
6
4
2
-10.3
-9.3
-8.3
-7.4
-6.3
-5.3
-4.4
-3.4
-2.4
Inpur Power (dBm)
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
TEMPERATURE RESPONSE:
FPD6836P70 Intermodulation Variation over Temperature
FPD6836P70 Gain & Power Variation over Temperature
VDS = 5.0V IDS = 55mA at f = 5.8GHz
VDS = 5.0V IDS = 55mA at f = 5.8GHz
-30.00
-35.00
-40.00
-45.00
-50.00
19.00
18.00
17.00
16.00
15.00
14.00
22.00
21.00
20.00
19.00
18.00
17.00
16.00
15.00
14.00
13.00
12.00
IM3
SSG
P1dB
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature (C)
Temperature (C)
NOTE: Typical power, gain and Inter-modulation variation over temperature is shown above. The devices
were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz on eval board. The eval
board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical
number due to the change in matching.
NOISE PARAMETERS:
Bias 5V, 50mA
Freq
(GHz)
Rn/50
Mag
Angle
0.90
1.80
2.40
2.60
2.80
3.20
4.00
5.00
5.50
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
0.747
0.623
0.795
0.640
0.670
0.617
0.542
0.465
0.431
0.366
0.262
0.188
0.135
0.162
0.183
0.270
0.343
0.431
0.573
15.70
24.95
37.45
47.15
47.90
51.20
68.70
85.00
91.10
101.15
122.10
153.60
-165.60
-126.80
-85.95
-68.40
-50.25
-43.95
-25.80
0.165
0.176
0.158
0.159
0.160
0.156
0.141
0.120
0.114
0.107
0.096
0.100
0.121
0.138
0.187
0.239
0.355
0.461
0.604
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
REFERENCE DESIGN 5.15 TO 5.85 GHZ:
FREQUENCY
GHZ
5.5
FPD6836P70 5.5GHz Eval Board Biased @ 5V, 55mA
20
15
10
5
DB(|S(2,1)|)
DB(|S(1,1)|)
DB(|S(2,2)|)
Gain
N.F.
P1dB
IP3
dB
dB
16
1.0
dBm
dBm
dB
19.5
0
30
-5
-10
-15
-20
-25
-30
S11
S22
Vd
-6
dB
-26
5
V
Vg
V
-0.4 to -0.6
2
3
4
5
6
7
8
9
Frequency (GHz)
Id
mA
55
SCHEMATIC
MTEE
ID=TL21
W1=150 mil
W2=45 mil
W3=45 mil
MTEE
ID=TL22
W1=150 mil
W2=100 mil
W3=220 mil
MLIN
MLIN
ID =TL17
W=150 mil
L=120 mil
CAP
ID=TL19
W=100 mil
L=100 mil
ID=C4
C=33 pF
MTEE
ID=TL9
W1=70 mil
W2=40 mil
W3=40 mil
MTEE
MLIN
ID=TL3
W=40 mil
L=100 mil
MLIN
ID=TL10
W1=45 mil
W2=70 mil
W3=45 mil
ID=TL2
W=70 mil
L=420 mil
CAP
2
1
1
2
2
ID=C2
C=33 pF
3
3
PORT
1
SUBCKT
ID=Q1
NET="FET"
1
2
1
2
P=3
3
3
Z=50 Ohm
PORT
P=1
Z=50 Ohm
MLIN
MLEF
ID =TL16
W=5 mil
L=310 mil
ID=TL11
W=220 mil
L=380 mil
MRSTUB2
ID=TL20
Ri=20 mil
Ro=268 mil
Theta=90 Deg
MLEF
ID=TL1
W=40 mil
L=190 mil
RES
ID=R1
R=20 Ohm
MLIN
ID=TL6
W=45 mil
L=30 mil
CAP
ID=C5
C=33 pF
MLIN
ID=TL14
W=50 mil
L=100 mil
MLIN
MRSTUB2
ID=TL8
Ri=20 mil
Ro=350 mil
Theta=90 Deg
ID=TL5
W=5 mil
L=280 mil
MLIN
CAP
ID=TL15
W=50 mil
L=50 mil
ID=C7
C=1000000 pF
MLIN
CAP
ID=C1
C=33 pF
ID=TL4
W=50 mil
L=100 mil
DCVS
ID=VD
V=5 V
DCVS
ID=VG
V=-0.5 V
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
BOARD LAYOUT
Q1
33pF
33pF
Q1
20 Ohms
P1
P2
33pF
33pF
0.01uF
1.0uF
0.01uF
1.0uF
6
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
S-PARAMETERS BIASED @ 5V, 55mA:
FREQ[GHz]
S11m
S11a
S21m
S21a
S12m
S12a
S22m
S22a
0.500
0.750
1.000
1.250
1.500
1.750
2.000
2.250
2.500
2.750
3.000
3.250
3.500
3.750
4.000
4.250
4.500
4.750
5.000
5.250
5.500
5.750
6.000
6.250
6.500
6.750
7.000
7.250
7.500
7.750
8.000
8.250
8.500
8.750
9.000
9.250
9.500
9.750
10.000
10.250
10.500
10.750
11.000
11.250
11.500
11.750
12.000
12.250
12.500
12.750
13.000
0.976
0.953
0.925
0.894
0.860
0.827
0.796
0.767
0.742
0.718
0.694
0.672
0.650
0.629
0.614
0.600
0.587
0.571
0.555
0.540
0.529
0.521
0.511
0.504
0.499
0.496
0.493
0.492
0.491
0.483
0.486
0.483
0.479
0.475
0.473
0.473
0.476
0.483
0.488
0.495
0.507
0.521
0.539
0.560
0.581
0.603
0.626
0.645
0.662
0.675
0.685
-20.9
-31.4
-41.3
-51.2
-60.7
-69.7
-78.2
-86.3
-93.6
-100.5
-106.8
-112.6
-117.8
-122.6
-127.3
-132.1
-136.8
-142.0
-147.0
-152.4
-158.0
-163.8
-170.2
-176.6
177.0
170.4
163.9
157.5
151.2
145.5
140.4
135.3
130.8
126.5
122.5
118.4
114.1
109.1
103.4
97.7
11.395
11.087
10.729
10.279
9.807
9.315
8.842
8.385
7.951
7.554
7.180
6.833
6.521
6.232
6.002
5.788
5.605
5.418
5.249
5.096
4.967
4.850
4.729
4.606
4.498
4.377
4.261
4.135
4.007
3.876
3.784
3.679
3.588
3.509
3.448
3.415
3.397
3.376
3.339
3.312
3.279
3.229
3.166
3.091
3.021
2.945
2.877
2.804
2.738
2.666
2.604
161.5
153.2
145.1
137.3
130.0
123.1
116.7
110.6
104.9
99.5
94.5
89.6
85.1
80.9
76.7
72.7
68.5
64.2
60.3
56.3
52.3
48.1
43.7
39.5
35.3
31.0
26.8
22.5
18.4
14.8
11.2
7.5
0.011
0.016
0.021
0.025
0.029
0.032
0.034
0.036
0.038
0.040
0.041
0.042
0.043
0.043
0.044
0.045
0.046
0.048
0.048
0.048
0.049
0.051
0.052
0.054
0.055
0.056
0.057
0.057
0.058
0.057
0.057
0.057
0.058
0.058
0.059
0.062
0.066
0.070
0.073
0.077
0.080
0.083
0.086
0.089
0.091
0.093
0.095
0.096
0.097
0.098
0.100
78.3
72.8
67.8
62.9
58.6
54.8
51.4
48.1
46.0
42.6
40.4
38.5
36.3
34.7
33.9
33.4
32.1
30.0
28.4
26.8
26.0
25.4
23.3
21.1
19.2
17.0
14.0
11.9
9.4
0.635
0.626
0.614
0.598
0.583
0.567
0.553
0.540
0.528
0.517
0.506
0.496
0.487
0.479
0.475
0.471
0.467
0.460
0.453
0.447
0.443
0.441
0.438
0.428
0.418
0.405
0.391
0.376
0.361
0.348
0.340
0.333
0.331
0.330
0.332
0.340
0.347
0.354
0.355
0.360
0.360
0.357
0.349
0.338
0.327
0.316
0.307
0.300
0.295
0.293
0.295
-11.5
-17.0
-22.2
-26.9
-30.9
-34.6
-37.9
-40.8
-43.6
-46.2
-48.9
-51.2
-53.5
-55.5
-57.7
-59.5
-62.3
-64.6
-66.4
-68.2
-70.0
-72.6
-76.0
-78.8
-81.2
-84.3
-87.6
-90.7
-93.6
-96.1
-99.1
-101.7
-104.6
-107.2
-109.6
-112.7
-116.0
-120.7
-124.8
-129.3
-134.3
-139.9
-145.6
-151.3
-157.2
-163.3
-169.6
-176.1
177.6
171.3
165.3
7.6
6.4
4.8
5.0
4.5
5.2
5.6
5.0
4.1
0.9
-2.4
-5.6
-9.1
-13.2
-17.3
-21.4
-25.9
-30.4
-35.0
-39.4
-43.7
-47.8
-51.9
-56.0
-60.1
-64.2
-68.2
3.1
0.9
-1.5
-3.5
-6.7
-10.1
-12.3
-15.6
-18.5
-21.4
-24.2
-26.8
-29.7
-32.5
91.7
85.7
79.8
74.3
69.2
64.8
60.8
57.1
53.7
50.5
47.6
7
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
S-PARAMETERS BIASED AT 5V, 55mA CONTINUED:
FREQ[GHz]
S11m
S11a
S21m
S21a
S12m
S12a
S22m
S22a
13.250
13.500
13.750
14.000
14.250
14.500
14.750
15.000
15.250
15.500
15.750
16.000
16.250
16.500
16.750
17.000
17.250
17.500
17.750
18.000
18.250
18.500
18.750
19.000
19.250
19.500
19.750
20.000
20.250
20.500
20.750
21.000
21.250
21.500
21.750
22.000
22.250
22.500
22.750
23.000
23.250
23.500
23.750
24.000
24.250
24.500
24.750
25.000
25.250
25.500
25.750
26.000
0.693
0.701
0.711
0.724
0.738
0.755
0.771
0.787
0.800
0.808
0.813
0.818
0.822
0.822
0.824
0.831
0.839
0.845
0.852
0.852
0.848
0.841
0.829
0.815
0.805
0.796
0.786
0.780
0.778
0.776
0.777
0.779
0.782
0.784
0.785
0.786
0.783
0.777
0.772
0.774
0.771
0.755
0.750
0.744
0.741
0.732
0.718
0.704
0.688
0.677
0.673
0.677
44.9
42.1
39.3
36.2
32.8
29.1
25.2
20.9
17.0
13.2
9.2
5.2
1.3
-2.4
-5.9
-9.6
-12.5
-15.3
-17.6
-19.5
-20.5
-20.9
-20.6
-20.5
-20.7
-21.6
-23.6
-26.8
-30.7
-35.6
-41.3
-46.8
-52.0
-56.4
-59.8
-62.1
-63.5
-65.4
-67.7
-70.1
-73.2
-76.1
-79.2
-81.7
-84.1
-86.5
-89.2
-90.9
-95.1
-99.6
-105.6
-111.1
2.545
2.488
2.434
2.392
2.347
2.307
2.262
2.225
2.184
2.144
2.110
2.067
2.024
1.973
1.915
1.855
1.788
1.721
1.663
1.603
1.553
1.508
1.473
1.440
1.415
1.398
1.389
1.382
1.375
1.369
1.356
1.333
1.309
1.279
1.241
1.195
1.162
1.124
1.098
1.073
1.054
1.043
1.028
1.025
1.027
1.031
1.047
1.061
1.074
1.080
1.086
1.065
-72.1
-76.1
-79.9
-83.8
-87.7
-91.8
-95.7
-99.7
0.101
0.102
0.103
0.106
0.107
0.107
0.109
0.109
0.110
0.112
0.112
0.112
0.113
0.112
0.111
0.108
0.108
0.106
0.105
0.103
0.102
0.102
0.100
0.102
0.102
0.102
0.104
0.106
0.107
0.109
0.109
0.109
0.110
0.108
0.109
0.110
0.108
0.108
0.108
0.108
0.109
0.112
0.110
0.112
0.116
0.120
0.127
0.132
0.135
0.143
0.146
0.148
-35.0
-37.8
-40.4
-43.3
-46.7
-48.9
-51.8
-55.1
-58.6
-61.9
-65.3
-68.4
-71.6
-75.7
-78.8
-83.5
-86.4
0.299
0.302
0.308
0.312
0.314
0.317
0.318
0.320
0.323
0.326
0.334
0.340
0.348
0.357
0.366
0.373
0.379
0.387
0.396
0.406
0.418
0.429
0.437
0.449
0.456
0.456
0.460
0.460
0.455
0.452
0.444
0.438
0.432
0.424
0.421
0.417
0.420
0.426
0.428
0.428
0.436
0.434
0.443
0.433
0.429
0.418
0.407
0.396
0.372
0.349
0.327
0.298
159.0
153.3
147.9
142.7
138.2
133.8
129.6
125.4
120.5
115.7
110.0
103.9
97.3
90.3
82.9
76.1
69.3
63.5
58.6
54.7
51.6
48.5
46.0
43.1
40.7
39.3
38.7
37.9
36.9
35.7
34.4
31.4
26.9
20.6
13.6
6.0
-1.5
-103.8
-107.9
-112.2
-116.6
-121.1
-125.6
-130.0
-134.4
-138.4
-142.1
-145.7
-148.6
-151.4
-154.2
-156.6
-159.3
-161.9
-164.8
-167.6
-171.2
-175.1
-179.4
175.9
171.2
166.1
161.1
156.3
152.0
147.9
144.2
140.5
137.2
133.8
130.5
127.1
123.5
120.0
116.1
112.0
107.3
102.3
97.0
-88.7
-92.6
-94.2
-96.3
-98.6
-100.6
-103.0
-105.7
-107.4
-110.4
-113.5
-118.2
-121.5
-126.2
-130.7
-135.0
-140.3
-144.2
-148.4
-152.0
-155.3
-159.3
-162.4
-164.5
-169.1
-171.7
-175.2
-178.7
178.5
174.2
170.0
165.2
159.3
154.0
147.8
-7.9
-12.7
-16.5
-19.5
-22.0
-25.3
-29.0
-33.5
-36.8
-41.2
-46.5
-50.7
-57.2
-64.2
-71.0
90.9
85.8
8
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
HANDLING PRECAUTIONS:
To avoid damage to
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
the
devices
care
should be exercised
FPD6836P70
Packaged pHEMT
during
Proper
handling.
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages of
storage, handling, assembly, and testing.
These devices should be treated as Class 0 (0-
250 V) as defined in JEDEC Standard No. 22-
A114-B (Human Body Model) and Class 0 (0-
250V) per JESD22-A115-A (Machine Model).
Further information on ESD control measures
can be found in MIL-STD-1686 and MIL-
HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters are available on request.
9
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
相关型号：
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