SI3442DVD87Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6;
| 型号： | SI3442DVD87Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2001
SI3442DV
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
4.1 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V
DS(ON) = 0.075 W @ VGS =2.7 V.
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications in
notebook computers, portable phones, PCMICA cards, and
other battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline surface
mount package.
R
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
4
3
2
5
6
1
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
SI3442DV
Drain-Source Voltage
20
V
V
A
VDSS
VGSS
ID
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
8
4.1
(Note 1a)
(Note 1a)
15
Maximum Power Dissipation
1.6
W
PD
(Note 1b)
(Note 1c)
1
0.8
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
R
JA
q
R
JC
q
© 2001Fairchild Semiconductor Corporation
SI3442DV Rev. A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
20
V
Zero Gate Voltage Drain Current
1
µA
µA
nA
nA
VDS = 16 V, VGS = 0 V
TJ = 55oC
10
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
0.4
0.3
0.7
0.5
1
V
VGS(th)
V
DS = VGS, ID = 250 µA
TJ = 125oC
TJ = 125oC
0.8
RDS(ON)
Static Drain-Source On-Resistance
VGS = 4.5 V, ID = 4.1 A
0.039
0.06
0.05
0.06
0.11
0.075
W
VGS = 2.7 V, ID = 3.6 A
VGS = 4.5 V, VDS = 5 V
VDS = 4.5 V, ID = 4.1 A
On-State Drain Current
15
A
S
ID(on)
gFS
Forward Transconductance
12
DYNAMIC CHARACTERISTICS
Input Capacitance
365
230
95
pF
pF
pF
Ciss
Coss
Crss
V
DS = 10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
9
25
28
8
17
45
50
15
14
ns
ns
tD(on)
tr
tD(off)
tf
V
DD = 5 V, ID = 1 A,
VGEN = 4.5 V, RGEN = 6 W
ns
ns
10
1
nC
nC
nC
Qg
Qgs
Qgd
VDS = 10 V,
ID = 4.1 A, VGS = 4.5 V
Gate-Source Charge
Gate-Drain Charge
3.3
SI3442DV Rev.A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Continuous Source Diode Current
1.3
1.2
A
V
Drain-Source Diode Forward Voltage
0.75
VSD
VGS = 0 V, IS = 1.3 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T - T
T - T
= I2 (t) ´ RDS(ON
J
A
J
A
( )
PD t =
=
(t)
)
T
J
D
R
R
+R (t)
qJ
A
q
q
CA
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 125oC/W when mounted on a 0.01 in2 pad of 2oz copper.
c. 156oC/W when mounted on a 0.003 in2 pad of 2oz copper.
1a
1c
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SI3442DV Rev.A
Typical Electrical Characteristics
15
2.5
2
V
= 4.5V
3.0V
2.7V
2.5V
GS
12
9
2.0V
VGS =2.0V
1.5
1
2.5V
2.7V
6
3.0V
3.5V
4.5V
12
1.5V
3
0.5
0
0
3
6
9
15
0
1
2
3
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
2.5
2
I
= 4.1A
V
= 4.5V
D
GS
V
= 4.5V
GS
T = 125°C
J
1.5
1
25°C
-55°C
12
0.5
0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
3
6
9
15
T , JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
15
12
9
1.3
1.2
1.1
1
25°C
V
=- 5V
DS
V
= V
GS
DS
T
= -55°C
J
125°C
I
= 250µA
D
0.9
0.8
0.7
0.6
0.5
6
3
0
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
J
Figure 6. Gate Threshold Variation
Figure 5. Transfer Characteristics.
with Temperature.
SI3442DV Rev.A
Typical Electrical Characteristics (continued)
1.12
10
5
V
=0V
I
= 250µA
GS
D
1.08
1.04
1
1
0.1
T = 125°C
J
25°C
-55°C
0.01
0.96
0.92
0.001
0.0001
-50
-25
0
J
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
5
1500
VDS = 5V
ID = 4.1A
15V
1000
600
10V
4
3
2
1
0
C
iss
300
200
C
oss
f = 1 MHz
VGS = 0V
C
rss
100
50
0.1
0
3
6
9
12
0.2
V
0.5
1
2
5
10
20
Q
, GATE CHARGE (nC)
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
ton
toff
VDD
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
V
OUT
VGS
10%
10%
RGEN
INVERTED
DUT
G
90%
V
50%
50%
IN
S
10%
PULSE WIDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
SI3442DV Rev.A
Typical Electrical and Thermal Characteristics (continued)
2
25
VDS = 5V
1a
20
1.5
T = -55°C
J
25°C
125°C
15
1b
1c
1
0.5
0
10
5
4.5"x5" FR-4 Board
TA
25o
Still Air
=
C
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
2
2oz COPPER MOUNTING PAD AREA (in
)
I
, DRAIN CURRENT (A)
D
Figure 14. SuperSOTTM-6 Maximum Steady-State
Figure 13. Transconductance Variation with
Power Dissipation versus Copper Mounting Pad
Area.
Drain Current and Temperature.
5
4.5
4
20
10
5
1a
2
1
3.5
1b
0.5
1c
VGS = 4.5V
0.2
0.1
3
4.5"x5" FR-4 Board
SINGLE PULSE
TA = 25 o
C
RJA = See Note 1c
q
Still Air
0.05
2.5
2
TA = 25°C
VGS= 4.5V
0.02
0.01
0
0.2
0.4
0.6
0.8
)
1
0.1
0.2
0.5
DS
1
2
5
10
20
40
2
2oz COPPER MOUNTING PAD AREA (in
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
Figure 16. Maximum Safe Operating Area.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
q
JA
q
R
0.2
0.1
0.2
0.1
= See Note 1c
JA
q
P(pk)
0.05
0.05
t1
0.02
0.01
t2
0.02
0.01
T
- T = P * R
(t)
J
A
JA
q
Single Pulse
Duty Cycle, D = t / t
2
1
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1, TIME (sec)
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
SI3442DV Rev.A
SuperSOTTM-6 Tape and Reel Data
SSOT-6 Packaging
Configuration:
Figure 1.0
Packaging Description:
Customize Label
SSOT-6 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside barcode
a Fairchild logo
a
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
Embossed
Carrier Tape
F63TNR
Label
631
631
631
631
631
SSOT-6 Packaging Information
Pin 1
Standard
Packaging Option
D87Z
(no flow c ode)
Packaging type
TNR
3,000
7" Dia
TNR
10,000
13"
SSOT-6 Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
184x187x47 343x343x64
9,000
0.0158
0.1440
30,000
0.0158
0.4700
343mm x 342mm x 64mm
Intermediate box for D87Z Option
F63TNR Label
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
F63TNR
Label
F63TNR Label sample
F63TNR
Label
LOT: CBVK741B019
FSID: FDC633N
QTY: 3000
SPEC:
184mm x 187mm x 47mm
Pizza Box for Standard Option
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
SSOT-6 Tape Leader and Trailer
N/F: F
(F63TNR)3
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Component s
Trailer Tape
Leader Tape
300mm minimum or
75 empty poc kets
500mm minimum or
125 empty poc kets
August 1999, Rev. C
©2000 Fairchild Semiconductor International
SuperSOTTM-6 Tape and Reel Data, continued
SSOT-6 Embossed Carrier Tape
Configuration:
Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SSOT-6 Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
Diameter Option
7"
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
8mm
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
13" Dia
July 1999, Rev. C
SuperSOTTM-6 Package Dimensions
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
1. Life support devices or systems are devices or
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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