NZT605_07 [FAIRCHILD]
NPN Darlington Transistor; NPN达林顿晶体管
| 型号： | NZT605_07 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Darlington Transistor |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2007
NZT605
NPN Darlington Transistor
•
This device designed for applications requiring extremely high gain at collector
currents to 1.0A and high breakdown voltage.
•
Sourced from process 06.
4
3
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings *
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
110
Units
V
V
V
Collector-Emitter Voltage
V
V
CEO
CBO
EBO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
140
10
V
I
- Continuous
1.5
A
C
T , T
Operating and Storage Junction Temperature Range
-55 to +150
°C
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics *
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
= 10mA, I = 0
110
140
10
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
C
C
E
B
= 100µA, I = 0
E
= 100µA, I = 0
V
C
I
I
I
V
V
V
= 120V, I = 0
10
10
nA
nA
nA
CB
CE
EB
E
Collector Cutoff Current
= 120V, I = 0
E
CES
Emitter Cut-off Current
= 8.0V, I = 0
100
EBO
C
On Characteristics *
h
DC Current Gain
V
V
V
V
V
= 5.0V, I = 50mA
2000
5000
2000
300
FE
CE
CE
CE
CE
CE
C
= 5.0V, I = 500mA
C
= 5.0V, I = 1.0A
100K
C
= 5.0V, I = 1.5A
C
= 5.0V, I = 2.0A
200
C
V
Collector-Emitter Saturation Voltage
I
I
= 250mA, I = 0.25mA
1
1.5
V
CE(sat)
C
C
B
= 1.0A, I = 1.0mA
B
V
V
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= 1.0A, I = 1.0mA
1.8
1.7
V
V
BE(sat)
BE(on)
C
C
B
= 1.0A, V = 5.0V
CE
Small Signal characteristics
f
Transition Frequency
I
= 100mA, V = 10V, f = 20MHz
150
MHz
T
C
CE
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation
NZT605 Rev. C
1
www.fairchildsemi.com
Thermal Characteristics
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25°C
1,000
8.0
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
2
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
2
www.fairchildsemi.com
NZT605 Rev. C
Mechanical Dimensions
SOT-223
3.00 0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 0.25
0.70 0.10
(0.95)
°
~10
°
0
+0.10
–0.05
(0.95)
0.25
6.50 0.20
Dimensions in Millimeters
3
www.fairchildsemi.com
NZT605 Rev. C
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
4
www.fairchildsemi.com
NZT605 Rev. C
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