NZT651 [FAIRCHILD]
NPN Current Driver Transistor; NPN电流驱动晶体管
| 型号： | NZT651 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Current Driver Transistor |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
NZT651
C
E
C
B
SOT-223
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
60
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
4.0
A
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*NZT651
PD
Total Device Dissipation
1.2
9.7
W
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
103
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
NPN Current Driver Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 80 V, IE = 0
VEB = 4.0 V, IC = 0
60
80
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
V
100
0.1
nA
µA
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 50 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
75
75
75
40
Collector-Emitter Saturation Voltage
0.3
0.5
1.2
V
V
V
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VBE(sat)
VBE(on)
IC = 1.0 A, VCE = 2.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
75
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DC Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
200
3
2.5
2
β
VCE= 5V
= 10
125 °C
150
100
50
1.5
1
25 °C
25 °C
- 40 ºC
- 40 ºC
0.5
125 °C
0
0
0.01
0.01
0.1
1
10
0.1
1
10
I
C - COLLECTOR CURRENT (A)
I
C - COLLECTOR CURRENT (A)
NPN Current Driver Transistor
(continued)
DC Typical Characteristics (continued)
Base-Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1.4
1.2
1
1
- 40 ºC
0.8
25 °C
- 40 ºC
25 °C
0.6
0.4
0.2
125 °C
0.8
0.6
0.4
0.2
125 °C
VCE = 5V
β
= 10
0.01
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Collector-Cutoff Current
vs Ambient Temperature
100
VCB = 50V
10
1
0.1
0.01
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (ºC)
AC Typical Characteristics
Junction Capacitance vs.
Reverse Bias Voltage
NPN Current Driver Transistor
(continued)
AC Typical Characteristics (continued)
POWER DISSIPATION vs
AMBIENT TEMPERATURE
1.2
1
SOT-223
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TEMPERATURE ( oC)
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